PINCH-OFF

作品数：8被引量：5H指数：1
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相关领域：电子电信更多>>
相关作者：李思渊胡冬青王永顺刘肃丁航更多>>
相关机构：兰州大学北京大学中国科学技术大学更多>>
相关期刊：《Acta Mechanica Sinica》《Chinese Physics B》《Journal of Semiconductors》《Fluid Dynamics & Materials Processing》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划更多>>
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Pinch-off voltage modeling for CMOS image pixels with a pinned photodiode structure被引量：1
《Journal of Semiconductors》2014年第7期90-96,共7页曹琛 张冰 吴龙胜 李炘 王俊峰 
A novel analytical model of pinch-off voltage for CMOS image pixels with a pinned photodiode structure is proposed. The derived model takes account of the gradient doping distributions in the N buried layer due to the...
关键词：pinned photodiode pixel design pinch-off voltage analytical model 
Backgating effect in GaAs FETs with a channel–semi-insulating substrate boundary被引量：1
《Journal of Semiconductors》2014年第3期33-38,共6页Ahmed Chaouki Megherbi Said Benramache Abderrazak Guettaf 
This study focuses on modeling the effects of deep hole traps, mainly the effect of the substrate（backgating effect） in a GaAs transistor MESFT. This effect is explained by the existence, at the interface, of a spac...
关键词：traps pinch-off voltage resistance channel substrate interface 
An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor
《Journal of Semiconductors》2010年第7期53-56,共4页李斌桥 于俊庭 徐江涛 于平平 
Project supported by the National Natural Science Foundation of China(Nos.60806010,60976030);the Tianjin Innovation Special Funds for science and Technology,China(No.05FZZDGX00200).
An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well struct...
关键词：pinch-off voltage CMOS image sensor photon shot noise pixel design 
Electrical Performance of Static Induction Transistor with Mixed I-V Characteristics
《Journal of Semiconductors》2004年第3期266-271,共6页王永顺 刘肃 李思渊 胡冬青 
The mixed non-saturating I-V characteristics of static induction transistor (SIT) are investigated.The optimum matching relations among the structural,material,and technological parameters are also presented.The techn...
关键词：static induction transistor PINCH-OFF mixed characteristics SATURATION 
Influence of Device Narrowing on HALO-pMOSFETs' Degradation Under V_g= V_d/2 Stress Mode
《Journal of Semiconductors》2003年第12期1255-1260,共6页胡靖 赵要 许铭真 谭长华 
国家重点基础研究发展规划资助项目 (No.G2 0 0 0 0 3 65 0 3 )~~
The degradation characteristics of both wide and narrow devices under V _g= V _d/2 stress mode is investigated.The width-enhanced device degradation can be seen with devices narrowing.The main degradation mechanism is...
关键词：width-enhanced degradation pinch-off voltage current-crowding effect 
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