supported by the National Key Basic Research Program(973 Project)(Grant Nos.2015CB931802 and 2017FYA0205301);the Special Fund for Science and Technology Innovation of Shanghai Jiao Tong University(Grant Nos.YG2017MS70,YG2015MS62,and AF0300179);the Shanghai Municipal Bureau of Economy and Information Technology(Grant No.XC-ZXSJ-02-2016-05);the National Natural Scientific Foundation of China(Grant Nos.8202010801,81921002,81225010,81028009,and 31170961);the 863 Project of China(Grant No.2014AA020700);and the Shanghai Science and Technology Fund(Grant No.13NM1401500)。
Objective:Although great progress has been made in the field of siRNA gene therapy,safe,efficient,and targeted delivery of siRNA are still major challenges in siRNA therapeutics.Methods:We developed an up-conversion n...
This work was financially supported by the National Basic Research Program of China (973 program, No. 2012CB933800) and the National Natural Science Foundation of China (NSFC, No. 91123031).
Large-area deep-silver-nanowell arrays (d-AgNWAs) for plasmonic sensing were manufactured by combining colloidal lithography with metal deposition. In contrast to most previous studies, we shed light on the outstand...
financially supported by the National Natural Science Foundation of China (Nos. 50732001, 10674012, 10874001, and 60877022);the National Basic Research Program of China (No. 2007CB613402)
Optimizing efficiency of organic light-emitting diodes(OLEDs) with a structure of Al/glass/nanometerthick polycrystalline p-Si(NPPS) anode/SiO_2/N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine(NPB)/t...
Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03A121);the National Basic Research Program of China (Grant No. 2006CB604900)
We propose a new method of using conductive glue to agglutinate GaAs based A1CaInP light emitting diodes (LEDs) onto silicon substrate, and the absorbing GaAs layer is subsequently removed by grinding and selective ...
Supported by the National Natural Science Foundation of China under Grant Nos 10874001, 50732001, 10674012 and 60877022, and the National Basic Research Program of China under Grant No 2007CB613402.
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide wit...