supported by the National High Technology Research and Development of China (Grant Nos. 2006AA01Z256,2007AA03Z419 and 2007AA03Z417);the State Key Development Program for Basic Research of China (Grant Nos. 2006CB604901and 2006CB604902);the National Natural Science Foundation of China (Grant Nos. 90401025,60736036,60706009 and 60777021)
We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photo- diodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP s...
Project supported by the National High Technology Research and Development Program of China (No.2006AA01Z256);the State Key Development Program for Basic Research of China (Nos.2006CB604901,2006CB604902);the National Natural Science Foundationof China (No.90401025)
A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a twostep ...
Project supported by the National Natural Science Foundation of China (Grant Nos 60706009, 90401025, 60736036, 60777021 and60476009);the National Key Basic Research Program of China (Grant Nos 2006CB604901 and 2006CB604902);the National High Technology Research and Development Program of China (Grant Nos 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417)
Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low grow...
supported by the National Natural Science Foundation of China (Grant No 90401025);the National 973 project (Grant No 2006CB604901)
This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption m...
A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating a simple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic "and" function...
A 1.55μm InGaAsP-InP three-section DFB laser with hybrid grating is fabricated and self-pulsations (SP) with frequencies around 20GHz are observed. The mechanism of SP generation in this device is researched. Furth...
Project supported by the National Natural Science Foundation of China (Grant No 90401025). Acknowledgments The authors are grateful to the Multiple-function 0ptoelectronic Integration group, Institute of Semiconductors, CAS for sponsoring this project. We extend our thanks to Professor Wang Zi-Yu of Peking University for microwave signal testing.
A new device of two parallel distributed feedback (DFB) lasers integrated monolithically with Y-branch waveguide coupler was fabricated by means of quantum well intermixing. Optical microwave signal was generated in...