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INSULATOR: 作品数：384被引量：419H指数：9; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：潘海林袁望治阮建中程金科何家康更多>>; 相关机构：中国科学院华东师范大学清华大学中国科学技术大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>

Magnetic quantum oscillation in a monolayer insulator: 《Journal of Semiconductors》2021年第6期8-10,共3页Xin Lu; The Shubnikov-de Haas(Sd H)oscillation,as evidenced by the oscillating resistivity as a function of magnetic field at sufficiently low temperature,is not uncommon in metals,semimetals and narrow gap semiconductors at ...; 关键词：OSCILLATION QUANTUM OCCUPY

Photonic devices based on thin-film lithium niobate on insulator被引量：2: 《Journal of Semiconductors》2021年第4期43-52,共10页Shuai Yuan Changran Hu An Pan Yuedi Ding Xuanhao Wang Zhicheng Qu Junjie Wei Yuheng Liu Cheng Zeng† Jinsong Xia; the National Key Research and Development Program of China(2019YFB2203800);the National Natural Science Foundation of China under Grant No.61835008,61905079,and 61905084.; Lithium niobate on insulator(LNOI)is rising as one of the most promising platforms for integrated photonics due to the high-index-contrast and excellent material properties of lithium niobate,such as wideband transpar...; 关键词：thin-film lithium niobate MODULATOR PPLN edge coupler

Growth of large-scale two-dimensional insulator Na2Ta4O11 through chemical vapor deposition: 《Journal of Semiconductors》2020年第7期23-27,共5页Yuanyuan Jin Huimin Li Song Liu; financial support from the National Natural Science Foundation of China(Nos.21975067,21705036);Natural Science Foundation of Hunan Province,China(No.2018JJ3035)。; The insulator Na2Ta4O11 has been considered as a potential photocatalyst.However,little attention has been given to the synthesis of Na2Ta4O11 nanoparticles,let alone the growth of two-dimensional(2D)layered Na2Ta4O11...; 关键词：Na2Ta4O11 two-dimensional materials chemical vapor deposition INSULATOR

An improved SOI trench LDMOST with double vertical high-k insulator pillars: 《Journal of Semiconductors》2018年第9期61-66,共6页Huan Li Haimeng Huang Xingbi Chen; supported by the National Natural Science Foundation of China(Nos.51237001,51607026);the Fundamental Research Funds for the Central Universities(No.ZYGX2016J048); An SOI trench LDMOST（TLDMOST）with ultra-low specific on-resistanceis proposed.It features double vertical high-k insulator pillars（Hk1 and Hk2）in the oxide trench,which are connected to the source electrode and dr...; 关键词：breakdown voltage HIGH-K specific on-resistance trench LDMOST

Research progress of Ge on insulator grown by rapid melting growth: 《Journal of Semiconductors》2018年第6期66-75,共10页Zhi Liu Juanjuan Wen Chuanbo Li Chunlai Xue Buwen Cheng; Project supported in part by the National Key Research and Development Program of China(No.2017YFA0206404);the National Natural Science Foundation of China(Nos.61435013,61534005,61534004,61604146); Ge is an attractive material for Si-based microelectronics and photonics due to its high carries mobility, pseudo direct bandgap structure, and the compatibility with complementary metal oxide semiconductor （CMOS） p...; 关键词：rapid melting growth Ge on insulator MOSFET PHOTODETECTORS

Fabrication and modeling of multi-layer metal–insulator-metal capacitors: 《Journal of Semiconductors》2017年第12期32-36,共5页R Karthik A Akshaykranth; Project supported by the Science and Engineering Research Board(No.ECR/2016/001156); This paper presents the fabrication and modeling for capacitance-voltage characteristics of multi-layer metal-insulator-metal capacitors. It is observed that, due the applied electric field, the effective dielectric c...; 关键词：anodic oxidation dielectric HIGH-K MULTI-LAYER CAPACITANCE-VOLTAGE Maxwell-Wagner capacitor

Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure被引量：2: 《Journal of Semiconductors》2017年第8期44-48,共5页Chenglin Qi Yang Huang Teng Zhan Qinjin Wang Xiaoyan Yi Zhiqiang Liu; supported by the Natural Science Foundation of China(Nos.61306051,61306050);the National High Technology Program of China(No.2014AA032606); GaN-based vertical light-emitting-diodes （V-LEDs） with an improved current injection pattern were fabricated and a novel current injection pattern of LEDs which consists of electrode-insulator-semiconductor （E1S） ...; 关键词：electrode-insulator-semiconductor （EIS） light emitting diodes （LEDs） tunneling mechanism lumi-nous unifomaity current spreading

A superjunction structure using high-k insulator for power devices:theory and optimization: 《Journal of Semiconductors》2016年第6期116-121,共6页黄铭敏陈星弼; supported by the National Natural Science Foundation of China(No.51237001); A superjunction（SJ） structure using a high-k（Hk） insulator is studied and optimized by using an analytic model.Results by using the proposed model match well with that of numerical calculations.Numerical calculati...; 关键词：high-k（Hk） superjunction MOSFET specific on-resistance charge imbalance

Analytical modeling of subthreshold current and subthreshold swing of Gaussiandoped strained-Si-on-insulator MOSFETs被引量：1: 《Journal of Semiconductors》2014年第8期52-59,共8页Gopal Rawat Sanjay Kumar Ekta Goel Mirgender Kumar Sarvesh Dubey S.Jit; This paper presents the analytical modeling of subthreshold current and subthreshold swing of short- channel fully-depleted （FD） strained-Si-on-insulator （SSOI） MOSFETs having vertical Gaussian-like doping pro- fi...; 关键词：strained-Si-on-insulator （SSOI） Poisson＇s solution short-channel-effects

TDDB improvement by optimized processes on metal-insulator-silicon capacitors with atomic layer deposition of Al_2O_3 and multi layers of TiN film structure: 《Journal of Semiconductors》2009年第8期23-27,共5页彭坤王飚肖德元仇圣棻林大成吴萍杨斯元; supported by the National Natural Science Foundation of China (No.50371033);the Specialized Research Fund for the Doctoral Program of Higher Education (No.20040674009);the Semiconductor Manufacturing International Corporation; A metal-insulator-silicon （MIS） capacitor with hemi-spherical grained poly atomic layer deposition （ALD） deposited Al2O3 and multi-layered chemical vapor deposition （CVD） TiN structure is fabricated. The impact ...; 关键词：atomic layer deposition AL2O3 multi-layer TiN early failure metal insulator silicon capacitors TDDB

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