大尺寸化学Ni源金属诱导晶化多晶硅的研究  

Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source

作　　者：赵淑云[1] 吴春亚[1] 刘召军[1] 李学冬[1] 王中[1] 孟志国[1] 熊绍珍[1] 张芳[2] 

机构地区：[1]南开大学光电子所 [2]科技部高技术研究发展中心,北京100044

出　　处：《物理学报》2006年第11期6095-6100,共6页Acta Physica Sinica

基　　金：国家高技术研究发展计划(863)(批准号:2004AA303570);国家自然科学基金重点项目(批准号:60437030);天津市自然科学基金(批准号:05YFJMJC01400);国家出国留学人员回国基金资助的课题.~~

摘　　要：用无电电镀的化学方法,在VHF-PECVD沉积获得的非晶硅薄膜表面形成镍诱导源,在550℃下退火若干小时,可以诱导产生微米量级的多晶硅晶粒.用此法形成的镍源可以均匀地分布在非晶硅薄膜的表面.非晶硅薄膜上形成晶核的数量取决于镍溶液的浓度、pH值和无电电镀的时间等参量.当成核密度比较低时可以观察到径向晶化现象.用VHF-PECVD非晶硅薄膜作为晶化前驱物,晶化后多晶硅的最大晶粒尺寸可达到90μm.用此多晶硅试制的TFT,获得了良好的器件特性.Nonv-electrical plating was employed to form nickel inducing source on the surface of α-Si thin film deposited by VHF- PECVD. It was observed that the nickel inducing source formed by this method appeared as ＂dots＂ uniformly distributed on the surface of a-Si thin film after annealed for several hours at 550℃. The quantity of ＂dot＂ on the a-Si was determined by Ni concentration in the solution, the PH value, and the plating times, etc. The lateral crystallization was observed if the density of ＂dots＂ is relatively low. Poly-Si with maximum grain size of 90 μm was obtained from the original a-Si deposited by VHF- PECVD. High performance thin film transistor （TFT） monitors were fabricated using this poly-Si.

关 键 词：金属诱导晶化 化学源 多晶硅 薄膜晶体管 

分 类 号：O782[理学—晶体学]