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MEMORY: 作品数：1598被引量：1522H指数：14; 导出分析报告; 相关领域：自动化与计算机技术更多>>; 相关作者：张春才许硕贵齐煜王秋根康庆林更多>>; 相关机构：中国科学院国防科学技术大学东南大学复旦大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

In-Memory Probabilistic Computing Using Gate-Tunable Layer Pseudospins in van der Waals Heterostructures: 《Chinese Physics Letters》2025年第4期9-22,共14页Jiao Xie Jun-Lin Xiong Bin Cheng Shi-Jun Liang Feng Miao; supported by the National Natural Science Foundation of China(Grant Nos.12322407,62122036,and 62034004);the Natural Science Foundation of Jiangsu Province(Grant No.BK20233001);the National Key R&D Program of China(Grant Nos.2023YFF0718400 and 2023YFF1203600);the Leading-edge Technology Program of Jiangsu Natural Science Foundation(Grant No.BK20232004);the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB44000000);Innovation Program for Quantum Science and Technology;support from the Fundamental Research Funds for the Central Universities(Grant Nos.020414380227,020414380240,and 020414380242);the e-Science Center of Collaborative Innovation Center of Advanced Microstructures。; Layer pseudospins,exhibiting quantum coherence and precise multistate controllability,present significant potential for the advancement of future computing technologies.In this work,we propose an in-memory probabilist...; 关键词：layer pseudospinsexhibiting layered materialsby real spins probabilistic computing advancement future computing technologiesin electrical manipulation layer pseudospins memory computing gate tunable layer pseudospins

All electrical switching of 2D multiferroic heterostructure: 《Science China Materials》2025年第4期1303-1304,共2页Kian Ping Loh; The emergence of generative artificial intelligence (AI) has catalyzed a new wave of intelligence development, resulting in significant growth in computing capabilities and intensifying competition for advanced comput...; 关键词：advanced computational power electrical switching memory computing intelligence development d multiferroic heterostructure high speed generative artificial intelligence magnetic random access memory

Optimizing hardware-software co-design based on non-ideality in memristor crossbars for in-memory computing: 《Science China(Information Sciences)》2025年第2期350-365,共16页Pinfeng JIANG Danzhe SONG Menghua HUANG Fan YANG Letian WANG Pan LIU Xiangshui MIAO Xingsheng WANG; supported in part by National Natural Science Foundation of China(Grant Nos.U2341221,62274070);Hubei Province Science and Technology Major Project(Grant No.2022AEA001);Interdisciplinary Research Program of Huazhong University of Science and Technology(Grant No.2023JCYJ042);Hubei Key Laboratory of Advanced Memories。; The memristor crossbar,with its exceptionally high storage density and parallelism,enables efficient vector matrix multiplication(VMM),significantly improving data throughput and computational efficiency.However,its a...; 关键词：memristor crossbar IR-drop neural network activation function hardware-software co-design

Nano device fabrication for in-memory and in-sensor reservoir computing: 《International Journal of Extreme Manufacturing》2025年第1期46-71,共26页Yinan Lin Xi Chen Qianyu Zhang Junqi You Renjing Xu Zhongrui Wang Linfeng Sun; supported by National Key Research and Development Program of China(Grant No.2022YFA1405600);Beijing Natural Science Foundation(Grant No.Z210006);National Natural Science Foundation of China—Young Scientists Fund(Grant No.12104051,62122004);Hong Kong Research Grant Council(Grant Nos.27206321,17205922,17212923 and C1009-22GF);Shenzhen Science and Technology Innovation Commission(SGDX20220530111405040);partially supported by ACCESS—AI Chip Center for Emerging Smart Systems,sponsored by Innovation and Technology Fund(ITF),Hong Kong SAR。; Recurrent neural networks(RNNs)have proven to be indispensable for processing sequential and temporal data,with extensive applications in language modeling,text generation,machine translation,and time-series forecasti...; 关键词：reservoir computing memristive device fabrication compute-in-memory in-sensor computing

