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Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process: 《Chinese Physics B》2017年第8期407-410,共4页王艳蓉杨红徐昊罗维春祁路伟张淑祥王文武闫江朱慧珑赵超陈大鹏叶甜春; supported by the National High Technology Research and Development Program of China(Grant No.2015AA016501);the National Natural Science Foundation of China(Grant No.61306129); In the process of high-k films fabrication, a novel multi deposition multi annealing （MDMA） technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the...; 关键词：high-k/metal gate multi deposition multi annealing stress-induced leakage current post deposi-tion annealing

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations: 《Chinese Physics B》2016年第8期347-351,共5页徐昊杨红罗维春徐烨峰王艳蓉唐波王文武祁路伟李俊峰闫江朱慧珑赵超陈大鹏叶甜春; supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601);the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129);the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Micro Electronics of Chinese Academy of Sciences; The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,i...; 关键词：high-k metal gate TiN capping layer TDDB interface trap density

Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation: 《Chinese Physics B》2016年第8期352-356,共5页徐昊杨红王艳蓉王文武罗维春祁路伟李俊峰赵超陈大鹏叶甜春; supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601);the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129);the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Micro Electronics of Chinese Academy of Sciences; High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to ...; 关键词：high-k metal gate TDDB percolation theory kinetic Monte Carlo trap generation model

Influence of ultra-thin TiN thickness(1.4 nm and 2.4 nm) on positive bias temperature instability(PBTI)of high-k/metal gate nMOSFETs with gate-last process: 《Chinese Physics B》2015年第12期499-502,共4页祁路伟杨红任尚清徐烨峰罗维春徐昊王艳蓉唐波王文武闫江朱慧珑赵超陈大鹏叶甜春; Project supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601);the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129); The positive bias temperature instability（PBTI） degradations of high-k/metal gate（HK/MG） n MOSFETs with thin TiN capping layers（1.4 nm and 2.4 nm） are systemically investigated. In this paper, the trap energy di...; 关键词：positive bias temperature instability（PBTI） HK/MG Ea trap energy distribution

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process: 《Chinese Physics B》2015年第11期464-467,共4页王艳蓉杨红徐昊王晓磊罗维春祁路伟张淑祥王文武闫江朱慧珑赵超陈大鹏叶甜春; supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601);the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129); A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. ...; 关键词：high-k/metal gate time dependent dielectric breakdown multi-deposition multi-annealing

Energy distribution extraction of negative charges responsible for positive bias temperature instability被引量：1: 《Chinese Physics B》2015年第7期448-452,共5页任尚清杨红王文武唐波唐兆云王晓磊徐昊罗维春赵超闫江陈大鹏叶甜春; Project supported by the National Science&Technology Major Projects of the Ministry of Science and Technology of China(Grant No.2009ZX02035);the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129); A new method is proposed to extract the energy distribution of negative charges, which results from electron trapping by traps in the gate stack of n MOSFET during positive bias temperature instability（PBTI） stress ...; 关键词：positive bias temperature instability high-k/metal gate electron trapping energy distribution

Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process: 《Journal of Semiconductors》2015年第1期86-89,共4页任尚清杨红唐波徐昊罗维春唐兆云徐烨锋许静王大海李俊峰闫江赵超陈大鹏叶甜春王文武; Project supported by the Important National Science&Technology Specific Projects(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,61306129); Positive bias temperature instability（PBTI） characteristics and degradation mechanisms of NMOSFET with high-k/metal gate last process have been systematically investigated. The time evolution of threshold voltage sh...; 关键词：positive bias temperature instability（PBTI） high-k metal gate

The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks被引量：1: 《Journal of Semiconductors》2014年第10期187-189,共3页马雪丽杨红王文武殷华湘朱慧珑赵超陈大鹏叶甜春; Project supported by the Important National Science&Technology Specific Projects(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,61306129); ： We introduced a TaN/TiAl/top-TiN triple-layer to modulate the effective work function of a TiN-based metal gate stack by varying the TaN thickness and top-TiN technology process. The results show that a thinner TaN...; 关键词：TAN ALD-TiN PVD-TiN effective work function

An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness: 《Journal of Semiconductors》2014年第9期162-165,共4页马雪丽杨红王文武殷华湘朱慧珑赵超陈大鹏叶甜春; Project supported by the Important National Science & Technology Specific Projects(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,61306129); We evaluated the TiN/TaN/TiA1 triple-layer to modulate the effective work function （EWF） of a metal gate stack for the n-type metal-oxide-semiconductor （NMOS） devices application by varying the TiN/TaN thickness. ...; 关键词：TAN TiA1 Ta-O dipole effective work function

TDDB characteristic and breakdown mechanism of ultra-thin SiO_2/HfO_2 bilayer gate dielectrics被引量：1: 《Journal of Semiconductors》2014年第6期32-37,共6页陶芬芬杨红唐波唐兆云徐烨锋许静王卿璞闫江; Project supported by the Important National Science & Technology Specific Projects(No.2009ZX02035);the National Natural Science of China(No.61306129);the National Found for Fostering Talents of Basic Science(No.J0730318); The characteristics of TDDB （time-dependent dielectric breakdown） and SILC （stress-induced leakage current） for an ultra-thin SiO2/HfO2 gate dielectric stack are studied. The EOT （equivalent-oxide-thickness） of ...; 关键词：HFO2 TDDB SILC bulk trap interface trap

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