MBE

作品数：367被引量：417H指数：8
导出分析报告
相关领域：电子电信更多>>
相关作者：曾一平丁召孔梅影何力李晋闽更多>>
相关机构：中国科学院贵州大学清华大学华北光电技术研究所更多>>
相关期刊：更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划博士科研启动基金贵州省科学技术基金更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 期刊=Chinese Physics Lettersx
共 条 记 录，以下是1-7
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
MBE Growth and Characterization of Strained Hg Te(111)Films on CdTe/GaAs
《Chinese Physics Letters》2020年第3期64-68,共5页Jian Zliang Shengxi Zhang Xiaofang Qiu Yan Wu Qiang Sun Jin Zou Tianxin Li Pingping Chen 
Supported by the National Natural Science Foundation of China(Grant Nos.11634009,61874069,1177041280 and 11574336);Shanghai Science and Technology Foundation(Grant No.18JC1420401)。
Strained Hg Te thin films are typical three-dimensional topological insulator materials.Most works have focused on Hg Te(100)films due to the topological properties resulting from uniaxial strain.In this study,straine...
关键词：MBE FILMS INSULATOR 
Growth and Characterization of InSb Thin Films on GaAs(001) without Any Buffer Layers by MBE
《Chinese Physics Letters》2017年第7期177-181,共5页赵晓蒙 张杨 崔利杰 关敏 王保强 朱战平 曾一平 
Supported by the Youth Innovation Promotion Association of Chinese Academy of Sciences under Grant No 2015094;the National Natural Science Foundation of China under Grant Nos 61204012,61274049 and 61376058;the Beijing Natural Science Foundation under Grant Nos 4142053 and 4132070;the Beijing Nova Program under Grant Nos 2010B056 and xxhz201503
We report the growth of InSb layers directly on GaAs （001） substrates without any buffer layers by molecular beam epitaxy （MBE）. Influences of growth temperature and V/Ⅲ flux ratios on the crystal quality, the su...
关键词：Growth and Characterization of InSb Thin Films on GaAs MBE 
Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra被引量：1
《Chinese Physics Letters》2009年第4期229-232,共4页越方禹 陈路 吴俊 胡志高 李亚巍 杨平雄 褚君浩 
Supported by the National Basic Research Program of China under Grant 2007CB924901, Shanghai Leading Academic Dis- cipline Project （B411）, the National Natural Science Foundation of China under Grant No 60677022, and Shanghai Municipal Commission of Science and Technology Project under Grant Nos 07DZ22943 and 08JC1409000.
Modulated photoluminescence spectra have been performed to investigate the impurity activation in MBE-grown As-doped Hg1-xCdxTe （x ≈ 0.3）. The results show that the doped As mainly acting as donors in the as-grown ...
关键词：gamma-ray bursts GAMMA-RAYS RELATIVITY 
Growth Model for Pulsed-Laser Deposited Perovskite Oxide Films
《Chinese Physics Letters》2008年第2期663-666,共4页王旭 费义艳 朱湘东 吕惠宾 杨国祯 
We present a multi-level growth model that yields some of the key features of perovskite oxide film growth as observed in the reflection high energy electron diffraction （RHEED） and ellipsometry studies. The model d...
关键词：VAPOR-PHASE EPITAXY BY-LAYER GROWTH INTENSITY OSCILLATIONS DIFFRACTION SURFACES GAAS REFLECTION DYNAMICS MBE 
Continuous Wave Performance and Tunability of MBE Grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers被引量：13
《Chinese Physics Letters》2006年第8期2262-2265,共4页张永刚 郑燕兰 林春 李爱珍 刘盛 
Supported by the National High Technology Research and Development Programme of China under Grant No 2002AA313040 and the National Natural Science Foundation of China under Grant No 60136010.
InCaAsSb/AlGaAsSb multi quantum well ridge waveguide lasers at 2.1 μm wavelength are fabricated by using molecular beam epitaxy. Continuous wave performance and tunability of the lasers are evaluated in a wide temper...
REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING
《Chinese Physics Letters》1989年第10期451-454,共4页XIAO Guangming YIN Shiduan ZHANG Jingping FAN Tiwen LIU Jiarui DING Aiju ZHOU Junming ZHU Peiruan 
4.2MeV ^(7)Li channeling technique,laser Raman scattering spectrometry,and TEM have been utilized to study the regrowth of MBE-GaAs films of〜μm thick on Si substrates by Si^(+) implantation(0.6-2.6MeV)and subsequent ...
关键词：IMPLANTATION RATE utilized 
THE BEHAVIOUR OF Si IN Al_(x)Ga_(1-x)As GROWN BY MBE
《Chinese Physics Letters》1985年第6期277-280,共4页ZHOU Jun-ming HUANG-Yi YANG Zhong-xing CHENG Wen-qin 
With the use of RHEED,a new surface reconstruction Al_(x)Ga_(1-x)As(001)-(3 x 2)induced by Si dopant,and a Si dopant effect for suppressing island growth and promoting layer by layer growth are observed.
关键词：AS DOPANT 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部