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TRAP: 作品数：748被引量：1677H指数：16; 导出分析报告; 相关领域：医药卫生更多>>; 相关作者：崔玉东董在杰曲疆奇苏胜彦袁新华更多>>; 相关机构：黑龙江八一农垦大学南京农业大学中国水产科学研究院淡水渔业研究中心北京大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划国家科技支撑计划更多>>

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy: 《Journal of Semiconductors》2024年第3期58-63,共6页Jin Sui Jiaxiang Chen Haolan Qu Yu Zhang Xing Lu Xinbo Zou; supported by ShanghaiTech University Startup Fund 2017F0203-000-14;the National Natural Science Foundation of China(Grant No.52131303);Natural Science Foundation of Shanghai(Grant No.22ZR1442300);in part by CAS Strategic Science and Technology Program(Grant No.XDA18000000).; Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-sec...; 关键词：GaN deep level transient spectroscopy minority carrier trap time constant trap concentration

Trap analysis on Pt-AlGaN/GaN Schottky barrier diode through deep level transient spectroscopy: 《Journal of Semiconductors》2023年第4期92-97,共6页Ashish Kumar Jayjit Mukherjee D.S.Rawal K.Asokan D.Kanjilal; the financial support received from the Department of Science and Technology,India through DST-INSPIRE Faculty scheme(DST/INSPIRE/04/2015/001572).; Trap characterization on GaN Schottky barrier diodes(SBDs)has been carried out using deep-level transient spectroscopy(DLTS).Selective probing by varying the ratio of the rate window values(r)incites different trap si...; 关键词：deep traps Pt-SBD DLTS rate window defects

Clarifying the atomic origin of electron killers in β-Ga_(2)O_(3) from the first-principles study of electron capture rates: 《Journal of Semiconductors》2022年第11期61-69,共9页Zhaojun Suo Linwang Wang Shushen Li Junwei Luo; This work was supported by the National Key Research and Development Program of China under Grant No.2018YFB2200105;the Key Research Program of Frontier Sciences,CAS under Grant No.ZDBS-LY-JSC019;the National Natural Science Foundation of China(NSFC)under Grant Nos.11925407 and 61927901.; The emerging wide bandgap semiconductorβ-Ga_(2)O_(3) has attracted great interest due to its promising applications for high-power electronic devices and solar-blind ultraviolet photodetectors.Deep-level defects inβ...; 关键词：wide bandgap semiconductor defects carrier trap electron-phonon coupling first-principles calculation

Additive and interfacial control for efficient perovskite light-emitting diodes with reduced trap densities被引量：1: 《Journal of Semiconductors》2022年第5期32-44,共13页Shun Tian Chen Zou Runchen Lai Chungen Hsu Xuhui Cao Shiyu Xing Baodan Zhao Dawei Di; supported by the National Natural Science Foundation of China(NSFC)(61975180,62005243);KunPeng Programme of Zhejiang Province(D.D.);Zhejiang University Education Foundation Global Partnership Fund;the Natural Science Foundation of Zhejiang Province(LR21F050003);Fundamental Research Funds for the Central Universities(2020QNA5002)。; Metal halide perovskite semiconductors show excellent optoelectronic properties including tunable bandgaps[1,2],narrow emission bandwidths[3]and high luminescence quantum efficiencies[4],making them an ideal candidate...; 关键词：DIODES OPTOELECTRONIC light

Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond: 《Journal of Semiconductors》2020年第12期90-93,共4页Rui Zhou Cui Yu Chuangjie Zhou Jianchao Guo Zezhao He Yanfeng Wang Feng Qiu Hongxing Wang Shujun Cai Zhihong Feng; This work was supported by the National Natural Science Foundation of China(Grant No.51702296);Excellent Youth Foundation of Hebei Scientific Committee(Grant No.F2019516002).; In this work,we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra,pulsed I–V characteristics analy...; 关键词：DIAMOND TRANSISTOR TRAP DEFECT power density

Surface traps-related nonvolatile resistive switching memory effect in a single SnO2:Sm nanowire被引量：1: 《Journal of Semiconductors》2020年第1期72-77,共6页Huiying Zhou Haiping Shi Baochang Cheng; financially supported by the National Natural Science Foundation of China(No.51571107);the Key Project of Hunan Provincial Department Education(No.17A222); For nanostructure SnO2,it is very difficult for its electric properties to accurately control due to the presence of abundant surface states.The introduction of Sm can improve the traps in surface space charge region ...; 关键词：NANOWIRE surface state TRAP memory effect

Direct evidence of traps controlling the carriers transport in SnO_(2) nanobelts被引量：1: 《Journal of Semiconductors》2017年第12期8-12,共5页Olivia M.Berengue Adenilson J.Chiquito; the Brazilian research funding agencies(Grant 13/19692-0,15/21816-4 Sao Paulo Research Foundation(FAPESP));CNPq(477716/2013-0)for the financial support; This work reports on direct evidence of localized states in undoped Sn02 nanobelts. Effects of disorder and electron localization were observed in Schottky barrier dependence on the temperature and in thermally stimul...; 关键词：TRAP TRANSPORT SNO2

Mechanism of oxide thickness and temperature dependent current conduction in n^+-polySi/SiO_2/p-Si structures—a new analysis: 《Journal of Semiconductors》2017年第10期50-55,共6页Baoxing Sun Ruobing Xie Cun Yu Cheng Li Hongjie Xu Piyas Samanta; The conduction mechanism of gate leakage current through thermally grown silicon dioxide（Si02）films on（100） p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polys...; 关键词：FN tunneling PF emission image force lowering trap depth

Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT被引量：1: 《Journal of Semiconductors》2016年第4期44-49,共6页J.Panda K.Jena R.Swain T.R.Lenka; We have developed a physics based analytical model for the calculation of threshold voltage, two dimensional electron gas（2DEG） density and surface potential for Al Ga N/Ga N metal oxide semiconductor high electron ...; 关键词：2DEG AlGaN GaN heterojunction MOSHEMT trap capacitance

Simulating and modeling the breakdown voltage in a semi-insulating GaAs P^+N junction diode: 《Journal of Semiconductors》2014年第8期60-68,共9页A.Resfa Brahimi.R.Menezla M.Benchhima; This work aims to determine the characteristic PN junction diode, subject to a reverse polarization, while I （breakdown voltage） of the inverse current in a GaAs specifying the parameters that influence the breakdow...; 关键词：the phenomenon of ionization by impact the integrals of ionizations In and Ip the potential elec-trostatic and electric field variation of the trap state density Art the integral of ionization reversecurrent-breakdown voltage the current-breakdown voltage characteristics of the P＋N junction diode

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