the National Natural Science Foundation of China(Grant Nos.11933006,61805060,and 61290304).
A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique.In this route,multiple ion implantation ...
Supported by Special Funds for Major State Basic Research under Project(2012CB619203,2013CB922301);National Natural Science Foundation of China(11174306,61290304);Innovation Program of Shanghai Institute of Technical Physics of the Chinese Academy of Sciences(Q-ZY-76)