总剂量加固对SOINMOS器件抗辐射特性的影响  

Effect of Ion Implantation for Total Dose Irradiation on Performance of SOI NMOS Devices

作　　者：陈海波[1] 吴建伟 李艳艳[1] 谢儒彬[1] 朱少立[1] 顾祥[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2014年第12期33-36,共4页Electronics & Packaging

摘　　要：采用埋层改性工艺对部分耗尽SOI NMOS器件进行总剂量加固,通过测试器件在辐射前后的电学性能研究加固对SOI NMOS器件抗辐射特性的影响。加固在埋氧层中引入电子陷阱,辐射前在正负背栅压扫描时,电子陷阱可以释放和俘获电子,导致背栅阈值电压产生漂移,漂移大小与引入电子陷阱的量有关。通过加固可以有效提高器件的抗总剂量辐射特性,电子陷阱的量对器件的抗辐射性能具有显著影响。PD SOI NMOSFET was hardened for total dose irradiation by changing the performance of buried oxides, and effects were studied through measuring their electrical performance before and after radiation. It was found that the hardening process introduced electron trap, which induced the drifting of back gate threshold value under positive and negative electric field, the drifting was related to the amount of electron traps. The hardening process made the devices more tolerant to total dose radiation, and the amount of electron traps had significant influence on the irradiation performance of the devices.

关 键 词：离子注入 SOI NMOSFET 总剂量辐射 

分 类 号：TN306[电子电信—物理电子学]