β-Ga_2O_3(100)面的CMP研究及优化  

Investigation and Optimization of the CMP of the β-Ga_2O_3(100)Face

作　　者：徐世海[1] 李晖[1] 高飞[1] 练小正[1] 朱磊[1] 陈阳[1] 

机构地区：[1]中国电子科技集团公司第46研究所,天津300220

出　　处：《微纳电子技术》2017年第3期208-212,共5页Micronanoelectronic Technology

摘　　要：主要研究了Czochralski法生长的β-Ga_2O_3单晶片的化学机械抛光(CMP)。采用酸性硅溶胶溶液作为抛光液,对经过切割、机械抛光后的10 mm×10 mmβ-Ga_2O_3单晶片进行了CMP实验。通过金相显微镜观察到4 h的抛光过程中,单晶片表面逐渐平坦化,经原子力显微镜(AFM)测试,单晶片的表面粗糙度达到了0.174 nm。在采用AxDyOz和LClk的混合酸性溶液对β-Ga_2O_3单晶片进行抛光后,获得了更好的晶片表面状态和去除速率。通过实验得出,在采用酸性硅溶胶溶液对β-Ga_2O_3单晶片进行CMP时,单晶片表面被酸性溶液腐蚀,然后通过SiO_2粒子的磨削作用使表面达到平坦化。而优化实验中,采用AxDyOz和LClk混合酸性溶液中原位产生的DlOm粒子作为磨粒,抛光效果更佳。The chemical mechanical polishing（CMP）ofβ-Ga2O3 single crystal wafers grown by Czochralski method was studied.Using theβ-Ga2O3 single crystal wafer with the dimension of10 mm×10 mm after incising and mechanical polishing procedures,the CMP experiment was carried out with the acidic silica sol solution as polishing solution.The surface of the single crystal wafer becomes flatter gradually during the 4 h polishing process observed by the metallographic microscope,and its surface roughness reaches 0.174 nm measured by the atomic force microscope（AFM）.Through the polishing of theβ-Ga2O3 single crystal wafer with the mixed acidic solution of AxDyOzand LClk,the better surface state and removal rate were obtained.The experiment results show that the surface of theβ-Ga2O3 single crystal wafer is eroded by acidic silica sol solution during the CMP process,and the surface planarization is achieved by the grinding effect of SiO2 particles.Furthermore,the optimization experiment result shows that using in-situ abrasive DlOm particles produced in the mixed acidic solution of AxDyOzand LClk,the polishing effect is better.

关 键 词：氧化镓 化学机械抛光(CMP) 抛光液 平坦化 硅溶胶 

分 类 号：TN305.2[电子电信—物理电子学]