云南高校图书馆联盟文献共享服务平台- 国家自然科学基金(61076025)

国家自然科学基金(61076025): 作品数：12被引量：20H指数：4; 导出分析报告; 相关作者：李晋文张民选何小威更多>>; 相关机构：国防科学技术大学更多>>; 相关期刊：《Journal of Semiconductors》《Science China(Technological Sciences)》《红外与毫米波学报》《Chinese Physics B》更多>>; 相关主题：SETPARASITICPULSEEFFECTBIPOLAR更多>>; 相关领域：电子电信化学工程航空宇航科学技术一般工业技术更多>>

The dual role of multiple-transistor charge sharing collection in single-event transients: 《Chinese Physics B》2013年第4期360-364,共5页郭阳陈建军何益百梁斌刘必慰; Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61133007);the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025); As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients （SETs） due to the charge sharing...; 关键词：multiple-transistor charge sharing collection single event transient （SET） pulse quenching effect radiation hardened by design （RHBD）

Parasitic bipolar amplification in a single event transient and its temperature dependence被引量：2: 《Chinese Physics B》2012年第9期607-612,共6页刘征陈书明陈建军秦军瑞刘蓉容; Project supported by the National Natural Science Foundation of China (Grant Nos. 60836004, 61076025, and 61006070);the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20104307120006); Using three-dimensional technology computer-aided design （TCAD） simulation, parasitic bipolar amplification in a single event transient （SET） current of a single transistor and its temperature dependence are studi...; 关键词：single event transient parasitic bipolar amplification funnel-aided drift temperature dependence

3-D TCAD simulation study of the single event effect on 25 nm raised source-drain FinFET被引量：4: 《Science China(Technological Sciences)》2012年第6期1576-1580,共5页QIN JunRui CHEN ShuMing CHEN JianJun; supported by the National Natural Science Foundation of China (Grant Nos. 60836004,61006070,and 61076025); Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is studied.Based on the calibrated 3-D models by process simulation,it is found that the amo...; 关键词：FINFET single event effect single event transient charge collection

Effect of p-well contact on n-well potential modulation in a 90 nm bulk technology被引量：4: 《Science China(Technological Sciences)》2012年第4期1001-1006,共6页DU YanKang CHEN ShuMing LIU BiWei LIANG Bin; supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836009);the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025); The effect of p-well contact on the n-well potential modulation in a 90 nm bulk technology with P+ deep well is studied based on three-dimensional (3-D) TCAD device simulations. Simulation results illustrate that the ...; 关键词：well potential modulation （WPM） P＋ deep well well contact

Single event transient pulse attenuation effect in three-transistor inverter chain被引量：4: 《Science China(Technological Sciences)》2012年第4期867-871,共5页CHEN JianJun CHEN ShuMing LIANG Bin LIU FanYu; supported by the Key Program of the National Natural Science Foundation of China (Grant No.60836004);the National Natural Science Foundation of China (Grant Nos.61006070,61076025); In this paper, compared with two-transistor (2T) inverter chain, the production and propagation of P-hit single event transient (SET) in three-transistor (3T) inverter chain is studied in depth based on three-dimensio...; 关键词：single event transient （SET） pulse attenuation effect parasitic bipolar amplification effect

Modeling to predict the time evolution of negative bias temperature instability(NBTI) induced single event transient pulse broadening: 《Science China(Technological Sciences)》2012年第4期1101-1106,共6页CHEN ShuMing CHEN JianJun CHI YaQing LIU FanYu HE YiBai; supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004);the National Natural Science Foundation of China (Grant Nos. 61006070, 61076025); An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with t...; 关键词：negative bias temperature instability （NBTI） single event transient （SET） pulse broadening analytical model

The effect of P^+ deep well doping on SET pulse propagation被引量：7: 《Science China(Technological Sciences)》2012年第3期665-672,共8页QIN JunRui CHEN ShuMing LIU BiWei LIU FanYu CHEN JianJun; supported by the National Natural Science Foundation of China (Grant Nos. 60836004, 61006070, and 61076025); The change of P+ deep well doping will affect the charge collection of the active and passive devices in nano-technology,thus affecting the propagated single event transient(SET) pulsewidths in circuits.The propagated...; 关键词：P＋ deep well SET pulsewidths SET propagation QUENCHING charge collection

New insight into the parasitic bipolar amplification effect in single event transient production被引量：1: 《Chinese Physics B》2012年第1期334-339,共6页Chen Jian-Jun Chen Shu-Ming Liang Bin Deng Ke-Feng; Project supported by the Key Program of the National Natural Science Foundation of China(Grant No.60836004);the National Natural Science Foundation of China(Grant Nos.61006070 and 61076025); In this paper, a new method is proposed to study the mechanism of charge collection in single event transient （SET） production in 90 nm bulk complementary metal oxide semiconductor （CMOS） technology. We find that ...; 关键词：parasitic bipolar amplification effect （bipolar effect） single event transient substrateprocess

Dynamic thermal management by greedy scheduling algorithm: 《Journal of Central South University》2012年第1期193-199,共7页QU Shuang-xi ZHANG Min-xuan LIU Guang-hui LIU Tao; Projects(2009AA01Z124,2009AA01Z102) supported by the National High Technology Research and Development Program of China;Projects(60970036,61076025) supported by the National Natural Science Foundation of China; Chip multiprocessors(CMPs) allow thread level parallelism,thus increasing performance.However,this comes with the cost of temperature problem.CMPs require more power,creating non uniform power map and hotspots.Aiming ...; 关键词：greedy scheduling algorithm chip multiprocessor thermal-aware

Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs被引量：1: 《Chinese Physics B》2011年第11期346-352,共7页陈建军陈书明梁斌何益百池雅庆邓科峰; supported by the Key Program of the National Natural Science Foundation of China(Grant No.60836004);the National Natural Science Foundation of China(Grant Nos.61006070 and 61076025); Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose （TID） effect. However, their capability of resisting the hot carrie...; 关键词：annular gate nMOSFETs total ionizing dose effect hot carrier effect annular sourcenMOSFETs

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