ETCH

作品数：54被引量：55H指数：4
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Energy calibration of a CR-39 nuclear-track detector irradiated by charged particles被引量：1
《Nuclear Science and Techniques》2019年第6期1-9,共9页Yue Zhang Hong-Wei Wang Yu-Gang Ma Long-Xiang Liu Xi-Guang Cao Gong-Tao Fan Guo-Qiang Zhang De-Qing Fang 
supported in part by the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB160203);the National Natural Science Foundation of China(Nos.11875311,11421505,and 11475245)
Charged particle diagnosis is an important aspect of laser–plasma experiments conducted at super-intense laser facilities. In recent years, Columbia Resin #39 (CR- 39) detectors have been widely employed for detectin...
关键词：CR-39 detector Energy calibration BULK ETCH rate ETCHING temperature 
Plasma density measurement and downstream etching of silicon and silicon oxide in Ar/NF3 mixture remote plasma source被引量：2
《Plasma Science and Technology》2019年第6期52-57,共6页H J YEOM D H CHOI Y S LEE J H KIM D J SEONG S J YOU H C LEE 
In this study,plasma density measurements were performed near the plume region of the remote plasma source (RPS) in Ar/NF3 gas mixtures using a microwave cutoff probe.The measured plasma density is in the range of 101...
关键词：REMOTE plasma source electron density CUTOFF probe DOWNSTREAM ETCH 
Parallel boron nitride nanoribbons and etch tracks formed through catalytic etching
《Nano Research》2018年第9期4874-4882,共9页Armin Ansary Mohsen Nasseri Mathias J. Boland Douglas R. Strachan 
One-dimensional （1D） catalytic etching was investigated in few-layer hexagonal boron nitride （hBN） films. Etching of hBN was shown to share a number of similarities with that of graphitic films. As in graphitic fi...
关键词：hexagonal（hBN） one-dimensional catalytic etching HYDROGENATION etch tracks NANORIBBONS 
Etching Effect on CMP of Different GaN Layers
《稀有金属材料与工程》2011年第S3期276-280,共5页Siche Dietmar Rost Hans-Joachim Schulz Tobias Albrecht Martin 
National Natural Science Foundation of China (50472068, 50721002);National "863" High Technology Research and Development Program of China (2006AA03A145, 2007AA03Z405);National Basic Research Program of China (2009CB930503);The Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (707039)
Chemical mechanical polishing (CMP) was used to etch various GaN materials, such as GaN layers on sapphire and silicon carbide substrates grown by metal-organic chemical vapor deposition and thick GaN layers grown by ...
关键词：SURFACE ETCH PITS CMP GAN 
Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl_2/BCl_3-Based Inductively Coupled Plasma被引量：5
《Plasma Science and Technology》2011年第2期223-229,共7页D.S.RAWAL B.K.SEHGAL R.MURALIDHARAN H.K.MALIK 
A study of Cl2/BCl3-based inductively coupled plasma （ICP） was conducted using thick photoresist mask for anisotropic etching of 50μm diameter holes in a GaAs wafer at a relatively high average etching rate for etc...
关键词：GAAS inductively coupled plasma ETCHING ion energy etch yield 
Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions被引量：3
《Journal of Semiconductors》2009年第8期47-51,共5页陈晓锋 陈诺夫 吴金良 张秀兰 柴春林 俞育德 
supported by the Space Agency of China and the Chinese Academy of Sciences
A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemic...
关键词：chemical etching etch pit defect growth striations CONVECTION 
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