云南高校图书馆联盟文献共享服务平台- ULTRA-THIN

检索规则说明：AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：范例一： (K=图书馆学 OR K=情报学) AND A=范并思　　　　范例二：J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual

全部期刊核心期刊 EI来源期刊 SCI来源期刊 CA来源期刊 CSCD来源期刊 CSSCI来源期刊

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices被引量：1: 《Chinese Physics Letters》2022年第5期100-107,共8页Dong Pan Huading Song Shan Zhang Lei Liu Lianjun Wen Dunyuan Liao Ran Zhuo Zhichuan Wang Zitong Zhang Shuai Yang Jianghua Ying Wentao Miao Runan Shang Hao Zhang Jianhua Zhao; supported by the National Natural Science Foundation of China(Grant Nos.92065106,61974138,12104053,and 11704364);the Beijing Natural Science Foundation(Grant No.1192017);Tsinghua University Initiative Scientifc Research Program;the support from Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant No.Y2021043);China Postdoctoral Science Foundation(Grant Nos.2020M670173 and 2020T130058)。; We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(~30 nm)is much thinner than before(~100 nm).The ultra-thin InAs nanowires ...; 关键词：NANOWIRES interface REGIME

Visualizing the in-Gap States in Domain Boundaries of Ultra-Thin Topological Insulator Films: 《Chinese Physics Letters》2021年第7期106-109,共4页Jun Zhang Junbo Cheng Shuaihua Ji Yeping Jiang; Supported by the National Natural Science Foundation of China(Grant Nos.61804056 and 92065102);the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics,Tsinghua University.; Ultra-thin topological insulators provide a platform for realizing many exotic phenomena such as the quantum spin Hall effect,and quantum anomalous Hall effect.These effects or states are characterized by quantized tr...; 关键词：SPECTROSCOPY TEMPERATURE PROPERTIES

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors被引量：1: 《Chinese Physics Letters》2017年第4期87-91,共5页Shi-Li Yan Zhi-Jian Xie Jian-Hao Chen Takashi Taniguchi Kenji Watanabe; Supported by the National Basic Research Program of China under Grant Nos 2013CB921900 and 2014CB920900;the National Natural Science Foundation of China under Grant No 11374021)(S.Yan,Z.Xie,J.-H,Chen);support from the Elemental Strategy Initiative conducted by the MEXT,Japan;a Grant-in-Aid for Scientific Research on Innovative Areas"Science of Atomic Layers"from JSPS; The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is o...; 关键词：Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors FET BP

Durability of Ultra-Thin Silver Films and Silver-Gold Alloy Films under UV Irradiation: 《Chinese Physics Letters》2016年第10期124-127,共4页周明蔡渊李耀鹏刘定权; Supported by the National Natural Science Foundation of China under Grant No 61308070; Silver films fag） and silver-gold films （Ag-A u） with thickness -15 nm are coated on Bk 7 glasses through thermal evaporation. After doping gold of 5.2%, the grain size of the Ag film reduces from 13.6nm to 9.1 nm,...; 关键词：AG in of NM UV

Polymer-Sandwich Ultra-Thin Silicon(100) Platform for Flexible Electronics: 《Chinese Physics Letters》2016年第6期86-89,共4页张永华 S.Karthikeyan 张健; Supported by the State Scholarship Fund of China;the Open Research Fund of Shanghai Key Laboratory of Multidimensional Information Processing of East China Normal University; As a potential flexible substrate for flexible electronics, a polymer-sandwiched ultra-thin silicon platform is stud- ied. SU-8 photoresist coated on the silicon membrane improves its flexibility as shown by an ANSYS ...; 关键词：of for Platform for Flexible Electronics PECVD is in

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor被引量：1: 《Chinese Physics Letters》2015年第11期127-130,共4页唐晓雨卢继武张睿吴枉然刘畅施毅黄子乾孔月婵赵毅; Supported by the National Program on Key Basic Research Project of China under Grant No 2011CBA00607;the National Natural Science Foundation of China under Grant Nos 61106089 and 61376097;the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001; Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nm...; 关键词：As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor OI Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In Ga

Growth of Atomically Flat Ultra-Thin Ag Films on Si（111） by Introducing a √3×√3-Ga Buffer Layer: 《Chinese Physics Letters》2014年第12期143-146,共4页何杰辉姜利群邱静岚陈岚吴克辉; Growth of high-quality ultra-thin Ag film is of great interest from both scientific and technological viewpoints. First, ultra-thin metal fihns are model systems utilized to investigate quantum size effects （QSE）. W...

Low Frequency Ultra-Thin Compact Metamaterial Absorber Comprising Split-Ring Resonators: 《Chinese Physics Letters》2014年第6期211-214,共4页林宝勤达新宇赵尚弘蒙文李凡郑秋容王布宏; Supported by the National Natural Science Foundation of China under Grant Nos 61271250, 61172148, and 61302153.; We present a design of a low frequency ultra-thin compact and polarization-insensitive metamaterial absorber （MA）. The designed MA is a two-layer structure, a periodic array of novel split-ring resonators （SRRs）, ...

Fabrication and Characteristics of AIInN/A1N/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric: 《Chinese Physics Letters》2010年第12期199-202,共4页毛维张进成薛军帅郝跃马晓华王冲刘红侠许晟瑞杨林安毕志伟梁晓祯张金风匡贤伟; Supported by the Dandamental Research Funds for the Central Universities under Grant No JY10000925002, the National Key Science and Technology Special Project under Grant No 2008ZX01002-002, and the National Natural Science Foundation of China under Grant Nos 60736033, 60976068 and 61076097.; Al0.85In0.15N//AlN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） employing a 3-nm ultra-thin atomic-layer deposited （ALD） Al2O3 gate dielectric layer are reported. Devices with 0.6μ...

Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate被引量：5: 《Chinese Physics Letters》2009年第11期156-159,共4页刘旭焱刘卫丽马小波陈超宋志棠林成鲁; Ultra-thin and near-fully relaxed SiCe substrate is fabricated using a modified Ce condensation technique, and then a 25-nm-thiek biaxially tensile strained-Si with a low rms roughness is epitaxially deposited on a Si...

ULTRA-THIN