New‑Generation Ferroelectric AlScN Materials: 《Nano-Micro Letters》2024年第11期88-118,共31页Yalong Zhang Qiuxiang Zhu Bobo Tian Chungang Duan; fundings of National Natural Science Foundation of China(No.T2222025,62174053 and 61804055);National Key Research and Development program of China(No.2021YFA1200700);Shanghai Science and Technology Innovation Action Plan(No.21JC1402000 and 21520714100);the Fundamental Research Funds for the Central Universities.; Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner.However,complementary metal oxide semiconductor compatibi...; 关键词：AlScN FERROELECTRICS Nonvolatile memory In-memory computing

SSA-over-array(SSoA):A stacked DRAM architecture for nearmemory computing: 《Journal of Semiconductors》2024年第10期42-53,共12页Xiping Jiang Fujun Bai Song Wang Yixin Guo Fengguo Zuo Wenwu Xiao Yubing Wang Jianguo Yang Ming Liu; supported in part by the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000。; Aiming to enhance the bandwidth in near-memory computing,this paper proposes a SSA-over-array(SSoA)architecture.By relocating the secondary sense amplifier(SSA)from dynamic random access memory(DRAM)to the logic die a...; 关键词：near-memory vertical stacking SSA bandwidth density

Ferroelectric materials for neuroinspired computing applications: 《Fundamental Research》2024年第5期1272-1291,共20页Dong Wang Shenglan Hao Brahim Dkhil Bobo Tian Chungang Duan; supported by National Key Research and Development Program of China(2021YFA1200700);The National Natural Science Foundation of China(T2222025 and 62174053);Open Research Projects of Zhejiang Lab(2021MD0AB03);Shanghai Science and Technology Innovation Action Plan(21JC1402000 and 21520714100);the Fundamental Research Funds for the Central Universities。; In recent years,the emergence of numerous applications of artificial intelligence(AI)has sparked a new technological revolution.These applications include facial recognition,autonomous driving,intelligent robotics,and...; 关键词：Ferroelectric materials Ferroelectric synaptic devices Artificial neural network In-memory computing In-sensor computing

A Fully-Integrated Memristor Chip for Edge Learning被引量：1: 《Nano-Micro Letters》2024年第9期123-127,共5页Yanhong Zhang Liang Chu Wenjun Li; funding support from the National Natural Science Foundation of China(52172205).; It is still challenging to fully integrate computing in memory chip as edge learning devices.In recent work published on Science,a fully-integrated chip based on neuromorphic memristors was developed for edge learning...; 关键词：Computing in memory Edge learning Fully-integrated chip

Recent Advances in In-Memory Computing:Exploring Memristor and Memtransistor Arrays with 2D Materials被引量：3: 《Nano-Micro Letters》2024年第7期1-30,共30页Hangbo Zhou Sifan Li Kah-Wee Ang Yong-Wei Zhang; This work was supported by the National Research Foundation,Singapore under Award No.NRF-CRP24-2020-0002.; The conventional computing architecture faces substantial chal-lenges,including high latency and energy consumption between memory and processing units.In response,in-memory computing has emerged as a promising altern...; 关键词：2D materials MEMRISTORS Memtransistors Crossbar array In-memory computing

垂直排列的六方氮化硼基忆阻器中的突触可塑性: 《Science China Materials》2024年第6期1907-1914,共8页张海忠巨鑫江海涛杨丹魏榕山胡炜卢孝强朱敏敏; supported by the Science and Technology Major Project of Fujian Province,China (2022HZ027006);Fujian Provincial Science and Technology Planning Project (2022I0006);Quanzhou Municipal Science and Technology Major Project,China (2022GZ7);the National Natural Science Foundation of China (62274036)。; 下一代计算系统需要实现每秒1018次浮点运算以解决感知终端数据呈指数增长的问题,这是由人工智能和物联网的进步驱动的.即使超级计算机具备执行这些操作的能力,但当电子突触阵列达到与人类神经网络相当规模时,管理热耗散就成为一个重要...; 关键词：boron nitride vertically-aligned high thermal con-ductivity low-power memory neuromorphic computing

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