云南高校图书馆联盟文献共享服务平台- P-TYPE

P-TYPE: 作品数：237被引量：340H指数：8; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：傅玉灿严明华李曙生肖冰徐鸿钧更多>>; 相关机构：中国科学院国立台北科技大学开封广佳汽车饰件有限公司浙江大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划北京市自然科学基金高等学校学科创新引智计划更多>>

Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells: 《Journal of Semiconductors》2025年第4期63-70,共8页Napasuda Wichaiyo Yuyao Wei Chao Ding Guozheng Shi Witoon Yindeesuk Liang Wang Huān Bì Jiaqi Liu Shuzi Hayase Yusheng Li Yongge Yang Qing Shen; supported by MEXT KAKENHI Grant(24K01295,26286013).; Traditional p-type colloidal quantum dot(CQD)hole transport layers(HTLs)used in CQD solar cells(CQDSCs)are commonly based on organic ligands exchange and the layer-by-layer(LbL)technique.Nonetheless,the ligand detachm...; 关键词：quantum dot solar cells hole transport layer PBS p-type ink inorganic ligands

Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers被引量：2: 《Journal of Semiconductors》2023年第5期62-68,共7页Siyi Huang Masao Ikeda Minglong Zhang Jianjun Zhu Jianping Liu; financially supported by the National Key Research and Development Program of China(2017YFE0131500);the Key Research and Development Program of Guangdong Province(2020B090922001);National Natural Science Foundation of China(61834008,62150710548);Key Research and Development Program of Jiangsu province(BE2020004,BE2021008-1);Guangdong Basic and Applied Basic Research Foundation(2019B1515120091)。; A suitable contacting scheme for p-(Al)GaN facilitating quick feedback and accurate measurements is proposed in this study.22 nm p^(+)-GaN followed by 2 nm p-In_(0.2)Ga_(0.8)N was grown on p-type layers by metal-organ...; 关键词：GAN electrical properties ohmic contact

RF performance evaluation of p-type NiO-pocket based β-Ga_(2)O_(3)/ black phosphorous heterostructure MOSFET: 《Journal of Semiconductors》2020年第12期101-106,共6页Narendra Yadava Shivangi Mani R.K.Chauhan; The radio-frequency (RF) performance of the p-type NiO-pocket based β-Ga_(2)O_(3)/black phosphorous heterostructureMOSFET has been evaluated. The key figure of merits (FOMs) for device performance evaluation include ...; 关键词：wide band-gap semiconductor RF FOMs Ga_(2)O_(3) black phosphorus

Realizing super-long Cu_2O nanowires arrays for high-efficient water splitting applications with a convenient approach被引量：2: 《Journal of Semiconductors》2019年第5期55-60,共6页Nasori Nasori Tianyi Dai Xiaohao Jia Agus Rubiyanto Dawei Cao Shengchun Qu Zhanguo Wang Zhijie Wang Yong Lei; supported by European Research Council(HiNaPc:737616);European Research Council(ThreeDsurface:240144);BMBF(ZIK-3DNanoDevice:03Z1MN11);DFG(LE2249_4-1);BMBF(Meta-ZIK-BioLithoMorphie:03Z1M511);National Natural Science Foundation of China(Nos.21577086,51702130,21503209);Natural Science Foundation of Jiangsu Province(BK 20170550);Jiangsu Specially-Appointed Professor Program;Hundred-Talent Program(Chinese Academy of Sciences);Beijing Natural Science Foundation(No.2162042);Key Research Program of Frontier Science,CAS(No.QYZDBSSW-SLH006); Nanowire(NW) structures is an alternative candidate for constructing the next generation photoelectrochemical water splitting system, due to the outstanding optical and electrical properties. NW photoelectrodes compar...; 关键词：super-long nanowires P-TYPE CU2O AAO template PHOTOELECTROCHEMICAL water splitting

Growth and characteristics of p-type doped GaAs nanowire: 《Journal of Semiconductors》2018年第5期26-29,共4页Bang Li Xin Yan Xia Zhang Xiaomin Ren; Project supported by the National Natural Science Foundation of China(Nos.61376019,61504010,61774021);the Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),China(Nos.IPOC2017ZT02,IPOC2017ZZ01); The growth of p-type GaAs nanowires（NWs）on GaAs（111）B substrates by metal-organic chemical vapor deposition（MOCVD）has been systematically investigated as a function of diethyl zinc（DEZn）flow.The growth rate of...; 关键词：nanowire GaAs p-doped VLS

Influence of band gap of p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density in thin-film silicon solar cells被引量：1: 《Journal of Semiconductors》2017年第11期76-80,共5页Shuwei Zhang Xiangbo Zeng; Project partly supported by the National High Technology Research and Development Program of China(No.2011AA050504); The impact of the optical band gap（Eg） of a p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density（Jsc） of a thin-film silicon solar cell is assessed. We have found that the Jsc rea...; 关键词：nanocrystalline silicon band gap p-layer short-circuit current density solar cells

Research on ZnO/Si heterojunction solar cells被引量：1: 《Journal of Semiconductors》2017年第5期62-72,共11页Li Chen Xinliang Chen Yiming Liu Ying Zhao Xiaodan Zhang; Project supported by the State Key Development Program for Basic Research of China(Nos.2011CBA00706,2011CBA00707);the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan(No.13JCZDJC26900);the Tianjin Major Science and Technology Support Project(No.11TXSYGX22100);the National High Technology Research and Development Program of China(No.2013AA050302);the Fundamental Research Funds for the Central Universities(No.65010341); We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor d...; 关键词：textured surface ZnO films p-type c-Si substrates MOCVD technique AFORS-HET software solar cells

The algorithm for the piezoresistance coefficients of p-type polysilicon: 《Journal of Semiconductors》2016年第8期10-14,共5页王健揣荣岩; supported by the National Natural Science Foundation of China(No.61372019); In order to improve the piezoresistance theory of polysilicon, based on the tunneling piezoresistance model, using the mechanisms of approximate valence band equation and shifts of the hole transfer and hole con- duct...; 关键词：piezoresistance coefficient polysilicon nanofilm tunneling piezoresistance model p-type polysilicon

Electronic structure and optical property of p-type Zn-doped SnO_2 with Sn vacancy被引量：2: 《Journal of Semiconductors》2016年第2期39-44,共6页孙桂鹏闫金良牛培江孟德兰; supported by the National Natural Science Foundation of China(No.10974077);the Innovation Project of Shandong Graduate Education,China(No.SDYY13093); The electronic structures and optical properties of intrinsic SnO2, Zn-doped SnO2, SnO2 with Sn va- cancy （Vsn） and Zn-doped SnO2 with Sn vacancy are explored by using first-principles calculations. Zn-doped SnO2 is...; 关键词：Sn02 crystal zinc doping tin vacancy electronic structure optical property

Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC: 《Journal of Semiconductors》2015年第12期53-61,共9页韩超张玉明宋庆文汤晓燕郭辉张义门杨霏钮应喜; supported by the Key Specific Projects of Ministry of Education of China(No.625010101);the Specific Project of the Core Devices(No.2013ZX01001001-004);the Science Project of State Grid(No.SGRI-WD-71-14-004); Ti/Al/Au ohmic contacts to p-type 4H-SiC in terms of a different annealing time and Ti composition are reported. At 1050 ~C, proper increase in annealing time plays a critical role in the Schottky to ohmic contact con...; 关键词：4H-SIC P-TYPE ohmic contact TITANIUM ALUMINUM GOLD

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