一种新的GaAs PHEMT器件可靠性评估方法研究  

A new method to evaluate reliability in GaAs PHEMT's

作　　者：刘红侠[1] 郑雪峰[1] 韩晓亮[1] 郝跃[1] 张绵[2] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071 [2]信息产业部十三所,石家庄050002

出　　处：《物理学报》2003年第10期2576-2579,共4页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :6 0 2 0 6 0 0 6 );国防预研基金 (批准号 :0 0J8.4 .3DZ0 1)资助的课题~~

摘　　要：通过研究应力前后GaAsPHEMT器件电特性的测量 ,分析了GaAsPHEMT退化的原因 ,从实验中得出高场下碰撞电离的电离率与器件沟道电场峰值的关系曲线 .对高场下碰撞电离率的实验曲线进行拟合 ,可以得到碰撞电离率与器件沟道电场峰值的量化关系 ,由此可以对GaAsPHEMT器件的电性能和可靠性进行改善和评估 .进一步改进GaAsPHEMT的击穿电压 。This paper analyzes the degradation in GaAs pseudomorphic high electron mobitity transistors (PHEMT's) by measuring the electric characteristics in GaAs PHEMT's before and after stress. The relation between impact ionization rate and maximum channel electric field is gained. An analytical expression of impact ionization rate versus maximum channel electric field is deduced by fitting the experimental results. The electric characteristic and reliability in GaAs PHEMT's can be improved and evaluated using the analytical expression. The impact. ionization in channel should be decreased in order to improve the breakdown voltage in GaAs PHEMT's.

关 键 词：高电子迁移率晶体管 PHEMT器件 可靠性评估 碰撞电离率 GAAS 退化 沟道电场峰值 砷化镓晶体管 

分 类 号：TN304.2[电子电信—物理电子学]