0.1-0.3μm X射线光刻技术在GaAs器件制作中的应用  

Application of 0.1～0.3μm X－ray lithography in GaAs PHEMT device

作　　者：叶甜春[1] 谢常青[1] 李兵[1] 陈大鹏[1] 陈朝晖[1] 赵玲莉[1] 胥兴才[1] 刘训春[1] 张绵[2] 赵静[2] 

机构地区：[1]中国科学院微电子中心,北京100010 [2]信息产业部电子13所,石家庄050051

出　　处：《功能材料与器件学报》2000年第3期182-185,共4页Journal of Functional Materials and Devices

摘　　要：对同步辐射X射线光刻及在GaAsPHEMT器件制作中的应用进行了研究,并制作出栅长0.15μm的AlGaAs/InGaAs/GaAsPHEMT晶体管。研究结果表明,X射线光刻在剥离图形及T型栅结构制作工艺中具有极好的光刻图形质量，在混合光刻工艺中，抑止GaAs合金点的形成是取得良好对准标记的关键。X－ ray lithography and its application in GaAs device fabricating have been studied in this paper. The GaAs PHEMT device was fabricated with mix－ and－ match lithography process, in which the gate lift－ off structure was patterned by X－ ray lithography and the others by optical lithography. An Au/Cr/SiNX mask system was used in synchrotron radiation lithography. A novel ohmic contact matellization system, In/AuGeNi/Ag/Au, was used to get good topography on GaAs substrate to satisfy the requirement of X－ ray lithography on the aligning mark. A self－ aligning exposure process was carried out to get T－ shaped patterns which were widely used in GaAs PHEMT fabricating. The AlGaAs/InGaAs/GaAs PHEMT transistor with 0.15 μ m gate length was fabricated by X－ ray lithography with mix－ and－ match process.

关 键 词：X射线光刻 PHEMT T型栅 GaAs器件制作 

分 类 号：TN325.3[电子电信—物理电子学] TN305.7