supported by the National Natural Science Foundation of China(No.61176043)
The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. The simulated results show that the n-doped LED exhibits the superior luminescence and modulation performance,...
Project supported by the National Natural Science Foundation of China (Grant No.61176043);the Special Funds for Strategic and Emerging Industries Projects of Guangdong Province,China (Grant Nos.2010A081002005,2011A081301003,and 2012A080304016)
The characteristics of a blue light-emitting diode (LED) with a p-InA1GaN hole injection layer (HIL) is analyzed numerically. The simulation results indicate that the newly designed structure presents superior opt...
Project supported by the National Natural Science Foundation of China(Grant No.61176043);the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong Province,China(Grant Nos.2010A081002005,2011A081301003,and 2012A080304016);the First Phase of Construction of Guangdong Research Institute of Semiconductor Lighting Industrial Technology,China(Grant No.2010A081001001);the High Efficiency LED Epitaxy and Chip Structure and Key Technology for Industrialization,China(Grant No.2012A080302002);the Youth Funding of South China Normal University(Grant No.2012KJ018)
In this study, the efficiency droop of an InGaN light-emitting diode (LED) is reduced slgnlncanUy oy using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the d...