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作品数：475被引量：413H指数：10
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A 2.5 GS/s 14-bit D/A converter with 8 to 1 MUX被引量：1
《Journal of Semiconductors》2016年第3期95-102,共8页张俊安 李广军 张瑞涛 付东兵 李皎雪 魏亚峰 阎波 刘军 李儒章 
Project supported by the National Natural Science Foundation of China(Nos.61006027,61176030);the Research Foundation of Key Laboratory of Analog Integrated Circuit(Nos.9140C0902120C09034,9140c090204130c09042);the Fundamental Research Funds for the Central Universities of China(No.ZYGX2012J003)
A 2.5 GS/s 14-bit D/A converter（DAC） with 8 to 1 MUX is presented. This 14-bit DAC uses a ＂5＋9＂segment PMOS current-steering architecture. A bias circuit which ensures the PMOS current source obtains a larger out...
关键词：PMOS current-steering D/A converter bias circuit high speed MUX dynamic element match（DEM） 
Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell被引量：2
《Journal of Semiconductors》2016年第1期51-55,共5页王海啸 郑新和 甘兴源 王乃明 杨辉 
supported by the National Natural Science Foundation of China(No.61274134);the International Cooperation Program of Suzhou;China(No.SH201215)
A reasonably-thick GaNAs/GalnAs superlattice could be an option as a roughly 1 eV subcell to achieve high-effiCiency multi-junction solar cells on a lattice-matched Ge substrate. A detailed consideration of a high- ef...
关键词：SUPERLATTICE theoretical designing solar cell current match 
AlGaAs/GaAs tunnel junctions in a 4-J tandem solar cell
《Journal of Semiconductors》2011年第11期14-17,共4页吕思宇 屈晓声 
supported by the National Natural Science Foundation of China(No.10778723)
The Ⅲ-Ⅴ compound tandem solar cell is a third-generation new style solar cell with ultra-high efficiency. The energy band gaps of the sub-cells in a GaInP/GaAs/InGaAs/Ge 4-J tandem solar cell are 1.8, 1.4, 1.0 and ...
关键词：Ⅲ-Ⅴ compound tandem solar cell tunnel junction current match energy conversion efficiency 
A bootstrapped switch employing a new clock feed-through compensation technique
《Journal of Semiconductors》2009年第12期93-102,共10页吴笑峰 刘红侠 苏立 郝跃 李迪 胡仕刚 
supported by the National Natural Science Foundation of China(No.60206006);the New Century Excellent Talents of Ministry of Education of China(No.NCET-05-0851);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China Program(No.708083);the Applied Materials Innovation Fund(No.XA-AM-200701)
Nonlinearity caused by the clock feed-through of a bootstrapped switch and its compensation techniques are analyzed. All kinds of clock feed-through compensation configurations and their drawbacks are also investigate...
关键词：bootstrapped switch clock feed-through compensation delay path match 
An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network
《Journal of Semiconductors》2008年第8期1445-1448,共4页曾轩 陈晓娟 刘果果 袁婷婷 陈中子 张辉 王亮 李诚瞻 庞磊 刘新宇 刘键 
8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of ...
关键词：AlGaN/GaN HEMTs internally match power combining power amplifier 
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