supported in part by the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB12030400);the National Basic Research Program of China(2013CB933504);the National Natural Science Foundation of China(61221004);the Beijing Training Project for the Leading Talents in S&T(Z151100000315008);the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology,Institute of Microelectronics of Chinese Academy of Science,and Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM)
Organic thin-film transistor constructs the headstone of flexible electronic world such as conformable sensor arrays and flexible active-matrix displays. With solutionprocessed methods, it forges ahead toward large-ar...
Project supported by the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,the National High Technology Research and Development Program of China(Grant No.2014AA032901);the National Natural Science Foundation of China(Grant Nos.61574166,61334007,61306117,61322408,61221004,and 61274091);Beijing Training Project for the Leading Talents in S&T,China(Grant No.Z151100000315008);the CAEP Microsystem and THz Science and Technology Foundation,China(Grant No.CAEPMT201504)
Three-dimensional(3D) crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability...
supported by the MOST(Grant Nos.2010CB934200 and 2011CBA00600);the National Natural Science Foundation of China(Grant Nos.61176073 and 61221004)
This paper presents an embedded SRAM design for write buffer applications in flash memories.The write buffer is implemented with a newly proposed self-adaptive timing control circuit,an area-saving sense-latch circuit...
supported by the National Natural Science Foundation of China(61322408,61221004,61334007,61274091,61106119 and 61106082);National Basic Research Program of China(2010CB934200 and 2011CBA00602);National High Technology Research and Development Program of China(2011AA010401 and 2011AA010402)
Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast op...