A-PLANE

作品数：19被引量：7H指数：1
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相关期刊：《Chinese Physics Letters》《Chinese Optics Letters》《Science China(Technological Sciences)》《Chinese Physics B》更多>>
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Growth of a-Plane InN Film and Its THz Emission
《Chinese Physics Letters》2014年第7期160-163,共4页王光兵 赵国忠 郑显通 王平 陈广 荣新 王新强 
Supported by the National Basic Research Program of China under Grant No 2012CB619300, the National Natural Science Foundation of China under Grant Nos 61225019, 11023003 and 61376060, and the National High-Technology Research and Devel- opment Program of China under Grant No 2011AA050514.
We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a CaN buffer layer, which has been confir...
Strain Distributions in Non-Polar a-Plane In_(x)Ga_(1−x)N Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction
《Chinese Physics Letters》2013年第9期169-172,共4页ZHAO Gui-Juan YANG Shao-Yan LIU Gui-Peng LIU Chang-Bo SANG Ling GU Cheng-Yan LIU Xiang-Lin WEI Hong-Yuan ZHU Qin-Sheng WANG Zhan-Guo 
Supported by the National Natural Science Foundation of China under Grant Nos 91233111,61274041,11275228,61006004 and 61076001;the National Basic Research Program of China(No 2012CB619305);the National High-Technology R&D Program of China(No 2011AA03A101).
By using x-ray diffraction analysis,we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In_(x)𝑦Ga_(1−x)𝑦N thin films grown on r-sapphire substrates by metalor...
关键词：technique deposition. PLANE 
Growth and Characterization of an a-Plane In_(x)Ga_(1−x)N on a r-Plane Sapphire
《Chinese Physics Letters》2012年第11期178-182,共5页ZHAO Gui-Juan LI Zhi-Wei WEI Hong-Yuan LIU Gui-Peng LIU Xiang-Lin YANG Shao-Yan ZHU Qin-Sheng WANG Zhan-Guo 
Supported by the National Natural Science Foundation of China under Grant Nos 60976008,61006004,61076001,10979507;the Special Funds for Major State Basic Research Project(973 program)of China(No A000091109-05);the National High-Technology R&D Program of China(No 2011AA03A101).
The non-polar a-plane(1120)In_(x)Ga_(1−x)N alloys with different indium compositions(0.074≤x≤0.555)were grown on r-plane(1012)sapphire substrates by metalorganic chemical vapor deposition,and the indium compositions...
关键词：ALLOYS PLANE 
In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition
《Chinese Physics Letters》2012年第10期217-220,共4页DING Yu LIU Bin TAO Tao LI Yi ZHANG Zhao ZHANG Rong XIE Zi-Li ZHAO Hong GU Shu-Lin LV Peng ZHU Shi-Ning ZHENG You-Dou 
Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619304;the National High-Technology Research and Development Program of China under Grant No 2011AA03A103;the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004,61176063);the Natural Science Foundation of Jiangsu Province(BK2008019,BK2011010,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics.
The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence(PL),optical transmission and Raman...
关键词：SCATTERING VAPOUR ANISOTROPIC 
Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization
《Chinese Physics B》2011年第5期409-412,共4页张金风 许晟瑞 张进成 郝跃 
Project supported by the National Key Science & Technology Major Project of the Ministry of Science and Technology of China(Grant No. 2008ZX01002-002);the Major Program and the Key Program of the National Natural Science Foundation of China(Grant Nos. 60890191 and 60736033)
Nonpolar a-plane GaN epilayers are grown on several r-plane sapphire substrates by metal organic chemical vapour deposition using different nucleation layers： （A） a CaN nucleation layer deposited at low temperature...
关键词：a-plane GaN metal organic chemical vapour deposition A1N/A1GaN superlattice PHOTOLUMINESCENCE 
Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition
《Chinese Physics B》2011年第1期639-642,共4页方浩 龙浩 桑立雯 齐胜利 熊畅 于彤军 杨志坚 张国义 
Project supported by the National Natural Science Foundation of China(Grant Nos.60676032,60776041,60976009 and U0834001);the National Basic Research program of China(Grant No.2007CB307004)
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the c...
关键词：metal-organic chemical deposition III-NITRIDES NONPOLAR light emitting diodes 
Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films
《Chinese Physics B》2010年第1期520-523,共4页赵璐冰 于彤军 吴洁君 杨志坚 张国义 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028);the National Basic Research Program of China (Grant No. 2007CB307004);the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018)
Non-polar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane Ga...
关键词：non-polar GaN V/III ratio ANISOTROPY migration length 
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