云南高校图书馆联盟文献共享服务平台- TUNNEL

TUNNEL: 作品数：890被引量：1951H指数：16; 导出分析报告; 相关领域：医药卫生更多>>; 相关作者：张照煌利奕年唐灯平刘东民杨其新更多>>; 相关机构：上海隧道工程股份有限公司东南大学同济大学上海交通大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金北京市自然科学基金更多>>

Si–Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications: 《Chinese Physics B》2023年第12期644-651,共8页Lucky Agarwal Varun Mishra Ravi Prakash Dwivedi Vishal Goyal Shweta Tripathi; A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in w...; 关键词：biomolecules high-k dielectric junction-less vertical tunnel field effect transistor(TFET)

Ambipolar performance improvement of the C-shaped pocket TFET with dual metal gate and gate–drain underlap: 《Chinese Physics B》2023年第10期700-707,共8页赵梓淼陈子馨刘伟景汤乃云刘江南刘先婷李宣霖潘信甫唐敏李清华白伟唐晓东; Project supported by the National Natural Science Foundation of China(Grant Nos.52177185 and 62174055)。; Dual-metal gate and gate–drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET).The effects of gate work function and gate–drain underlap leng...; 关键词：tunnel field effect transistor ambipolar current dual metal gate gate–drain underlap

An accurate analytical surface potential model of heterojunction tunnel FET: 《Chinese Physics B》2023年第10期731-737,共7页关云鹤黎欢陈海峰黄思伟; Project supported in part by the National Natural Science Foundation of China (Grant No. 62104192);in part by the Natural Science Basic Research Program of Shaanxi Province (Grant No. 2021JQ-717)。; Based on the accurate and efficient thermal injection method, we develop a fully analytical surface potential model for the heterojunction tunnel field-effect transistor(H-TFET). This model accounts for both the effec...; 关键词：surface potential model thermal injection method tunnel field-effect transistor HETEROJUNCTION

DC and analog/RF performance of C-shaped pocket TFET(CSP-TFET)with fully overlapping gate: 《Chinese Physics B》2022年第5期711-719,共9页Zi-Xin Chen Wei-Jing Liu Jiang-Nan Liu Qiu-Hui Wang Xu-Guo Zhang Jie Xu Qing-Hua Li Wei Bai Xiao-Dong Tang; Project supported by the National Natural Science Foundation of China(Grant Nos.52177185 and 62174055);Open Fund of Shanghai Key Laboratory of Multidimensional Information Processing,East China Normal University(Grant No.2019MIP002)。; A C-shaped pocket tunnel field effect transistor(CSP-TFET)has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve th...; 关键词：tunnel field effect transistor double gate POCKET

Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance: 《Chinese Physics B》2021年第7期624-630,共7页Hui-Fang Xu Wen Sun Na Wang; the University Natural Science Research Key Project of Anhui Province(Grant No.KJ2020A0075);Excellent Talents Supported Project of Colleges and Universities(Grant No.gxyq2018048)。; The various advantages of extended-source(ES),broken gate(BG),and hetero-gate-dielectric(HGD)technology are blended together for the proposed tunnel field-effect transistor(ESBG TFET)in order to enhance the direct-cur...; 关键词：extended-source broken gate radio-frequency performances tunnel field-effect transistor

Visualization of tunnel magnetoresistance effect in single manganite nanowires: 《Chinese Physics B》2020年第1期103-106,共4页Yang Yu Wenjie Hu Qiang Li Qian Shi Yinyan Zhu Hanxuan Lin Tian Miao Yu Bai Yanmei Wang Wenting Yang Wenbin Wang Hangwen Guo Lifeng Yin Jian Shen; Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0300702);Shanghai Municipal Natural Science Foundation,China(Grant Nos.19ZR1402800,18JC1411400,18ZR1403200,and 17ZR1442600);the Program of Shanghai Academic Research Leader,China(Grant Nos.18XD1400600 and 17XD1400400);the China Postdoctoral Science Foundation(Grant Nos.2016M601488 and 2017T100265); We reported a study of tunnel magnetoresistance(TMR)effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging.TMR value up to 290%has been observed in single(La1...; 关键词：manganite nanowires tunnel magnetoresistance magnetic force microscope

Delta-doped quantum wire tunnel junction for highly concentrated solar cells: 《Chinese Physics B》2019年第4期275-279,共5页Ali Bahrami Mahyar Dehdast Shahram Mohammadnejad Habib Badri Ghavifekr; We propose a novel structure for tunnel junction based on delta-doped AlGaAs/GaAs quantum wires. Higher spatial confinement of quantum wires alongside the increased effective doping concentration in the delta-doped re...; 关键词：DELTA-DOPING QUANTUM wire solar cell TUNNEL JUNCTION

Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer: 《Chinese Physics B》2019年第1期656-662,共7页Ru Han Hai-Chao Zhang Dang-Hui Wang Cui Li; Project supported by the National Natural Science Foundation of China(Grant Nos.61306116 and 61472322); A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics ...; 关键词：tunneling field effect TRANSISTOR T-SHAPED TUNNEL FIELD-EFFECT TRANSISTOR gate dielectric SPACER ambipolar current analog/RF performance

Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric: 《Chinese Physics B》2018年第7期572-579,共8页CongLi Zhi-Rui Yan Yi-Qi Zhuang Xiao-Long Zhao Jia-Min Guo; Project supported by the National Natural Science Foundation of China(Grant Nos.61574109 and 61204092); A Ge/Si heterojunction L-shaped tunnel field-effect transistor combined with hetero-gate-dielectric （GHL-TFET） is proposed and investigated by TCAD simulation. Current-voltage characteristics, energy-band diagrams, ...; 关键词：tunnel field-effect transistors Ge/Si heterojunction hetero-gate-dielectric ambipolar effect

Double-gate-all-around tunnel field-effect transistor: 《Chinese Physics B》2017年第7期449-453,共5页张文豪李尊朝关云鹤张也非; Project supported by the National Natural Science Foundation of China(Grant Nos.61176038 and 61474093);the Science and Technology Planning Project of Guangdong Province,China(Grant No.2015A010103002);the Technology Development Program of Shanxi Province,China(Grant No.2016GY075); In this work, a double-gate-all-around tunneling field-effect transistor is proposed. The performance of the novel device is studied by numerical simulation. The results show that with a thinner body and an additional...; 关键词：gate-all-around（GAA） tunnel field effect transistor（TFET） drain induced barrier thinning（DIBT）

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

TUNNEL

检索结果分析

下载全文

高级检索检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

TUNNEL

检索结果分析

下载全文

用户登录

高级检索检索式检索