ALGAAS

作品数：193被引量：128H指数：5
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  • 期刊=Chinese Physics Lettersx
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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures被引量：1
《Chinese Physics Letters》2011年第2期194-196,共3页YANG Xin-Rong XU Bo WANG Hai-Fei ZHAO Guo-Qing SHI Shu-Hui SHEN Xiao-Zhi LI Jun-Feng WANG Zhan-Guo 
Supported by the National Natural Science Foundation of China under Grant No 60990315;the National Basic ResearchProgram of China under Grant No 2006CB604904.
Self-assembled InAs quantum wires(QWRs)are fabricated on an InP substrate by solid-source molecular beam epitaxy(SSMBE).Photoluminescence(PL)spectra are investigated in these nanostructures as a function of temperatur...
关键词：ALGAAS temperature PHOTOLUMINESCENCE 
Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices
《Chinese Physics Letters》2006年第4期960-963,共4页戴振宏 倪军 
Supported by the National Natural Science Foundation of China under Grant No 10404022, and the National Basic Research Programme of China under Grant No G2000067107.
We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the ...
关键词：QUANTUM-WELL INTRINSIC BISTABILITY ELECTRICAL CHARACTERIZATION TRANSPORT DYNAMICS STATES RANGE 
Lattice Strain Induced by Ion Implantation in AlGaAs/AlGaInAs Quantum Well Samples被引量：1
《Chinese Physics Letters》2002年第4期599-601,共3页
A Novel GaAs／InGaAs／AlGaAs Structure of Modulation—Doped Field—Effect Transistors with High Transconductances
《Chinese Physics Letters》2002年第4期588-590,共3页常玉春 HailinLuo 等 
Red Luminesecnce from Self-Assembled InAlAs/AlGaAs Quantum Dots with Bimodal Size Distribution
《Chinese Physics Letters》1999年第4期298-300,共3页ZHOU Wei XU Bo XU Huai-zhe LIU Feng-qi GONG Qian JIANG Wei-hong SUN Zhong-zhe DING Ding LIANG Ji-bei WANG Zhan-guo ZHU Zuo-ming LI Guo-hua 
Supported by the National Natural Science Foundation of China under Grant No.69736010;the National Advanced Materials Committee of China(715-014-0040).
Red-emitting at about 640nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy are demonstrated.A doublepeak structure of photoluminescence(PL)spectra from q...
关键词：MODAL SIZES distribution 
Perimeter Effects on Heavy Doping GaAs Diodes
《Chinese Physics Letters》1998年第5期370-372,共3页SHI Xiao-zhong WANG Le XIA Guan-qun 
The influence of perimeter effects on dark I-V characteristics of GaAs diode is investigated experimentally.The results indicate that the diodes with high energy states density will be more easily shorted than that wi...
关键词：DIODE ALGAAS DIODES 
Fine Structure in the Electron Emission Process for Two DX-Like Centers in Sn-Doped AlGaAs
《Chinese Physics Letters》1998年第1期60-61,共2页ZHAN Hua-han KANG Jun-yong HUANG Qi-sheng 
Supported by the National Natural Science Foundation of China under Grant No.69576022;Natural Science Foundation of Fujian Province of China。
Fine structure in the electron emission process for DX(Sn)centers in AlGaAs has been studied with high resolution Laplace defect spectroscopy.The influence of the different local configuration of Al and Ga atoms aroun...
关键词：ALGAAS CENTERS DX 
Transverse Electric and Transverse Magnetic Active Intersubband Transitions in CaAs/AlGaAs Step Quantum Well
《Chinese Physics Letters》1994年第12期762-765,共4页CUI Dafu CHEN Zhenghao YUAN Zhenyu ZHOU Yueliang LÜ Huibin YANG Guozhen 
Supported by the National Natural Science Foundation of China.
We have observed transverse electric(TE)and transverse magnetic(TM)intersubband infrared absorption peaks in GaAs/AlGaAs step multiquantum wells(SMQW).The energy splitting between TE and TM is 13meV.The high conversio...
关键词：polarization WAVEGUIDE ALGAAS 
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