BACK-GATE

作品数：13被引量：4H指数：1
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相关领域：电子电信更多>>
相关作者：宋李梅海潮和毕津顺韩郑生更多>>
相关机构：中国科学院微电子研究所更多>>
相关期刊：《Journal of Semiconductors》《Chinese Physics B》《Chinese Physics Letters》《Graphene》更多>>
相关基金：国家自然科学基金更多>>
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Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation被引量：2
《Journal of Semiconductors》2015年第1期82-85,共4页李蕾蕾 周昕杰 于宗光 封晴 
Project supported by the Major Fund for the National Science and Technology Program,China(No.2009ZX02306-04);the Fund of SOI Research and Development Center(No.20106250XXX)
The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps intro...
关键词：back gate phosphorus ions implantation total-dose radiation SOI MOS back-gate effect 
Stability analysis of a back-gate graphene transistor in air environment被引量：1
《Journal of Semiconductors》2013年第8期61-64,共4页贾昆鹏 杨杰 粟雅娟 聂鹏飞 钟健 梁擎擎 朱慧珑 
supported by the National Sciences and Technology Major Project 02
The stability of a graphene field effect transistor（GFET） is important to its performance optimization, and study of hysteresis behavior can propose useful suggestions for GFET fabrication and optimization.In this w...
关键词：graphene FET stability back-gate hysteresis 
Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFET
《Journal of Semiconductors》2012年第2期36-40,共5页Mei Bo Bi Jinshun Li Duoli Liu Sinan Han Zhengsheng 
supported by the National Natural Science Foundation of China(No.60927006);the Major Projects of National Science and Technology
The performance of a LOCOS-isolated SOI MOSFET heavily depends on its back-gate characteristic, which can be affected by back-gate stress.A large voltage stress was applied to the back gate of SOI devices for at least...
关键词：BACK-GATE threshold voltage STRESS SILICON-ON-INSULATOR 
Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors
《Journal of Semiconductors》2009年第8期60-62,共3页付晓君 张海英 郭常新 徐静波 黎明 
supported by the State Key Development Program for Basic Research of China(No.2002CB311901);the Director Fund of the Institute of Microelectronic of the Chinese Academy of Sciences (No.O8SB034002);the Pre-Research Fund of Weap on Equipment (No.6150105040)
The fabrication and photoelectrical characteristics of suspended ZnO nanowire （NW） field-effect transistors （FETs） are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FET...
关键词：ZnO nanowire BACK-GATE suspended field-effect transistor ultraviolet radiation 
Back-Gate Effect of SOI LDMOSFETs
《Journal of Semiconductors》2008年第11期2148-2152,共5页毕津顺 宋李梅 海潮和 韩郑生 
the National Natural Science Foundation of China(No.60576051);the State Key Development Program for Basic Research of China(No.2006CB3027-01)~~
0.5μm-gate-length lateral double-diffused metal-oxide-semiconductor field-effect transistors （LDMOSFETs） with low barrier body contact （LBBC） and body tied to the source （BTS） were fabricated on silicon-on-insu...
关键词：SOI LDMOSFET back-gate effect 
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