云南高校图书馆联盟文献共享服务平台- PHOTORESPONSE

PHOTORESPONSE: 作品数：84被引量：126H指数：5; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：赵东旭欧阳丹张青松廖永贵解孝林更多>>; 相关机构：华中科技大学中国科学技术大学天津大学安徽理工大学更多>>; 相关期刊：《Optoelectronics Letters》《Nano-Micro Letters》《Electronics Science Technology and Application》《Science Bulletin》更多>>; 相关基金：国家自然科学基金中国博士后科学基金国家重点基础研究发展计划王宽诚敎育基金更多>>

Edge assisted epitaxy of CsPbBr_(3)nanoplates on Bi_(2)O_(2)Se nanosheets for enhanced photoresponse: 《Chinese Physics B》2022年第4期693-699,共7页Haotian Jiang Xing Xu Chao Fan Beibei Dai Zhuodong Qi Sha Jiang Mengqiu Cai Qinglin Zhang; the National Natural Science Foundation of China(Grant No.51772088);Hunan Provincial Innovation Foundation for Postgraduate,China(Grant No.CX20200422)。; Bi_(2)O_(2)Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties.However,it is still a great challenge to construct the heterostructures with ...; 关键词：Bi_(2)O_(2)Se heterostructures photogenerated carriers PHOTORESPONSE

Anisotropic photoresponse of layered rhenium disulfide synaptic transistors: 《Chinese Physics B》2021年第8期49-54,共6页Chunhua An Zhihao Xu Jing Zhang Enxiu Wu Xinli Ma Yidi Pang Xiao Fu Xiaodong Hu Dong Sun Jinshui Miao Jing Liu; Layered ReS_(2) with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices.However,systematic characterizations of the...; 关键词：ReS2 in-plane anisotropy anisotropic photoresponse PHOTOTRANSISTOR

Effect of graphene grain boundaries on MoS2/graphene heterostructures: 《Chinese Physics B》2020年第6期44-48,共5页Yue Zhang Xiangzhe Zhang Chuyun Deng Qi Ge Junjie Huang Jie Lu Gaoxiang Lin Zekai Weng Xueao Zhang Weiwei Cai; National Natural Science Foundation of China(Grant No.11874423).; The grain boundaries of graphene are disordered topological defects,which would strongly affect the physical and chemical properties of graphene.In this paper,the spectral characteristics and photoresponse of MoS2/gra...; 关键词：PHOTORESPONSE HETEROSTRUCTURES GRAIN-BOUNDARY

Rectifying characteristics and solar-blind photoresponse in β-Ga2O3/ZnO heterojunctions被引量：1: 《Chinese Physics B》2019年第8期403-407,共5页Xiao-Fei Ma Yuan-Qi Huang Yu-Song Zhi Xia Wang Pei-Gang Li Zhen-Ping Wu Wei-Hua Tang; Project supported by the National Natural Science Foundation of China(Grant Nos.51572033,61774019,61704153,and 11404029);the Fund from the State Key Laboratory of Information Photonics and Optical Communications(BUPT),China;the Fundamental Research Funds for the Central Universities,China; Heterojunctions composed ofβ-Ga2 O3 and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method.The heterojunction possesses excellent rectifying characteristics with an asymm...; 关键词：GA2O3 SOLAR blind PHOTODETECTOR heterojunction SELF-POWERED

Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga_2O_3被引量：1: 《Chinese Physics B》2019年第4期375-380,共6页Chao Yang Hongwei Liang Zhenzhong Zhang Xiaochuan Xia Heqiu Zhang Rensheng Shen Yingmin Luo Guotong Du; Project supported by National Key Research and Development Plan of China(Grant Nos.2016YFB0400600 and 2016YFB0400601);the National Natural Science Foundation of China(Grant Nos.61574026,11675198,61774072,and 11405017);the Natural Science Foundation of Liaoning Province,China(Grant Nos.201602453 and 201602176);China Postdoctoral Science Foundation Funded Project(Grant No.2016M591434);the Dalian Science and Technology Innovation Fund(Grant No.2018J12GX060); A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultra...; 关键词：Ga2O3 single crystal solar-blind PHOTODETECTOR high temperature

Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT: 《Chinese Physics B》2016年第10期525-528,共4页王冲赵梦荻何云龙郑雪峰张坤魏晓晓毛维马晓华张进成郝跃; supported by the National Natural Science Foundation of China(Grant Nos.61574110,61574112,and 61106106); AZO-gated and Ni/Au-gated AlGaN/GaN HEMTs are fabricated successfully,and an excellent transparency of AZOgated electrode is achieved.After a negative gate bias stress acts on two kinds of the devices,their photorespo...; 关键词：ALGAN/GAN HEMT AZO TRAP

Effects of surface adsorbed oxygen, applied voltage, and temperature on UV photoresponse of ZnO nanorods被引量：3: 《Chinese Physics B》2015年第10期501-506,共6页宗仙丽朱荣; Project supported by the National Natural Science Foundation of China(Grant No.91123017); The ultraviolet（UV） photoresponses of ZnO nanorods directly grown on and between two micro Au-electrodes by using electric-field-assisted wet chemical method are measured comprehensively under different conditions, ...; 关键词：ZnO nanorods UV photoresponse surface effect applied voltage effect

Enhanced ultraviolet photoresponse based on ZnO nanocrystals/Pt bilayer nanostructure: 《Chinese Physics B》2015年第6期534-539,共6页佟晓林夏晓智李青侠; Project supported by the National Natural Science Foundation of China(Grant No.41176156); The development of solution strategies for Zinc oxide （ZnO） quantum dots provides a pathway to utilizing ZnO nanocrystal thin films in optoelectronic devices. In this work, quasi-spherical ZnO quantum dots with a di...; 关键词：zinc oxide NANOCRYSTALS PHOTORESPONSE ion sputtering plasma treatment

Gate-dependent photoresponse in self-assembled graphene p–n junctions: 《Chinese Physics B》2015年第6期603-606,共4页尹伟红王玉冰韩勤杨晓红; Project supported by the High Technology Research and Development Program of China(Grant No.2013AA031401);the National Natural Science Foundation of China(Grant Nos.61176053,61274069,and 61435002);the National Basic Research Program,China(Grant No.2012CB933503); The intrinsic photocurrent generation mechanism of a self-assembled graphene p-n junction operating at 1.55 ~tm is investigated experimentally. It is concluded that both a photovoltage effect and a photothermoelectric...; 关键词：GRAPHENE PHOTODETECTOR PHOTOVOLTAGE photothermoelectric

Analysis of optoelectronic properties of TiO_2 nanowiers/Si heterojunction arrays被引量：2: 《Chinese Physics B》2014年第10期469-471,共3页Saeideh Ramezani Sani; The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emi...; 关键词：TiO2 nanowires PHOTORESPONSE I-V characteristics HETEROJUNCTION

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