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国家自然科学基金(s60736033): 作品数：16被引量：11H指数：2; 导出分析报告; 相关作者：陈炽胡仕刚吴笑峰郝跃马晓华更多>>; 相关机构：西安电子科技大学更多>>; 相关期刊：《Science China(Physics,Mechanics & Astronomy)》《Science China(Technological Sciences)》《Chinese Physics B》《Science Bulletin》更多>>; 相关主题：ALGAN/GANDEGRADATIONGANHEMTALN更多>>; 相关领域：电子电信理学电气工程经济管理更多>>

The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT: 《Science China(Physics,Mechanics & Astronomy)》2012年第1期40-43,共4页BI ZhiWei FENG Qian ZHANG JinCheng LU Ling MAO Wei GU WenPing MA XiaoHua HAO Yue; supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191);the Fundamental Research Funds for the Central Universities (Grant No. JY10000925002); AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with atomic layer deposited （ALD） NbA10 gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 ...; 关键词：AIGAN/GAN MIS-HEMT proton irradiation TRAP

The passivation mechanism of nitrogen ions on the gate leakage current of HfO_2/AlGaN/GaN MOS-HEMTs: 《Science China(Physics,Mechanics & Astronomy)》2011年第12期2170-2173,共4页BI ZhiWei HAO Yue FENG Qian JIANG TingTing CAO YanRong ZHANG JinCheng MAO Wei LU Ling ZHANG Yue; supported by the National Natural Science Foundation of China (Grant Nos.60736033,60890191);the Fundamental Research Funds for the Central Universities (Grant Nos.JY10000925002,JY10000-904009); In this paper, we systematically study the positive gate leakage current in AlGaN/GaN metal-oxide-semiconductor high electron-mobility transistors (MOS-HEMTs) with HfO 2 dielectric using atomic layer deposition (ALD)....; 关键词：ALGAN/GAN MOS-HEMT PASSIVATION gate leakage current nitrogen ions

The effect of a HfO_2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT被引量：1: 《Chinese Physics B》2011年第9期365-371,共7页毛维杨翠郝跃马晓华王冲张进成刘红侠毕志伟许晟瑞杨林安杨凌张凯张乃千裴轶; Project supported by the Fundamental Research Funds for the Central Universities,China (Grant No.JY10000925002);the National Key Science & Technology Special Project,China (Grant No.2008ZX01002-002);the National Natural Science Foundation of China (Grant Nos.60736033,60976068,and 61076097); A GaN/A10.3Ga0.TN/A1N/GaN high-electron mobility transistor utilizing a field plate （with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source） over a 165-nm sputtered HfO2 insulator （HfO2...; 关键词：Hf02 insulator HfO2-FP-HEMT FP efficiency proportional design

Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study: 《Chinese Physics B》2011年第8期394-397,共4页毕志伟胡振华毛维郝跃冯倩曹艳荣高志远张进成马晓华常永明李志明梅楠; Project supported by the State Key Program and Major Program of the National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191);the Fundamental Research Funds for the Central Universities (Grant Nos. JY10000925002 and JY10000904009); This paper studies the drain current collapse of A1GaN/GaN metal insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with NbA10 dielectric by applying dual-pulsed stress to the gate and drain of t...; 关键词：metal insulator-semiconductor high electron-mobility transistor GaN current collapse passivation

Development and characteristic analysis of a field-plated Al_2O_3 /AlInN/GaN MOS-HEMT: 《Chinese Physics B》2011年第1期8-12,共5页毛维杨翠郝跃张进成刘红侠毕志伟许晟瑞薛军帅马晓华王冲杨林安张金风匡贤伟; Project supported by the Fundamental Research Funds for the Central Universities,China(Grant No.JY10000925002);the National Key Science and Technology Special Project(Grant No.2008ZX01002-002);the National Natural Science Foundation of China(Grant Nos.60736033,60976068 and 61076097);New Teacher Foundation for Doctoral Program of Ministry of Education of China(Grant No.200807011012); We present an AIInN/AlN/GaN MOS-HEMT with a 3 nm ultra-thin atomic layer deposition （ALD） Al2O3 dielectric layer and a 0.3 μm field-plate （FP）-MOS-HEMT. Compared with a conventional AIInN/AlN/GaN HEMT （HEMT） wi...; 关键词：field-plate ultra-thin Al2O3 gate dielectric FP-MOS-HEMT atomic layer deposited

AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition: 《Chinese Physics B》2010年第7期513-517,共5页毕志伟冯倩郝跃王党会马晓华张进成全思许晟瑞; supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191); We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor （MIS-HEMT） with an NbAIO high-k dielectric deposited by atomic layer deposition （ALD）. Surface morphology of samples are obse...; 关键词：ALGAN/GAN MIS-HEMT NbAIO HIGH-K

Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers被引量：4: 《Science China(Technological Sciences)》2010年第6期1567-1571,共5页XUE JunShuai,HAO Yue,ZHANG JinCheng & NI JinYu Key Laboratory of Wide Band-Gap Semiconductors and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China; supported by the National Natural Science Foundation of China (Grant Nos. 60736033,60676048); The electrical properties of two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures using high temperature (HT) AlN interlayers (ITs) grown on c-plane sapphire substrate by metal organic chemical vapor depo...; 关键词：ALGAN/GAN HETEROSTRUCTURES ELECTRICAL properties two DIMENSIONAL electron gas

Comparative study of different properties of GaN films grown on(0001) sapphire using high and low temperature AlN interlayers: 《Chinese Physics B》2010年第5期494-498,共5页薛军帅郝跃张进成倪金玉; Project supported by the National Natural Science Foundation of China (Grant Nos. 60736033 and 60676048); Comparative study of high and low temperature AlN interlayers and their roles in the properties of GaN epilayers prepared by means of metal organic chemical vapour deposition on （0001） plane sapphire substrates is c...; 关键词：GaN AlN interlayers high temperature

Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor: 《Chinese Physics B》2010年第4期402-407,共6页曹艳荣马晓华郝跃胡世刚; Project supported by the National Natural Science Foundation of China (Grant Nos. 60736033 and 60376024);the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2007BAK25B03); This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor （PMOSFET） degradation during negative bias temperature （NBT） stress. When a relatively large g...; 关键词：negative bias temperature instability drain bias electric field localized damage

An X-band four-way combined GaN solid-state power amplifier被引量：1: 《Journal of Semiconductors》2010年第1期58-64,共7页陈炽郝跃冯辉谷文萍李志明胡仕刚马腾; supported by the National Natural Science Foundation of China(Nos.60736033,60676048).; An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self- developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al- GaN/GaN HEMT...; 关键词：A1GaN/GaN HEMT solid-state power amplifiers Wilkinson hybrid coupler

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