SPINTRONICS

作品数：151被引量：141H指数：5
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Magnetic tuning in a novel half-metallic Ir_(2)TeI_(2) monolayer
《Journal of Semiconductors》2022年第5期70-78,共9页Didi Zhao Chenggong Zhang Changwen Zhang Weixiao Ji Shengshi Li Peiji Wang 
supported by the Taishan Scholar Program of Shandong Province(No.ts20190939);National Natural Science Foundation of China(Grant No.62071200,12004137,11804116,52173283);the Natural Science Foundation of Shandong Province(Grant No.ZR2018MA035,ZR2020QA052,ZR2019MA041);Independent Cultivation Program of Innovat ion Team of Jinan City(Grant No.2021GXRC043)。
A two-dimensional(2D) high-temperature ferromagnetic half-metal whose magnetic and electronic properties can be flexibly tuned is required for the application of new spintronics devices. In this paper, we predict a st...
关键词：two-dimensional materials SPINTRONICS HALF-METAL magnetic anisotropy energy 
The predicaments and expectations in development of magnetic semiconductors被引量：1
《Journal of Semiconductors》2019年第8期9-19,共11页Qiang Cao Shishen Yan 
supported by the National Natural Science Foundation of China (Grant Nos. 11434006, and 51871112);the National Basic Research Program of China (Grant No. 2015CB921502);the 111 Project (Grant No. B13029);Shandong Provincial Natural Science Foundation (Grant No. ZR2018MA035)
Over the past half a century, considerable research activities have been directing towards the development of magnetic semiconductors that can work at room temperature. These efforts were aimed at seeking room tempera...
关键词：MAGNETIC SEMICONDUCTORS s  p-d interaction high concentration of MAGNETIC ATOMS low temperature NONEQUILIBRIUM growth SEMICONDUCTOR SPINTRONICS 
Perspectives on exfoliated two-dimensional spintronics被引量：3
《Journal of Semiconductors》2019年第8期81-91,共11页Xiaoxi Li Baojuan Dong Xingdan Sun Hanwen Wang Teng Yang Guoqiang Yu Zheng Vitto Han 
supported by the National Key R&D Program of China (No. 2017YFA0206302);supported by the National Natural Science Foundation of China (Grants No. 51627801);the finical supports from the National Natural Science Foundation of China (Grants No. 11874409);supports from the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC,China (No. U1537204)
Magnetic orderings, i.e., the spontaneous alignment of electron spins below a critical temperature, have been playing key roles in modern science and technologies for both the wide applications of magnetic recording f...
关键词：VAN der WAALS magnetic MATERIALS SPINTRONICS two dimensional MATERIALS 
Artificial neuron and synapse in spintronics devices
《Journal of Semiconductors》2019年第5期6-6,共1页Dahai Wei 
Neuromorphic computing is the development of computingschemes inspired by the processing of information in thebrain, which can execute complex tasks very efficiently usingan architecture that is completely different f...
关键词：Artificial NEURON and SYNAPSE in SPINTRONICS DEVICES 
Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in Ⅱ–Ⅵ semiconductor nanowires
《Journal of Semiconductors》2015年第2期1-1,2-5,共5页Sabiq Chishti Bahniman Ghosh Bhupesh Bishnoi 
We have analyzed the spin transport behaviour of four II-VI semiconductor nanowires by simulating spin polarized transport using a semi-classical Monte-Carlo approach. The different scattering mechanisms con- sidered ...
关键词：SPINTRONICS spin transport II-VI nanowire spin relaxation lengths Monte Carlo method 
Properties of polaron in a triangular quantum well induced by the Rashba effect被引量：2
《Journal of Semiconductors》2014年第10期1-4,共4页张海瑞 孙勇 
Project supported by the National Science Foundation of China Higher University(No.10347004);the Science Study Foundation of InnerMongolia(No.NJZY08085);the Science Foundation of Huhhot University of Nationalities(No.HMZZ1201)
The properties of the weakly-coupling bound polaron, considering an influence of Rashba effect, which is brought about by the spin-orbit （SO） interaction, in an semiconductor triangular quantum well （TQW）, have be...
关键词：triangular quantum well SPINTRONICS the ground state energy Rashba effect 
MOS Capacitance-Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity
《Journal of Semiconductors》2011年第4期1-9,共9页揭斌斌 薩支唐 
supported by the CTSAH Associates(CTSA);founded by the late Linda Su-Nan Chang Sah;the Xiamen University,China
The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is de- rived for MOS capacitors by the charge-storage method. Fermi-Dirac distribution and impurity deionization are included...
关键词：MOS capacitance trapping capacitance impurity deionization SPINTRONICS 
Preparation of (SiFe) C DMS Based 4H-SiC Substrate
《Journal of Semiconductors》2008年第8期1436-1440,共5页姜岩峰 王建平 
北京市属市管高校拔尖创新人才计划;北京市科技新星计划(批准号:2005B01)资助项目~~
A diluted magnetic 4H-SiC has been prepared by implanting Fe ions into the substrate. Its Curie temperature reaches as high as 320K and its technology is compatible with current IC. Moreover, the process includes thre...
关键词：SPINTRONICS diluted magnetic semiconductor ANNEALING Curie temperature 
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