云南高校图书馆联盟文献共享服务平台- PHOTODIODE

PHOTODIODE: 作品数：104被引量：102H指数：5; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：陈杰金湘亮仇玉林张欣张帅更多>>; 相关机构：中国科学院北京邮电大学中国科学院微电子研究所天津大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

Gate-tunable high-responsivity photodiode based on 2D ambipolar semiconductor: 《Chinese Physics B》2025年第1期189-193,共5页Wentao Yu Long Zhao Yanfei Gao Shiping Gao Yuekun Yang Chen Pan Shi-Jun Liang Bin Cheng; Project supported by the National Natural Science Foundation of China(Grant Nos.62375131,62204119,62122036,and 62304104);the Natural Science Foundation of Jiangsu Province(Grant No.BK20220947);the Funding of NJUST(Grant No.TSXK2022D008)。; Electrically tunable homojunctions based on ambipolar two-dimensional materials have attracted widespread attention in the field of intelligent vision.These devices exhibit inherent switchable positive and negative ph...; 关键词：reconfigurable homojunction in sensor computing ambipolar material

Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga_(2)O_(3) substrate被引量：1: 《Chinese Physics B》2021年第1期483-486,共4页Xu-Long Chu Zeng Liu Yu-Song Zhi Yuan-Yuan Liu Shao-Hui Zhang Chao Wu Ang Gao Pei-Gang Li Dao-You Guo Zhen-Ping Wu Wei-Hua Tang; Project supported by BUPT Excellent Ph.D.Students Foundation(Grant No.CX2020314);the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241);the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT);the Fundamental Research Funds for the Central Universities,China。; We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detector sh...; 关键词：β-Ga_(2)O_(3)substrate Schottky photodiode solar-blind detection

Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node被引量：1: 《Chinese Physics B》2021年第1期593-599,共7页Cui Yang Guo-Liang Peng Wei Mao Xue-Feng Zheng Chong Wang Jin-Cheng Zhang Yue Hao; Project supported by the National Natural Science Foundation of China(Grant No.61574112)。; A novel CMOS image sensor(CIS) pinned photodiode(PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping ...; 关键词：CMOS image sensor charge transfer efficiency high-speed charge transfer pinned photodiode

Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses: 《Chinese Physics B》2019年第9期381-384,共4页Xiaolong Cai Dong Zhou Liang Cheng Fangfang Ren Hong Zhong Rong Zhang Youdou Zheng Hai Lu; Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400902);the Priority Academic Program Development of Jiangsu Higher Education Institutions,China; Four 4H-SiCp-i-n ultraviolet(UV) avalanche photodiode(APD) samples PIN-0.1, PIN-0.35, PIN-0.5, and PIN-1.0 with different intrinsic layer thicknesses(0.1 μm, 0.35 μm, 0.5 μm, and 1.0 μm, respectively) are designed...; 关键词：4H-SIC AVALANCHE PHOTODIODE single photon detection efficiency TUNNELING

Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor被引量：4: 《Chinese Physics B》2018年第10期352-356,共5页Lin-Dong Ma Yu-Dong Li Lin Wen Jie Feng Xiang Zhang Tian-Hui Wang Yu-Long Cai Zhi-Ming Wang Qi Guo; Project supported by the National Natural Science Foundation of China(Grant No.11675259);the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.2016-QNXZ-B-8 and 2016-QNXZ-B-2); A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of...; 关键词：CMOS active pixel sensor dark current quantum efficiency

Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode: 《Chinese Physics B》2016年第11期662-667,共6页朱阁郑福王超孙志斌翟光杰赵清; Project supported by the National Natural Science Foundation of China(Grant Nos.11275024,61274024,and 61474123);the Youth Innovation Promotion Association,China(Grant No.2013105);the Ministry of Science and Technology of China(Grant Nos.2013YQ030595-3 and 2011AA120101); We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage（V（ex）） when operated in 1-GHz sinusoidally gated mode.The single-photon avalanche diod...; 关键词：jitter gated timing photodiode operated quickly likely gating photon cooled

A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure: 《Chinese Physics B》2014年第12期254-262,共9页曹琛张冰吴龙胜李娜王俊峰; Project supported by the National Defense Pre-Research Foundation of China(Grant No.51311050301095); A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping dist...; 关键词：CMOS image sensor quantum efficiency pinned photodiode analytical model

A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method: 《Chinese Physics B》2014年第5期563-567,共5页A.Tataroglu A.A.Hendi R.H.Alorainy F.Yakuphanoglu; A novel aluminum iron oxide （Al/AlFe2O4/p-Si） Schottky photodiode was successfully fabricated via the sol-gel coating process. The microstructure of the spinel ferrite （AlFe2O4） was examined by atomic force micros...; 关键词：spinel ferrite Schottky photodiode I-V characteristics barrier height

Design and fabrication of a high-performance evanescently coupled waveguide photodetector被引量：1: 《Chinese Physics B》2013年第10期614-618,共5页刘少卿杨晓红刘宇李彬韩勤; Project supported by the High Technology Research and Development Program of China (Grant Nos.2012AA012202 and 2013AA031401);the National Basic Research Program of China (Grant No.2012CB933503);the National Natural Science Foundation of China (Grant Nos.61176053,61274069,and 61021003); In this paper, we present the design, fabrication, and measurement of an evanescently coupled waveguide photode- tector operating at 1.55 gm, which mainly comprises a diluted waveguide, a single-mode rib waveguide and...; 关键词：HIGH-PERFORMANCE diluted waveguide evanescent coupling waveguide photodiode

MEH-PPV/Alq_3-based bulk heterojunction photodetector被引量：1: 《Chinese Physics B》2013年第10期192-196,共5页Zubair Ahmad Mahdi Hasan Suhail Issam Ibrahim Muhammad Wissam Khayer Al-Rawi Khaulah Sulaiman Qayyum Zafar Ahmad Sazali Hamzah Zurina Shaameri; Project supported by the Long Term Research Grant Scheme(LRGS),Ministry of Higher Education,Malaysia(Grant No.LR003/2011A); In this paper, we present the effect of varied illumination levels on the electrical properties of the organic blend bulk heterojuction （BHJ） photodiode. To prepare the BHJ blend, poly（2-methoxy-5（2P-ethylhexyloxy...; 关键词：MEH-PPV ALQ3 bulk heterojunction PHOTODIODE

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