国家自然科学基金(51177134)

作品数:7被引量:1H指数:1
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相关作者:陈治明赵萌黄磊高战军李连碧更多>>
相关机构:西安理工大学更多>>
相关期刊:《Journal of Beijing Institute of Technology》《Chinese Physics B》《人工晶体学报》《微纳电子技术》更多>>
相关主题:FESIΒ-FESI24H-SIC6H-SICSIC更多>>
相关领域:电子电信理学机械工程更多>>
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Research of Current Mode Atomic Force Microscopy (C-AFM) for Si/SiC Heterostructures on 6H-SiC(0001)
《Journal of Beijing Institute of Technology》2020年第2期184-189,共6页Song Feng Lixun Song Yuan Zang Zheyan Tu Lianbi Li 
Supported by the National Key Research and Development Program of China(2018YFB2200500);the National Natural Science Foundation of China(51402230,51177134,21503153);Natural Science Basic Research Plan in Shaanxi Province of China(2017JM6075,2015JM6282);Scientific Research Program Funded by Shaanxi Provincial Education Department(17JK0335)。
Si/SiC heterostructures with different growth temperatures were prepared on 6 HSiC(0001)by LPCVD.Current mode atomic force microscopy and transmission electron microscopy were employed to investigate the electrical pr...
关键词:Si/6H-SiC heterostructure electrical properties current mode AFM chemical vapor deposition 
调制掺杂结构Si/SiC异质结的光电特性模拟
《微纳电子技术》2016年第1期18-24,共7页何映锋 陈治明 
国家自然科学基金资助项目(51177134)
为了进一步改善Si/SiC异质结光电二极管的性能,采用类似掺杂超晶格的结构,将Si层由多个具有量子尺寸的p型薄层和n型薄层周期性地叠合而成,在Si层中形成一系列不同层的电子势阱和空穴势阱,以延迟光生载流子的复合,延长光生载流子的复合寿...
关键词:Si/SiC异质结 调制掺杂结构 光电效应 光电流密度 Silvaco软件 
β-FeSi_2 films prepared on 6H-SiC substrates by magnetron sputtering被引量:1
《Journal of Semiconductors》2015年第6期29-34,共6页李虹 蒲红斌 郑春蕾 陈治明 
Project supported by the National Natural Science Foundation of China(No.51177134);the Natural Science Basic Research Plan in Shaanxi Province of China(No.2015JM6286)
β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Ram...
关键词:β-FeSi2 films 6H-SiC substrates magnetron sputtering X-ray diffraction (XRD) 
Photoelectric properties of p-β-FeSi_2/n-4H-SiC heteroj unction near-infrared photodiode被引量:1
《Journal of Semiconductors》2015年第5期58-60,共3页郑春蕾 蒲红斌 李虹 陈治明 
Project supported by the National Natural Science Foundation of China(No.51177134)
We give the first report on the experimental investigation of a p-β-FeSi2/n-4H-SiC heterojunction. A β-/%FeSiE/n-4H-SiC heterojunction near-infrared photodiode was fabricated on 4H-SiC substrate by magnetron sputter...
关键词:Β-FESI2 magnetron sputtering p-β-FeSi2/n-4H-SiC heterojunction photoelectric properties 
First-principles calculations on Si(220) located 6H–SiC(10■0)surface with different stacking sites
《Chinese Physics B》2014年第10期417-423,共7页贺小敏 陈治明 蒲红斌 李连碧 黄磊 
Project supported by the National Natural Science Foundation of China(Grant Nos.61076011 and 51177134)
6H-SiC (1010) surface and Si (220)/6H-SIC (1010) interface with different stacking sites are investigated using first-principles calculations. Surface energies of 6H-SiC (1010) (case I, case II, and case III...
关键词:first-principles calculations surface interface adhesion energy 
6H-SiC衬底上多晶Si薄膜热壁CVD间隔生长与结构表征
《人工晶体学报》2014年第8期1965-1969,共5页高战军 陈治明 李连碧 赵萌 黄磊 
国家自然科学基金(51177134)
在热壁LPCVD系统中利用间隔生长法在6H-SiC衬底上淀积Si薄膜,采用XRD、SEM、激光共聚焦显微镜和拉曼光谱对Si薄膜的表面形貌和结构进行表征。结果表明:相比于连续生长法,用间隔法制备Si薄膜的速率有所降低,但表面粗糙度有所减小,同时晶...
关键词:热壁LPCVD 多晶Si薄膜 择优取向 表面粗糙度 
Simulation of near-infrared photodiode detectors based on β-FeSi_2/4H-SiC heterojunctions被引量:1
《Chinese Physics B》2013年第3期447-452,共6页蒲红斌 贺欣 全汝岱 曹琳 陈治明 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60876050 and 51177134)
In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide(β-FeSi2) as the active region for the first time.The optoelectronic characteristics o...
关键词:β-FeSi2/4H-SiC near-infrared photodetector spectral response 
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