SEMI-INSULATING

作品数：34被引量：18H指数：2
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相关作者：赵有文林兰英王超张玉明张义门更多>>
相关机构：中国科学院河北半导体研究所香港大学西安电子科技大学更多>>
相关期刊：《Chinese Physics Letters》《Journal of Energy and Power Engineering》《Science Bulletin》《Science China(Information Sciences)》更多>>
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Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers
《Acta Metallurgica Sinica(English Letters)》2014年第6期1083-1087,共5页Xianglong Yang Kun Yang Yingxin Cui Yan Peng Xiufang Chen Xuejian Xie Xiaobo Hu 
financially supported by National Basic Research Program of China (No. 2011CB301904);the Natural Science Foundation of China (Nos. 11134006 and 61327808)
The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-i...
关键词：SiC Anomalous resistivity Polytype inclusion Activation energy Compensation mechanism 
Effect of the Si-doped In_(0.49)Ga_(0.51)P barrier layer on the device performance of In_(0.4)Ga_(0.6)As MOSFETs grown on semi-insulating GaAs substrates被引量：1
《Chinese Physics B》2013年第7期463-466,共4页常虎东 孙兵 薛百清 刘桂明 赵威 王盛凯 刘洪刚 
the National Basic Research Program of China(Grant Nos.2011CBA00605 and 2010CB327501);the National Natural Science Foundation of China(Grant No.61106095);the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2011ZX02708-003)
In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the firs...
关键词：metal–oxide–semiconductor field-effect transistor INGAAS INGAP Al2O3 
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN
《Chinese Physics Letters》2011年第3期184-187,共4页HOU Qi-Feng WANG Xiao-Liang XIAO Hong-Ling WANG Cui-Mei YANG Cui-Bai YIN Hai-Bo LI Jin-Min WANG Zhan-Guo 
Supported by the Knowledge Innovation Project of Chinese Academy of Sciences(Nos YYYJ-0701-02,ISCAS2008T01,ISCAS2009L01 and ISCAS2009L02);the National Natural Sciences Foundation of China(Nos 60890193 and 60906006);and the National Basic Research Program of China(Nos 2006CB604905 and 2010CB327503).
Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence.Intense yellow and blue luminescence bands are observed in semi-insulating GaN,while in n-GaN the yell...
关键词：GAN LUMINESCENCE YELLOW 
Vanadium-Doped Semi-Insulating 6H-SiC for Microwave Power Device Applications被引量：1
《Journal of Materials Science & Technology》2009年第1期102-104,共3页Liana Ning Zhihong Feng Yingmin Wang Kai Zhang Zhen Feng 
supported by the National Natural Sci-ence Foundation of China under grant No. 50472068 and No. 50721002;the National "863" High Technology Re-search and Development Program of China under grant No. 2006AA03A145 and No. 2007AA03Z405;the Na-tional Basic Research Program of China under grant No.2009CB930503;the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China under grant No. 707039
Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1 × 10^6 Qcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry （SIMS） was employed to determine the concent...
关键词：Silicon Carbide SEMI-INSULATING Vanadium-doped AlGaN/GaN HEMT 
Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC
《Journal of Semiconductors》2007年第11期1701-1705,共5页王超 张义门 张玉明 郭辉 徐大庆 王悦湖 
国家自然科学基金(批准号:60376001);国家重点基础研究发展规划(批准号:2002CB311904);国防基础研究规划(批准号:51327020202)资助项目~~
The diffusion behavior of vanadium （V） implanted in SiC is investigated by secondary ion mass spec- trometry. Significant redistribution, especially out-diffusion of vanadium towards the sample surface, is not ob- s...
关键词：ohmic contact semi-insulating SiC V ion implantation diffusion carbon vacancies 
Growth of Semi-Insulating GaN by Using Two-Step AIN Buffer Layer被引量：2
《Chinese Physics Letters》2007年第6期1641-1644,共4页周忠堂 郭丽伟 邢志刚 丁国建 张洁 彭铭曾 贾海强 陈弘 周均铭 
Supported by the National Natural Science Foundation of China under Grant Nos 10474126 and 10574148, the National High Technology and Development Programme of China under Grant Nos 2006AA03A107 and 2006AA03A106, and the National Key Basic Research Program of China under Grant No 2002CB311900.
Semi-insulating GaN is grown by using a two-step A1N buffer layer by metalorganic chemical vapour deposition. The sheet resistance of as-grown semi-insulating GaN is dramatically increased to 10^13 Ω/sq by using two-...
Electrical and optical characteristics of vanadium in 4H-SiC被引量：2
《Chinese Physics B》2007年第5期1417-1421,共5页王超 张义门 张玉明 
Project supported by the National Natural Science Foundation of China （Grant No 60376001）, the National Basic Research Program of China （Grant No 2002CB311904） and the National Defense Basic Research Program of China （Grant No 51327020202）. Acknowledgments The authors would like to thank Li Cheng-Ji and Ye Xiao-Ling of Institute of Semiconductors, Chinese Academy of Sciences for measuring the temperaturedependent resistivity and absorption, respectively, and they also thank Ma Nong-Nong at the Centre of Electronic Materials Characterization of Tianjin Electronic Materials Research Institute for performing SIMS measurements.
A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650 ℃. The resistivity at room temperat...
关键词：semi-insulating 4H-SiC vanadium ion implantation ANNEALING activation energy 
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