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SURFACE_ROUGHNESS: 作品数：447被引量：917H指数：11; 导出分析报告; 相关作者：李亮左敦稳陆昌根姚倡锋张定华更多>>; 相关机构：南京航空航天大学南京信息工程大学西北工业大学大连理工大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划河北省自然科学基金国家高技术研究发展计划更多>>

Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning被引量：2: 《Journal of Semiconductors》2018年第12期212-217,共6页Liu Yang Baimei Tan Yuling Liu Baohong Gao Chunyu Han; Project supported by the Major National Science and Technology Special Projects(No.2016ZX02301003-004-007);the Natural Science Foundation of China(No.61704046);the Scientific Innovation Grant for Excellent Young Scientists of Hebei University of Technology(No.2015007);the Hebei Natural Science Foundation Project(No.F2018202174); The cleaning of copper interconnect chemical mechanical polishing(CMP) is a key process in integrated circuits(ICs) fabrication. Colloidal silica, which is used as the abrasive material in copper CMP slurry, is consid...; 关键词：CMP cleaning abrasive particles process parameter surface roughness

Researching the silicon direct wafer bonding with interfacial SiO_2 layer被引量：1: 《Journal of Semiconductors》2016年第5期121-124,共4页王小青俞育德宁瑾; Project supported by the Key Program of the National Natural Science Foundation of China(No.61334008);the National Natural Science Foundation of China(No.61376072); A silicon wafer direct bonding with a thin SiO2 layer at the interface was investigated. An atomic force microscope （AFM） was employed to characterize the surface roughness and a shearing test was carried out to eva...; 关键词：wafer direct bonding surface roughness bonding strength

Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(1122) aluminum nitride surface被引量：3: 《Journal of Semiconductors》2016年第3期115-121,共7页Khushnuma Asghar D.Das; financial support from the Department of Science and Technology(DST),Government of India(No,SR/S2/Cmp-0009/2011);partial support from the Board of Research in Nuclear Sciences(BRNS),Department of Atomic Energy(DAE),Government of India(No.-34/14/43/2014-BRNS)with ATC; An abrasive free chemical mechanical planarization（AFCMP） of semi-polar（1122） Al N surface has been demonstrated. The effect of slurry p H, polishing pressure, and platen velocity on the material removal rate（MRR...; 关键词：Al N AFCMP chemical mechanical planarization material removal rate surface roughness

Effect of H_2O_2 and nonionic surfactant in alkaline copper slurry被引量：2: 《Journal of Semiconductors》2015年第1期163-167,共5页袁浩博刘玉岭蒋勐婷陈国栋刘伟娟王胜利; Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308);the Hebei Natural Science Foundation of China(No.E2013202247);the Natural Science Foundation of Hebei Province,China(No.E2014202147); For improving the polishing performance, in this article, the roles of a nonionic surfactant（Fatty alcohol polyoxyethylene ether） and H2O2 were investigated in the chemical mechanical planarization process, respecti...; 关键词：copper CMP nonionic surfactant within wafer non-uniformity surface roughness electrochemical curve step height

Next generation barrier CMP slurry with novel weakly alkaline chelating agent被引量：1: 《Journal of Semiconductors》2015年第1期168-172,共5页樊世燕刘玉岭孙鸣唐继英闫辰奇李海龙王胜利; Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308);the Natural Science Foundation of Hebei Province,China(No.E2014202147); To strengthen the device performance with the pattern wafer by enhancing the Cu polishing rate and improve the surface roughness with the Cu lines, a new weakly alkaline chelating agent with a barrier slurry is develo...; 关键词：barrier CMP chelating agent polishing rate surface roughness

Mechanism analysis of the affect the copper line surface roughness after FA/O alkaline barrier CMP被引量：3: 《Journal of Semiconductors》2014年第12期150-154,共5页高娇娇刘玉岭王辰伟崔晋; The surface roughness seriously affects the performance of devices after barrier CMP. Due to the high surface roughness of copper line, the local resistance of a device will be high when working, then the copper line ...; 关键词：barrier CMP new alkaline barrier slurry FA/OIV chelating agent nonionic surfactant copper line surface roughness

Surface roughness of optical quartz substrate by chemical mechanical polishing被引量：1: 《Journal of Semiconductors》2014年第11期168-172,共5页段波周建伟刘玉岭孙铭斌张玉峰; supported by the Natural Science Foundation of Hebei Province(No.E2013202247);the Science and Technology Plan Project of Hebei Province(Nos.Z2010112,10213936);the Hebei Province Department of Education Fund(No.2011128); In order to achieve a high-quality quartz glass substrate and to improve the performance of TiO2 antireflection coating, chemical mechanical polishing （CMP） method was used. During CMP process, some process paramete...; 关键词：quartz substrate surface roughness removal rate CMP process parameters

Slurry components of TiO_2 thin film in chemical mechanical polishing: 《Journal of Semiconductors》2014年第10期190-194,共5页段波周建伟刘玉岭王辰伟张玉峰; Project supported by the Natural Science Foundation of Hebei Province(No.E2013202247);the Science and Technology Plan Project of Hebei Province(Nos.Z2010112,10213936);the Hebei Province Department of Education Fund(No.2011128); A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of sili...; 关键词：TiO2 thin film slurry components surface roughness removal rate

Investigation on surface roughness in chemical mechanical polishing of TiO_2 thin film: 《Journal of Semiconductors》2014年第6期10-13,共4页段波周建伟刘玉岭王辰伟张玉峰; Project supported by the Natural Science Foundation of Hebei Province(No.E2013202247);the Science and Technology Plan Project of Hebei Province(Nos.Z2010112,10213936);the Hebei Provincal Department of Education Fund(No.2011128); Abstract： Surface roughness by peaks and depressions on the surface of titanium dioxide （TiO2） thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient in...; 关键词：TiO2 thin film surface roughness CMP process parameters

Removal of residual CuO particles on the post CMP wafer surface of multi-layered copper被引量：4: 《Journal of Semiconductors》2014年第4期157-164,共8页李炎孙鸣牛新环刘玉岭何彦刚李海龙王傲尘李洪波; supported by the Major National Science and Technology Special Projects(No.2009ZX02308);the National Natural Science Foundation of Hebei Province,China(No.E2013202247);the Fund Project of Hebei Provincial Department of Education,China(No.2011128); This article introduces the removal technology of CuO particles on the post CMP wafer surface of multi-layered copper. According to the Cu film corrosion curve with different concentrations of HEO2 and the effect curv...; 关键词：electrochemical curves CuO particles chelating agent the step value of corrosion point alkalinecleaning solution surface roughness~ organic residues

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