P-SI

作品数：177被引量：223H指数：7
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The C–V and G/ω–V Electrical Characteristics of ^(60)Co γ-Ray Irradiated Al/Si_(3)N_(4)/p-Si (MIS) Structures
《Chinese Physics Letters》2013年第7期193-197,共5页S.Zeyrek A.Turan M.M.Bülbül 
The influence of ^(60)Co(γ-ray)irradiation on the electrical characteristics of Al/Si_(3)N_(4)/p-Si(MIS)structures is investigated using capacitance-voltage(C–V)and conductance-voltage(G/ω–V)measurements.The MIS s...
关键词：CAPACITANCE interface attributed 
On the Voltage and Frequency Distribution of Dielectric Properties and ac Electrical Conductivity in Al/SiO_(2)/p-Si (MOS) Capacitors
《Chinese Physics Letters》2013年第1期165-168,共4页Ahmet Kaya Şemsettin Altındal YaseminŞafak Asar Zekayi Sönmez 
An Al/SiO_(2)/p-Si(MOS)capacitor with a thick(826Å)interfacial oxide layer(SiO_(2))which is formed by using the thermal oxidation method is fabricated to investigate both frequency and applied bias voltage dependences...
关键词：POLARIZATION DIELECTRIC INTERFACIAL 
Photoresponse Properties of an n-ZnS/p-Si Heterojunction
《Chinese Physics Letters》2011年第12期239-241,共3页HUANG Jian WANG Lin-Jun TANG Ke XU Run ZHANG Ji-Jun LU Xiong-Gang XIA Yi-Ben 
Supported by the National Natural Science Foundation of China under Grant Nos 60877017,61176072 and 11074162;the Shanghai Postdoctoral Sustentation Fund(11R21413300);the Program for Changjiang Scholars and Innovative Research Team in University(No IRT0739);Shanghai Leading Academic Disciplines(S30107).
An n-ZnS/p-Si heterojunction was fabricated by using the rf magnetron sputtering method. The band gap of the ZnS film is about 3.63 eV. Current-voltage (I–V) characteristics of the ZnS/Si heterojunction are examined ...
关键词：HETEROJUNCTION VISIBLE CHARACTERISTICS 
Rectifying and Photovoltage Properties of ZnO：Al/p-Si Heterojunction被引量：2
《Chinese Physics Letters》2010年第10期194-197,共4页马晶晶 金克新 罗炳成 范飞 邢辉 周超超 陈长乐 
Supported by the NPU Foundation for Fundamental Research under Grant Nos NPU-FFR-JC200821 and JC201048, the National Natural Science Foundation of China under Grant No 50702046, and the NWPU ＂Aoxiang Star＂ project.
An Al-doped ZnO/p-Si heterojunction is fabricated by a laser molecular beam epitaxy technique. The abnormally high ideality factors （n 〉〉 2） of the prepared heterojunction are observed in the interim bias voltage ...
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding被引量：3
《Chinese Physics Letters》2009年第6期151-153,共3页陈挺 洪涛 潘教青 陈娓兮 程远兵 汪洋 马小波 刘卫丽 赵玲娟 冉广照 王圩 秦国刚 
Supported by the National Natural Science Foundation of China under Grant Nos 10874001, 50732001, 10674012 and 60877022, and the National Basic Research Program of China under Grant No 2007CB613402.
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide wit...
关键词：gamma-ray bursts GAMMA-RAYS RELATIVITY 
Electroluminescence Afterglow from Indium Tin Oxide/Si-Rich SiO2/p-Si Structure
《Chinese Physics Letters》2006年第5期1306-1309,共4页王晓欣 张建国 成步文 余金中 王启明 
Supported by the National Natural Science Foundation of China under Grant No 60336010.
Indium tin oxide/Si-rich SiO2/p-Si structured devices are fabricated to study the electroluminescence （EL） of the Si-rich SiO2 （SRO） material. The obvious peaks at～1050nm and ～1260nm in the EL are ascribed to lo...
关键词：SILICON NANOCRYSTALS SI PHOTOLUMINESCENCE EVOLUTION 
Temperature-Dependent Barrier Characteristics of Inhomogeneous In／p-Si （100） Schottky Barrier Diodes
《Chinese Physics Letters》2004年第9期1795-1798,共4页N.Tugluoglu S.Karadeniz S.Acar M.Kasap 
Electroluminescence from Indium Tin Oxide Film/Nanoscale Si Oxide/p-Si Structure
《Chinese Physics Letters》1999年第8期605-607,共3页WANG Yong-qiang ZHAO Tai-ping CUI Xiao-ming MA Zhen-chang ZONG Wan-hua QIN Guo-gang 
the National Natural Science Foundation of China under Grant No.59432022;State Key Laboratory for Integrated Optoelectronics.
After an Si oxide layer of 3nm thickness had been grown by using magnetron sputtering on a p-type Si(100)substrate,an indium tin oxide(ITO)film was deposited onto the Si oxide layer by using electron beam deposition.E...
关键词：FILM TRANSPARENCY layer 
Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO_(2) Film/p-Si Structures
《Chinese Physics Letters》1998年第4期305-306,共2页LI An-ping ZHANG Bo-rui QIAO Yong-ping QIN Guo-gang MA Zhen-chang ZONG Wan-hua 
Supported,by the National Natural Science Foundation of China under Grant No.59432022;the State Key Laboratory for Integrated Optoelectronics。
We have studied the effects ofγ-ray irradiation on electroluminescence(EL)from Au/extra thin Si-rich SiO_(2) film/p-Si Structures.Afterγ-ray irradiation,for the structure with a 600℃ annealed Si-rich SiO_(2) film a...
关键词：annealed FILM STRUCTURES 
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