Si衬底上5.1W/mm功率密度的GaN HEMT  

A 5.1W/mm Power Density GaN HEMT on Si Substrate

作　　者：冯志宏[1] 尹甲运[1] 袁凤坡[1] 刘波[1] 梁栋[1] 默江辉[1] 张志国[1] 王勇[1] 冯震[1] 李效白[1] 杨克武[1] 蔡树军[1] 

机构地区：[1]专用集成电路国家级重点实验室,石家庄050051

出　　处：《Journal of Semiconductors》2007年第12期1949-1951,共3页半导体学报（英文版）

摘　　要：利用MOCVD技术在Si(111)衬底上生长了高质量的GaNHEMT材料.1μm厚GaN外延层XRD(002)摇摆曲线半高宽573″,(102)摇摆曲线半高宽668″.通过插入层技术实现2μm厚GaNHEMT材料无裂纹,室温二维电子气迁移率1350cm2/(V.s),方块电阻328Ω/□.1mm栅宽GaN微波功率器件饱和电流大于0.8A/mm,跨导大于250mS/mm,2GHz下最大连续波输出功率5.1W,增益9.1dB,附加效率达到35%.High quality GaN HEMT materials were grown on Si （111） substrates by MOCVD. The FWHM of the XRD （002） rocking curve of the lmm-thick GaN epilayer is 578＂,and the （102） is 668＂. 2μm-thick crack-free GaN HEMT materials were achieved by the interlayer technique. The RT 2DEG mobility is 1850cm^2/（V.s） with a sheet resistance of 328Ω/□. The DC and RF characteristics of a GaN microwave power device with a lmm gate width were probed. The saturated drain current density is around 0.8A/mm,and the peak transconductance is beyond 250mS/mm. Tuning for a maximum output power of 5.1W at 2GHz,a gain of 9.1dB,and a peak power-added efficiency of 35% was obtained.

关 键 词：SI衬底 GAN HEMT XRD半高宽 二维电子气迁移率 功率密度 

分 类 号：TN32[电子电信—物理电子学]