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POWER_AMPLIFIER: 作品数：137被引量：118H指数：4; 导出分析报告; 相关作者：刘新宇周健义姚小江李诚瞻陈延湖更多>>; 相关机构：中国科学院微电子研究所清华大学东南大学电子科技大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划中国博士后科学基金更多>>

A 24−30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NF in 65-nm CMOS: 《Journal of Semiconductors》2024年第1期22-32,共11页Yongran Yi Dixian Zhao Jiajun Zhang Peng Gu Chenyu Xu Yuan Chai Huiqi Liu Xiaohu You; This work was supported in part by the National Key Research and Development Program of China under Grant 2019YFB1803000;in part by the Major Key Project of Peng Cheng Laboratory,Shenzhen,China,under Project PCL2021A01-2.; This article presents an 8-element dual-polarized phased-array transceiver(TRX)front-end IC for millimeter-wave(mm-Wave)5G new radio(NR).Power enhancement technologies for power amplifiers(PA)in mm-Wave 5G phased-arra...; 关键词：fifth-generation(5G) power amplifier millimeter-wave TRANSCEIVER PHASED-ARRAY

Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz被引量：1: 《Journal of Semiconductors》2021年第12期44-51,共8页Quan Wang Changxi Chen Wei Li Yanbin Qin Lijuan Jiang Chun Feng Qian Wang Hongling Xiao Xiufang Chen Fengqi Liu Xiaoliang Wang Xiangang Xu Zhanguo Wang; supported by the National Key Research and Development Program of China(2017YFB0402900);the Key-Area Research and Development Program of Guangdong Province(2019B010126001);the Natural Science Foundation for Distinguished Young Scholars of Shandong Province(ZR2019JQ01);the National Natural Sciences Foundation of China(62074144,52022052,62004118);Key R&D plan of Shandong Province(2019JMRH0901,2019JMRH0201);the Natural Science Foundation of Shandong Province(ZR2019BEM030,ZR2019BEM011).; State-of-the-art AlGaN/GaN high electron mobility structures were grown on semi-insulating 4H-SiC substrates by MOCVD and X-band microwave power high electron mobility transistors were fabricated and characterized.Hal...; 关键词：AlGaN/GaN heterostructure MOCVD HEMTS power amplifier

A 0.1–1.5 GHz multi-octave quadruple-stacked CMOS power amplifier: 《Journal of Semiconductors》2020年第6期44-47,共4页Shizhe Wei Haifeng Wu Qian Lin Mingzhe Zhang; supported by the National Natural Science Foundation of China(No.61841110);AoShan Talents Outstanding Scientist Program by Pilot National Laboratory for Marine Science and Technology(Qingdao)(No.2017ASTCP-OS03)。; In this letter,we design and analyze 0.1–1.5 GHz multi-octave quadruple-stacked CMOS power amplifier(PA)in 0.18μm CMOS technology.By using two-stage quadruple-stacked topology and feedback technology,the proposed PA...; 关键词：power amplifier CMOS stacked multi-octave resistive matching

On-chip bias circuit for W-band silicon–germanium power amplifier: 《Journal of Semiconductors》2018年第12期185-189,共5页Shuo Yang Lijun Zhang Jun Fu Xiaobin Zhang; The performance of the power amplifier determines the detection capability of 77 GHz automotive radar, and the bias circuit is one of the most important parts of a silicon-germanium power amplifier. In this paper,we d...; 关键词：77 GHz automotive radar SiGe power amplifier W-BAND bias circuit

An 8–18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS被引量：2: 《Journal of Semiconductors》2018年第12期201-207,共7页Jie Gong Wei Li Jintao Hu Jiao Ye Tao Wang; Project supported partly by the National Natural Science Foundation of China(No.60123456);partly by the National 13th Five-Year Project; A wideband CMOS power amplifier with high gain and excellent gain flatness for X-Ku-band radar phased array is proposed in this paper. Excellent gain flatness is achieved with transformer based matching networks(TMNs)...; 关键词：CMOS wideband power amplifier X–Ku-band gain flatness

A high-efficiency low-voltage class-EPA for IoT applications in sub-1 GHz frequency range: 《Journal of Semiconductors》2017年第10期9-14,共6页Chenyi Zhou Zhenghao Lu Jiangmin Gu Xiaopeng Yu; supported by the National Natural Science Foundation of China(No.61574125);the Industry Innovation Project of Suzhou City of China(No.SYG201641); We present and propose a complete and iterative integrated-circuit and electro-magnetic（EM） co-design methodology and procedure for a low-voltage sub-1 GHz class-E PA.The presented class-E PA consists of the onchip ...; 关键词：CMOS technology power amplifier low voltage high efficiency CLASS-E EM co-simulation

A 500-600 MHz GaN power amplifier with RC-LC stability network被引量：1: 《Journal of Semiconductors》2017年第8期69-74,共6页Ying Lu Liang Shen Jiabo Wang Ya Shen; supported by the National Key Basic Research Program of China(No.2014CB339901); The GaAs-based TF-IPD fabrication process and equivalent lumped element circuit are utilized to re- duce the circuit size for double-section Wilkinson power divider. Ultimately the dimension of the proposed S-band pow...; 关键词：thin film integrated passive device （TF-IPD） parameters extraction DE-EMBEDDING lumped element

22 nm In0.75Ga0.25As channel-based HEMTs on InP/GaAs substrates for future THz applications被引量：1: 《Journal of Semiconductors》2017年第4期27-32,共6页J.Ajayan D.Nirmal; In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaA...; 关键词：cut off frequency low noise amplifiers maximum oscillation frequency power amplifier terahertz

A 77–100 GHz power amplifier using 0.1-μm GaAs PHEMT technology: 《Journal of Semiconductors》2017年第3期116-119,共4页Qin Ge Wei Liu Bo Xu Feng Qian Changfei Yao; A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 m Ga As pseudomorphic HEMT（PHEMT） technology, demonstrated a flat small signal gain of12.4±2 d B with a...; 关键词：W-band GaAs PHEMT MMIC wideband power amplifier

A highly linear power amplifier for WLAN被引量：1: 《Journal of Semiconductors》2016年第2期137-141,共5页金婕史佳艾宝丽张旭光; supported by the National Natural Science Foundation of China(No.61201244);the Natural Science Fund of SUES(No.E1-0501-14-0168); A three-stage power amplifier （PA） for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two m...; 关键词：power amplifier InGaP/GaAs HBT EVM （error vector magnitude） adaptive bias circuit WLAN

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