LPE

作品数：102被引量：129H指数：6
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相关作者：李永良王占国莫要武陈建才李桂英更多>>
相关机构：中国科学院北京大学上海大学昆明物理研究所更多>>
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相关基金：国家自然科学基金国防基础科研计划国家科技重大专项国家重点基础研究发展计划更多>>
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Epitaxial Techniques for Compound Semiconductor Growth:from LPE to MOVPE
《Rare Metals》2000年第2期81-86,共6页李长荣 杜振民 罗德贵 张维敬 
ThisworkissupportedbyNationalAdvancedMaterialsCommitteeofChina .
The epitaxial techniques are the most important processes in the production of semiconductor materials and optoelectronic devices. Liquid phase epitaxy (LPE) and metal organic vapor phase epitaxy (MOVPE) particularly...
关键词：Ⅲ-Ⅴ semiconductors LPE MOVPE Thermodynamic analysis 
Preparation of LPE GaInAsSb Epilayers and Its Photodiodes for Detection of 1．8～2．1μm
《Rare Metals》1994年第1期26-30,共5页徐晨梅 彭瑞伍 韦光宇 吴伟 励翠云 
Growth of GaInAsSb epilayer by liquid phase epitaxy (LPE) was reported. The LPE system with a hor-izontal sliding graphite boat was employed. The Te-doped (100) GaSb wafer was chosen as substrate. Thephysical properti...
关键词：GAINASSB LPE Infrared detector p-n photodiode 
Inhomogeneity of Rare Earth Doped Ⅲ-Ⅴ Compounds Grown by LPE
《Rare Metals》1990年第2期145-149,共5页Yuan Yourong He Shengfu Zhu Youcai,Li Xiangwen Zhao Yu Du Shuqin Shi Yihe Liu Guoyuan Li Yunyi Zhou Ji Changchun Institute of Physics,Academia Sinica 130021 China General Research Institute for Non-ferrous Metals,Beijing 100088 Department of Chemistry, Peking University 
The processing of InP, GaAs and related compounds doped with rare earth metals, such as Er, Nd and Gd, grown by LPE is described. The inhomogeneity of rare earth heavily doped epi-layers is studied by SIMS, SEM and X-...
关键词：GAAS Inhomogeneity of Rare Earth Doped Compounds Grown by LPE 
LPE Growth of InAsPSb on InAs:Melt Composition,Lattice Mismatch and Surface Morphology被引量：2
《Rare Metals》1990年第1期46-51,共6页Zhang, Yonggang  Zhou, Ping  Chen, Huiying  Pan, Huizhen 
This project is supported by NSFC No.9687006.
The LPE growth of quaternary InAs11-x-yPxSby with x = 0.2 and y = 0.09 on InAs substrate has been studied. This composition is very suitable for the laser and detector applications at about 2.5 μm. We show that in In...
关键词：Indiumarsenic Phosphorus Antimony Alloys Surface Properties Laser Pulses Applications Optical Fibers Optical Properties Optics Nonlinear Semiconducting Antimony Compounds Energy Gap 
Study on Relationship between InGaAsP/InP LPE Wafer Morphology,Interface Property and Device Characteristics
《Rare Metals》1989年第2期43-48,共6页Li, Weidan  Fu, Xiaomei  Pan, Huizhen 
Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electron analysis, X-ray double-crystal diffraction, selective etching and surface morphology analysis. The relat...
关键词：Semiconducting Indium Compounds MORPHOLOGY Semiconductor Devices HETEROJUNCTIONS Semiconductor Diodes  Light Emitting MANUFACTURE Spectroscopy  Auger Electron Applications Transistors  Photosensitive MANUFACTURE 
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