Supported by National Natural Science Foundation of China(11174161,10874093);National Basic Research Program of China(2010CB934101,2010CB93801);The 111 Project(B07013);Tianjin International Cooperation Program and Oversea Excellent Teacher Project(MS2010NKDX023)
supported in part by the Ministry of Science and Technology of China (2010CB934200,2011CBA00600);the National Natural Science Foundation of China (61176073);the National Science and Technology Major Project of China (2009ZX02023-005);the Director’s Fund of Institute of Microelectronics,Chinese Academy of Science
This paper presents a 65-nm 1-Gb NOR-type floating-gate flash memory,in which the cell device and chip circuit are developed and optimized.In order to solve the speed problem of giga-level NOR flash in the deep submic...
The National Basic Research Program of China(973 Program,No.2007CB613305,2009CB22003,and 2009AA05Z117);NSFC21173242;the 863 program(No.2009AA05Z117);Chinese Academy of Sciences Knowledge Innovation Program(KGCX2-YW-390-1)