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ETCH: 作品数：54被引量：55H指数：4; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：范学丽章志兴徐斌刘钧松丁娟更多>>; 相关机构：上海富乐德智能科技发展有限公司北京京东方光电科技有限公司深圳市华星光电技术有限公司上海华力集成电路制造有限公司更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划上海市青年科技启明星计划国家高技术研究发展计划更多>>

Effect of internal structure of a batch-processing wet-etch reactor on fluid flow and heat transfer: 《Chinese Journal of Chemical Engineering》2024年第8期177-186,共10页Qinghang Deng Junqi Weng Lei Zhou Guanghua Ye Xinggui Zhou; financially supported by the National Natural Science Foundation of China(22378115 and 22078090);the Shanghai Rising-Star Program(21QA1402000);the Natural Science Foundation of Shanghai(21ZR1418100);the Fundamental Research Funds for the Central Universities(JKA01231803)。; Batch-processing wet-etch reactors are the key equipment widely used in chip fabrication,and their performance is largely affected by the internal structure.This work develops a three-dimensional computational fluid d...; 关键词：Wet-etch reactor Batch-processing Computational fluid dynamics Reaction heat Internal structure Etch uniformity

Removal of GaN film over AlGaN with inductively coupled BCl_(3)/Ar atomic layer etch: 《Chinese Physics B》2022年第1期613-617,共5页Jia-Le Tang Chao Liu; the National Foreign Experts Bureau High-end Foreign Experts Project,China(Grant No.G20190114003);the Key Research and Development Program of Jiangsu Province,China(Grant No.BE2018063);the Natural Science Research Projects of Colleges and Universities in Jiangsu Province,China(Grant No.19KJD140002);the Scientific Research Program for Doctoral Teachers of JSNU,China(Grant No.9212218113).; Atomic layer etching(ALE)of thin film GaN(0001)is reported in detail using sequential surface modification by BCl_(3) adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a reactive...; 关键词：atomic layer etch GaN high electron mobility transistor

Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments被引量：1: 《Chinese Physics B》2020年第10期459-463,共5页Si-Qi Jing Xiao-Hua Ma Jie-Jie Zhu Xin-Chuang Zhang Si-Yu Liu Qing Zhu Yue Hao; Project supported by the National Natural Science Foundation of China (Grant Nos. 61704124, 11690042, and 61634005).; Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility transistors (MOS-HEMTs) with post-etch surface treatment was studied in this paper. Diffusion-controlled interfa...; 关键词：AlGaN/GaN MOS-HEMTs interface traps border traps photo-assisted C-V measurement

Contact etch process optimization for RF process wafer edge yield improvement: 《Journal of Semiconductors》2019年第12期97-100,共4页Zhangli Liu Bingkui He Fei Meng Qiang Bao Yuhong Sun Shaojun Sun Guangwei Zhou Xiuliang Cao Haiwei Xin; supported by Shanghai Rising-Star Program (B type) (No. 18QB1401900); Radio-frequency(RF)process products suffer from a wafer edge low yield issue,which is induced by contact opening.A failure mechanism has been proposed that is based on the characteristics of a wafer edge film stack.Th...; 关键词：bottom anti-reflect coating break through wafer edge PLANARIZATION

Nitridation-Etch of Silicon Oxide in Fluorocarbon/Nitrogen Plasma:A Computational Study: 《Journal of Microelectronic Manufacturing》2019年第1期19-26,共8页Du Zhang Yu-Hao Tsai Hojin Kim Mingmei Wang; The continually increasing number of silicon oxide(SiO2)and nitride(Si3N4)layers in 3D-NAND offers both motivations and challenges for developing all-in-one plasma etch solutions for etching SiO2 and Si3N4 at a select...; 关键词：3D-NAND oxide NITRIDE OXYNITRIDE plasma ETCH molecular dynamics quantum chemistry

TFT-LCD制造工艺中金属或金属复合膜层坡度角的研究被引量：2: 《液晶与显示》2018年第3期208-212,共5页范学丽靖瑞宽王晏酩靳腾董建杰许永昌徐斌章志兴高矿; 在薄膜晶体管液晶显示器(TFT-LCD)面板制程中,Gate层(栅极)电路和SD层(源极)电路根据产品电阻等要求可以使用纯金属膜层,如钼、铜等金属膜层,也可以使用金属复合膜层,如铝钼、铝钕钼、钼铝钼等金属复合膜层。当使用不同金属或金属复合...; 关键词：坡度角 ETCH RATE 膜层刻蚀

Silicon Nitride Etch via Oxidation Reaction in Fluorocarbon/Oxygen Plasma:A First-Principle Study被引量：1: 《Journal of Microelectronic Manufacturing》2018年第1期2-10,共9页Yu-Hao Tsai Du Zhang Mingmei Wang; Conducting all-in-one etch process for 3D-NAND fabrication requires close etch rate(E/R)for SiO2 and Si3N4;however,to attain comparable and high etch rate for both materials is challenging.In this work,we performed fi...; 关键词：3D-NAND oxide NITRIDE OXYNITRIDE plasma ETCH FIRST-PRINCIPLE

Correlation ofⅢ/Ⅴsemiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance: 《Plasma Science and Technology》2017年第12期96-110,共15页Gerhard FRANZ Ralf MEYER Markus-Christian AMANN; the support of Deutsche Forschungsgemeinschaft,DFG#FR 1553/6-1; Reactive ion etching is the interaction of reactive plasmas with surfaces. To obtain a detailed understanding of this process, significant properties of reactive composite low-pressure plasmas driven by electron cyclo...; 关键词：electron cyclotron resonance high-density plasma Langmuir probe EEDF radial plasma density radial uniformity

SU8 etch mask for patterning PDMS and its application to flexible fluidic microactuators被引量：4: 《Microsystems & Nanoengineering》2016年第1期101-105,共5页Benjamin Gorissen Chris Van Hoof Dominiek Reynaerts Michael De Volder; BG is a Doctoral Fellow of the Research Foundation—Flanders(F.W.O.),Belgium.MDV acknowledges support from the ERC starting grant HIENA(no.337739).; Over the past few decades,polydimethylsiloxane(PDMS)has become the material of choice for a variety of microsystem applications,including microfluidics,imprint lithography,and soft microrobotics.For most of these appl...; 关键词：PDMS lithography SU8 etch mask MICROACTUATOR bending actuator fluidic actuator

Etch characteristics of Si_(1-x)Ge_x films in HNO_3:H_2O:HF被引量：1: 《Science China(Technological Sciences)》2011年第10期2802-2807,共6页XUE ZhongYing WEI Xing LIU LinJie CHEN Da ZHANG Bo ZHANG Miao WANG Xi; supported by the National Natural Science Foundation of China (Grant No. 61006088);the National Basic Research Program of China (973 Program) (Grant No. 2010CB832906);the Natural Sci-ence Foundation of Shanghai (Grant No. 10ZR1436100); The etch characteristics of Si_1-xGex films in HNO3:H2O:HF were examined. The etch rate ratio (etch selectivity) between Si_1-xGex and Si escalated with the growth of HNO3 concentration at low concentration level, and...; 关键词：Si_（1-x）Ge_x etch rate SELECTIVITY HNO_3 HF

ETCH