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国家自然科学基金(60876009): 作品数：17被引量：19H指数：2; 导出分析报告; 相关作者：冯志红王彩华齐海涛刘波毛陆虹更多>>; 相关机构：天津大学天津师范大学河北半导体研究所中国电子科技集团第十三研究所更多>>; 相关期刊：《功能材料》《天津师范大学学报（自然科学版）》《Chinese Physics B》《微纳电子技术》更多>>; 相关主题：INALNHIGH_ELECTRON_MOBILITY_TRANSISTORSALNTHRESHOLD_VOLTAGEGAN更多>>; 相关领域：电子电信理学更多>>

偏置应力对InAlN/GaN HEMT直流特性的影响: 《功能材料》2015年第1期1051-1054,1060,共5页王浩谢生冯志红刘波毛陆虹; 国家自然科学基金资助项目(60876009);天津市基础研究重点资助项目(09JCZDJC16600); 采用直流偏置应力法对蓝宝石衬底上的InAlN/GaN HEMT器件的电流崩塌效应进行了研究。实验结果表明,在关态和开态应力后,器件直流特性明显退化,退化程度随偏置应力电压和应力时间的累积而增大。理论分析和器件仿真结果表明,关态应力引起...; 关键词：高电子迁移率晶体管电流崩塌偏置应力铟铝氮氮化镓

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes: 《Chinese Physics B》2014年第2期421-425,共5页吕元杰冯志红林兆军顾国栋敦少博尹甲运韩婷婷蔡树军; Project supported by the National Natural Science Foundation of China (Grant Nos.60890192,60876009,and 11174182); Ni/Au Schottky contacts on A1N/GaN and A1GaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as...; 关键词：Al（Ga）N/GaN Schottky barrier height current-transport mechanism leakage current

Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes: 《Chinese Physics B》2014年第2期426-430,共5页吕元杰冯志红顾国栋敦少博尹甲运王元刚徐鹏韩婷婷宋旭波蔡树军栾崇彪林兆军; Project supported by the National Natural Science Foundation of China (Grant Nos.61306113,60876009,and 11174182); Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the polarization sheet charge density and relative permittivity a...; 关键词：Al（Ga）N/GaN STRAIN relative permittivity Schottky metal

Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode: 《Chinese Physics B》2013年第7期426-429,共4页吕元杰冯志红顾国栋敦少博尹甲运韩婷婷盛百城蔡树军刘波林兆军; the National Natural Science Foundation of China(Grant Nos.60890192,60876009,and 11174182);the Foundation of Key Laboratory,China; An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted fro...; 关键词：AlGaN/GaN heterostructure Schottky diode threshold voltage series resistance

Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition被引量：1: 《Chinese Physics B》2013年第5期449-452,共4页刘波张森尹甲运张雄文敦少博冯志红蔡树军; Project supported by the National Natural Science Foundation of China (Grant No. 60876009); The effect of an initially grown high-temperature A1N buffer （HT-A1N） layer＇s thickness on the quality of an A1N epilayer grown on sapphire substrate by metalorganic chemical vapor deposition （MOCVD） in a two-ste...; 关键词：AIN epilayer high-temperature （HT） buffer atomic force microscopy （AFM） DISLOCATION

An extrinsic f_(max)＞100 GHz InAlN/GaN HEMT with AlGaN back barrier: 《Journal of Semiconductors》2013年第4期46-49,共4页刘波冯志红敦少博张雄文顾国栋王元刚徐鹏何泽召蔡树军; Project supported by the National Natural Science Foundation of China(Nos.60890192,60876009); We report the DC and RF performance of InAlN/GaN high-electron mobility transistors with AlGaN back barrier grown on SiC substrates. These presented results confirm the high performance that is reachable by InAlN-base...; 关键词：AlGaN back barrier InA1N high-electron-mobility transistors power gain cutoff frequency

DC Characteristics of Lattice-Matched InAlN/AlN/GaN High Electron Mobility Transistors被引量：2: 《Transactions of Tianjin University》2013年第1期43-46,共4页谢生冯志红刘波敦少博毛陆虹张世林; Supported by National Natural Science Foundation of China(No.60876009);Natural Science Foundation of Tianjin(No.09JCZDJC16600); Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristic...; 关键词：indium aluminum nitride gallium nitride sapphire metallorganic chemical vapor deposition high electron mobility transistor DC characteristic thermal aging

1.0μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition被引量：1: 《Journal of Central South University》2012年第12期3444-3448,共5页高成李海鸥黄姣英刁胜龙; Project(Z132012A001)supported by the Technical Basis Research Program in Science and Industry Bureau of China;Project(61201028,60876009)supported by the National Natural Science Foundation of China; InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-D...; 关键词：metamorphic device mental organic chemical vapor deposition high electron mobility transistors InP substrate INGAAS

Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current: 《Journal of Semiconductors》2012年第6期28-30,共3页顾国栋蔡勇冯志红刘波曾春红于国浩董志华张宝顺; supported by the National Natural Science Foundation of China(Nos.10990102,60890192,60876009); We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～10^（17） A/mm at V_（GS）= 0 V and...; 关键词：enhancement-mode InAlN/GaN HEMT threshold voltage thermal oxidation gate leakage

Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors: 《Journal of Semiconductors》2012年第5期53-56,共4页房玉龙敦少博刘波尹甲运蔡树军冯志红; Project supported by the National Natural Science Foundation of China(Nos.60890192,60876009); Electrical stress experiments under different bias configurations for AlGaN/GaN high electron mobility transistors were performed and analyzed.The electric field applied was found to be the extrinsic cause for the dev...; 关键词：AlGaN/GaN HEMTs electrical degradation traps inverse piezoelectric effect

国家自然科学基金(60876009)