国家自然科学基金(60806033)

作品数：8被引量：5H指数：1
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相关作者：黎明张兴黄如安霞林猛更多>>
相关机构：北京大学更多>>
相关期刊：《Chinese Physics B》《物理学报》《Science China(Information Sciences)》更多>>
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相关领域：电子电信理学自动化与计算机技术更多>>
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Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology被引量：1
《Science China(Information Sciences)》2018年第10期273-275,共3页Bingxin ZHANG Xia AN Pengqiang LIU Xiangyang HU Ming LI Xing ZHANG Ru HUANG 
supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 60806033, 61534004, 61474004);National Key Research and Development Plan (Grant No. 2016YFA0200504)
Dear editor,Ge has been considered as a very promisirtg can-didate as a channel material of MOSFET to ex-tend Moore＇s law beyond sub-7 nm node, due toits high and symmetric mobility, as well as thecompatibility with ...
关键词：Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology NPP Ni 
GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs被引量：1
《Science China(Information Sciences)》2018年第6期255-257,共3页Bingxin ZHANG Xia AN Xiangyang HU Ming LI Xing ZHANG Ru HUANG 
National Natural Science Foundation of China(Grant Nos.61421005,61534004,60806033,61474004);National High Technology Research and Development Program of China(Grant No.2015AA016501);National Key Research and Development Plan(Grant No.2016YFA0200504)
Dear editor,Ge is considered as a promising channel material to replace Si because of its high carrier mobility than Si and compatibility with conventional Si process[1–3].Strain engineering has been widely used in S...
关键词：GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSF HRTEM SPE 
高迁移率Ge沟道器件研究进展被引量：1
《物理学报》2015年第20期49-60,共12页安霞 黄如 李志强 云全新 林猛 郭岳 刘朋强 黎明 张兴 
国家重点基础研究发展计划(批准号:2011CBA00601);国家自然科学基金(批准号:61421005,61434007,60806033,61474004);国家科技重大专项(02专项)资助的课题~~
高迁移率Ge沟道器件由于其较高而且更对称的载流子迁移率,成为未来互补型金属-氧化物-半导体(CMOS)器件极有潜力的候选材料.然而,对于Ge基MOS器件,其栅、源漏方面面临的挑战严重影响了Ge基MOS器件性能的提升,尤其是Ge NMOS器件.本文重...
关键词：高迁移率沟道 栅工程 源漏工程 金属-氧化物-半导体 
Ge surface passivation by GeO_2 fabricated by N_2O plasma oxidation被引量：1
《Science China(Information Sciences)》2015年第4期139-143,共5页LIN Meng AN Xia LI Ming YUN QuanXin LI Min LI Zhi Qiang LIU PengQiang ZHANG Xing HUANG Ru 
supported in part by National Basic Research Program of China (973) (Grant No.2011CBA00601);National Natural Science Foundation of China (Grant Nos. 60625403, 60806033, 60925015);National Science & Technology Major Project 02 (Grant No. 2009ZX02035-001)
In this paper, Ge surface passivation by GeO2 grown by N2O plasma oxidation is presented and experimentally demonstrated. Results show that stoichiometrically GeO2 can be achieved by N2O plasma oxidation at 350℃. The...
关键词：Ge PASSIVATION GeO2 N2O plasma oxidation 
Fabricating GeO_2 passivation layer by N_2O plasma oxidation for Ge NMOSFETs application被引量：1
《Chinese Physics B》2014年第6期538-541,共4页林猛 安霞 黎明 云全新 李敏 李志强 刘朋强 张兴 黄如 
supported by the National Basic Research Program of China(Grant No.2011CBA00601);the National Natural Science Foundation of China(Grant Nos.60625403,60806033,and 60925015)
In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomica...
关键词：Ge GeO2 passivation N2O plasma oxidation Ge NMOSFETs 
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