Supported by the National Key Research and Development Program of China(2018YFB2200500);the National Natural Science Foundation of China(51402230,51177134,21503153);Natural Science Basic Research Plan in Shaanxi Province of China(2017JM6075,2015JM6282);Scientific Research Program Funded by Shaanxi Provincial Education Department(17JK0335)。
Si/SiC heterostructures with different growth temperatures were prepared on 6 HSiC(0001)by LPCVD.Current mode atomic force microscopy and transmission electron microscopy were employed to investigate the electrical pr...
Project supported by the National Natural Science Foundation of China(No.51177134);the Natural Science Basic Research Plan in Shaanxi Province of China(No.2015JM6286)
β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Ram...
Project supported by the National Natural Science Foundation of China(No.51177134)
We give the first report on the experimental investigation of a p-β-FeSi2/n-4H-SiC heterojunction. A β-/%FeSiE/n-4H-SiC heterojunction near-infrared photodiode was fabricated on 4H-SiC substrate by magnetron sputter...
Project supported by the National Natural Science Foundation of China(Grant Nos.61076011 and 51177134)
6H-SiC (1010) surface and Si (220)/6H-SIC (1010) interface with different stacking sites are investigated using first-principles calculations. Surface energies of 6H-SiC (1010) (case I, case II, and case III...
Project supported by the National Natural Science Foundation of China (Grant Nos. 60876050 and 51177134)
In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide(β-FeSi2) as the active region for the first time.The optoelectronic characteristics o...