SEMI-INSULATING

作品数：34被引量：18H指数：2
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相关领域：电子电信更多>>
相关作者：赵有文林兰英王超张玉明张义门更多>>
相关机构：中国科学院河北半导体研究所香港大学西安电子科技大学更多>>
相关期刊：《Chinese Physics Letters》《Journal of Energy and Power Engineering》《Science Bulletin》《Science China(Information Sciences)》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划天津市自然科学基金中国博士后科学基金更多>>
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High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD
《Chinese Physics Letters》2015年第3期121-123,共3页孔祥挺 周旭亮 李士颜 乔丽君 刘洪刚 王圩 潘教青 
We demonstrate high-performance In0.23 Ga0.77 As channel metal-oxide-semiconductor field-effect transistors （ MOS- FETs） with high on-current to off-current （Ion/Ioff） ratio grown on semi-insulating GaAs wafers by...
关键词：As Channel MOSFETs with High Current Ratio I MOSFET Ga Grown on Semi-insulating GaAs Substrates by MOCVD off 
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN
《Chinese Physics Letters》2011年第3期184-187,共4页HOU Qi-Feng WANG Xiao-Liang XIAO Hong-Ling WANG Cui-Mei YANG Cui-Bai YIN Hai-Bo LI Jin-Min WANG Zhan-Guo 
Supported by the Knowledge Innovation Project of Chinese Academy of Sciences(Nos YYYJ-0701-02,ISCAS2008T01,ISCAS2009L01 and ISCAS2009L02);the National Natural Sciences Foundation of China(Nos 60890193 and 60906006);and the National Basic Research Program of China(Nos 2006CB604905 and 2010CB327503).
Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence.Intense yellow and blue luminescence bands are observed in semi-insulating GaN,while in n-GaN the yell...
关键词：GAN LUMINESCENCE YELLOW 
Growth of Semi-Insulating GaN by Using Two-Step AIN Buffer Layer被引量：2
《Chinese Physics Letters》2007年第6期1641-1644,共4页周忠堂 郭丽伟 邢志刚 丁国建 张洁 彭铭曾 贾海强 陈弘 周均铭 
Supported by the National Natural Science Foundation of China under Grant Nos 10474126 and 10574148, the National High Technology and Development Programme of China under Grant Nos 2006AA03A107 and 2006AA03A106, and the National Key Basic Research Program of China under Grant No 2002CB311900.
Semi-insulating GaN is grown by using a two-step A1N buffer layer by metalorganic chemical vapour deposition. The sheet resistance of as-grown semi-insulating GaN is dramatically increased to 10^13 Ω/sq by using two-...
Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time
《Chinese Physics Letters》2007年第6期1645-1648,共4页周忠堂 邢志刚 郭丽伟 陈弘 周均铭 
Supported by the Knowledge Innovation Programme of Chinese Academy of Sciences, the National Natural Science Foundation of China under Grant Nos 10474126 and 10574148, and the National Key Basic Research Programme of China under Grant No 2002CB311900.
Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL ca...
关键词：UNINTENTIONALLY DOPED GAN FILMS DISLOCATIONS BUFFER 
Identification of Defects in Undoped Semi-insulating InP by Positron Lifetime
《Chinese Physics Letters》2001年第4期574-576,共3页MAO Wei-Dong WANG Shao-Jie WANG Zhu SUN Nie-Feng SUN Tong-Nian ZHAO You-Wen 
Supported by the National Natural Science Foundation of China under Grant No.69576020.
Positron lifetime measurements,carried out over the temperature range of 10-300 K,have been used to investigate defects in two undoped semi-insulating InP samples.The positron lifetime spectra were analysed by both PA...
关键词：LIFETIME POSITRON unchanged 
Two-Wave Mixing in Resonant Photorefractive GaAs/AlGaAs Semi-insulating Multiple Quantum Wells
《Chinese Physics Letters》1995年第6期358-361,共4页HU Chengyong ZHANG Zhiguo KANG Jing FENG Wei HU Qiang HUANG Qi ZHOU Junming 
Supported by the National Natural Science Foundation of China under the No.69478001.
We have observed the two-wave mixing of the photorefractive GaAs/AIGaAs semiinsulating multiple quantum wells fabricated by film lift-off approach and proton implanting technique.Under the non-optimized condition,we h...
关键词：GAAS/ALGAAS TECHNIQUE PHOTOREFRACTIVE 
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