云南高校图书馆联盟文献共享服务平台- NMOS

NMOS: 作品数：212被引量：190H指数：6; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：张佩杰宋克非吴训威韩郑生张鹤鸣更多>>; 相关机构：西安电子科技大学电子科技大学中国科学院中国科学院微电子研究所更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金中央高校基本科研业务费专项资金国防科技技术预先研究基金国家重点基础研究发展计划更多>>

Design and analysis of a NMOS triggered LIGBT structure for electrostatic discharge protection: 《Journal of Semiconductors》2019年第5期47-50,共4页Li Tian Jianbing Cheng Cairong Zhang Li Shen Lei Wang; supported by National Natural Science Foundation of China(Grant No.61274080); A novel NMOS triggered LIGBT(NTLIGBT) structure is proposed for electrostatic discharge(ESD) protection in this paper. The structure utilizes internal NMOS to trigger SCR-like structure in LIGBT. The trigger voltage i...; 关键词：ESD NMOS triggered LIGBT(NTLIGBT) TRIGGER VOLTAGE HOLDING VOLTAGE ESD design window

A fully on-chip fast-transient NMOS low dropout voltage regulator with quasi floating gate pass element被引量：2: 《Journal of Semiconductors》2017年第4期88-93,共6页Han Wang Chao Gou Kai Luo; This paper presents a fully on-chip NMOS low-dropout regulator（LDO） for portable applications with quasi floating gate pass element and fast transient response.The quasi floating gate structure makes the gate of the...; 关键词：quasi floating gate variable reference circuit transient response low-dropout regulator（LDO）

Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices被引量：4: 《Journal of Semiconductors》2016年第12期45-50,共6页何宝平王祖军盛江坤黄绍艳; Project supported by the National Natural Science Foundation of China(No.11305126); In this paper, total ionizing dose effect of NMOS transistors in advanced CMOS technology are exam- ined. The radiation tests are performed at 60Co sources at the dose rate of 50 rad （Si）/s. The investigation＇s res...; 关键词：total ionizing dose （TID） bulk CMOS shallow trench isolation （STI） oxide trapped charge interfacetraps

A transient-enhanced NMOS low dropout voltage regulator with parallel feedback compensation被引量：2: 《Journal of Semiconductors》2016年第2期131-136,共6页王菡谭林; This paper presents a transient-enhanced NMOS low-dropout regulator （LDO） for portable applications with parallel feedback compensation. The parallel feedback structure adds a dynamic zero to get an adequate phase m...; 关键词：parallel feedback compensation class-AB amplifier fast charging/discharging unit transient re-sponse low-dropout regulator （LDO）

Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation被引量：2: 《Journal of Semiconductors》2015年第1期82-85,共4页李蕾蕾周昕杰于宗光封晴; Project supported by the Major Fund for the National Science and Technology Program,China(No.2009ZX02306-04);the Fund of SOI Research and Development Center(No.20106250XXX); The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps intro...; 关键词：back gate phosphorus ions implantation total-dose radiation SOI MOS back-gate effect

Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation: 《Journal of Semiconductors》2013年第7期175-178,共4页韩锴马雪丽杨红王文武; Project supported by the Important National Science & Technology Specific Projects of China(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,50932001); The effect of Al incorporation on the effective work function（EWF） of TiN metal gate was systematically investigated.Metal-oxide-semiconductor（MOS） capacitors with W/TiN/Al/TiN gate stacks were used to fulfill thi...; 关键词：work function modulation AL MOS capacitor PMA

ESD protection design for the gate oxide of an RF-LDMOS: 《Journal of Semiconductors》2012年第4期59-63,共5页姜一波杜寰曾传滨韩郑生; This paper presents the investigation of integrated electrostatic discharge （ESD） protection design for the gate oxide of an RFLDMOS （radio frequency lateral double diffusion MOS）. Through a comprehensive dis cuss...; 关键词：cascoded NMOS ESD high voltage technology radio frequency lateral double diffusion MOS BVengineering implant

Gate-enclosed NMOS transistors被引量：1: 《Journal of Semiconductors》2011年第8期40-45,共6页范雪李平李威张斌谢小东王刚胡滨翟亚红; In order to quantitatively compare the design cost and performance of various gate styles,NMOS transistors with two-edged,annular and ring gate layouts were designed and fabricated by a commercial 0.35μm CMOS process...; 关键词：RADIATION total ionizing dose gate-enclosed transistor annular NMOS ring NMOS

A total dose radiation model for deep submicron PDSOI NMOS: 《Journal of Semiconductors》2011年第1期33-35,共3页卜建辉毕津顺刘梦新韩郑生; Project supported by the State Key Development Program for Basic Research of China(No.2006CB3027-01); In most of the total dose radiation models, the drift of the threshold voltage and the degradation of the carrier mobility were only studied when the bulk potential is zero. However, the measured data indicate that th...; 关键词：PDSOI NMOS total dose radiation model bulk potential leakage current

Hot carrier effects of SOI NMOS: 《Journal of Semiconductors》2010年第7期36-40,共5页陈建军陈书明梁斌刘必慰刘征滕浙乾; Project supported by the Key Program of the National Natural Science Foundation of China(No.60836004);the Ministry of Education Creative Team Research Project,China.; Hot carrier effect（HCE） is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS.Based on the chemical reaction equation of HCE degradation and a geometry ...; 关键词：annular NMOS two-edged NMOS hot carrier effects reaction diffusion model

NMOS