首先介绍了LPIND(Lateral Positive-Intrinsic-Negative Diode)及其在硅基等离子天线方面的应用,并对LPIND进行建模,仿真分析了不同SOI(Silicon On Insulator)埋层材料对LPIND本征区载流子浓度的影响,仿真结果显示,LPIND的自加热效应会...
supported by National Training Programs of Innovation and Entrepreneurship for Undergraduate ( No. 20141049712003);Independent innovation research fund of Wuhan University of Technology ( No. 2014-HY-B1-06)