国家自然科学基金(60876086)

作品数：9被引量：7H指数：1
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相关作者：吴巨金鹏王宝强王占国曾一平更多>>
相关机构：中国科学院更多>>
相关期刊：《Chinese Physics B》《微纳电子技术》更多>>
相关主题：QUANTUM-DOT量子点QUANTUM_DOTINAS/GAASBRO更多>>
相关领域：电子电信理学更多>>
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A mode-locked external-cavity quantum-dot laser with a variable repetition rate
《Chinese Physics B》2013年第10期305-309,共5页吴剑 金鹏 李新坤 魏恒 吴艳华 王飞飞 陈红梅 吴巨 王占国 
Project supported by the National Natural Science Foundation of China(Grant Nos.61274072,60976057,and 60876086)
A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity le...
关键词：quantum dot mode-locked laser external cavity 
A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range
《Chinese Physics B》2013年第9期446-449,共4页魏恒 金鹏 罗帅 季海铭 杨涛 李新坤 吴剑 安琪 吴艳华 陈红梅 王飞飞 吴巨 王占国 
supported by the National Natural Science Foundation of China (Grant Nos. 61274072, 60976057, 61176047, and 60876086)
The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the inj...
关键词：quantum dot external cavity tunable laser 
InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration被引量：2
《Chinese Physics B》2013年第4期523-526,共4页李新坤 金鹏 梁德春 吴巨 王占国 
Project supported by the National Basic Research Program of China (Grant No. 2006CB604904);the National Natural Science Foundation of China (Grant Nos. 60976057, 61274072, and 60876086)
With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer co...
关键词：quantum dot SUBMONOLAYER self-assembled superluminescent diode 
量子点外延生长新模型(续)(英文)
《微纳电子技术》2012年第4期213-221,共9页吴巨 
National Natural Science Foundation of China(60876086,60976057,60990315)
3.2 Wetting Layer Tailored by Epitaxial Stress Most epitaxial films wet the substrates to var-ying degrees in heteroepitaxy.In the paradigm systems of the QD epitaxial growth,In As/GaAs(001)and Ge/Si(001),the critical...
关键词：量子点 外延生长 EPITAXIAL WETTING INDIUM BONDS floating DIMER crystalline compressive 
量子点外延生长新模型(英文)被引量：1
《微纳电子技术》2012年第3期141-146,共6页吴巨 
National Natural Science Foundation of China(60876086,60976057,60990315)
目前在原子尺度上人们对量子点分子束外延生长过程了解很少,所有关于量子点外延生长的理论模型和计算机模拟都是建立在传统的外延生长理论框架内。在传统理论框架内,量子点的生长过程被理解为发生在生长表面上一系列的单一的原子事件,...
关键词：InAs/GaAs(001) 量子点 自组装 原子集体运动 外延生长 
Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes被引量：1
《Chinese Physics B》2011年第10期486-490,共5页梁德春 安琪 金鹏 李新坤 魏恒 吴巨 王占国 
supported by the National Basic Research Program of China (Grant No. 2006CB604904);the National Natural Science Foundation of China (Grant Nos. 60876086, 60976057, and 60776037)
This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAl- GaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full widt...
关键词：InAiGaAs quantum dot superluminescent diode optical coherence tomography shortwavelength 
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device被引量：1
《Chinese Physics B》2011年第6期247-251,共5页吴剑 吕雪芹 金鹏 孟宪权 王占国 
Project supported by the National Key Basic Research and Development Program of China (Grant No. 2006CB604904);the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, 60776037, and 10775106)
A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot （QD） superluminescent diode （SLD） as the gain device. The SLD device is processed with a be...
关键词：quantum dot external cavity laser broadband tuning 
薄膜和量子点的外延生长(英文)被引量：1
《微纳电子技术》2010年第6期321-329,共9页吴巨 金鹏 曾一平 王宝强 王占国 
National Natural Science Foundation of China (60676029,60876086);National Basic Research Program of China (973 Program) (2006CB604904,2006CB604908)
首先简短地综述了人们关于外延薄膜材料层状(layer-by-layer)生长机制的认识;给出了作者关于自组装量子点外延生长过程的评价和观点,强调了量子点自组装生长过程的复杂性和非线性性质。在对已经发表过的实验数据进一步分析的基础上,作...
关键词：外延生长 薄膜 自组装量子点 InAs/GaAs(001) 
A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission被引量：1
《Chinese Physics B》2010年第1期534-537,共4页吕雪芹 金鹏 王占国 
Project supported by the National Basic Research Program of China (Grant No. 2006CB604904);the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086 and 60776037)
A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot （QD） gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of...
关键词：QUANTUM-DOT tunable laser external cavity broadband tuning 
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