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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT
《Science China(Information Sciences)》2025年第1期376-382,共7页Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG 
National Natural Science Foundation of China(Grant No.62334003);Guangdong Basic and Applied Basic Research Foundation(Grant No.2020A1515110567).
In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor(MIS)cascode anode GaN lateral field-effect diode(CA-LFED)to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN ...
关键词：Schottky-MIS cascode anode lateral field-effect diode(LFED) ultralow reverse leakage current(ILEAK) forward drop and reverse leakage trade-off AlGaN/GaN HEMTs 
A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure
《Chip》2024年第1期35-42,共8页Ru Xu Peng Chen Xiancheng Liu Jianguo Zhao Tinggang Zhu Dunjun Chen Zili Xie Jiandong Ye Xiangqian Xiu Fayu Wan Jianhua Chang Rong Zhang Youdou Zheng 
supported by National Key R&D Project grant No.2022YFE0122700);National High-Tech R&D Project(grant No.2015AA033305);Jiangsu Provincial Key R&D Program(grant No.BK2015111);China Postdoctoral Science Foundation(grant No.2023M731583);Jiangsu Provincial Innovation and Entrepreneurship Doctor Program,the Research and Development Funds from State Grid Shandong Electric Power Company and Electric Power Research Institute.
GaN power electronic devices,such as the lateral AlGaN/GaN Schottky barrier diode(SBD),have received significant attention in recent years.Many studies have focused on optimizing the breakdown voltage(BV)of the device...
关键词：AlGaN/GaN Schottky barrier diode Double-barrier anode Turn-on voltage Ultra-high-voltage 
Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis
《Journal of Semiconductors》2022年第6期51-58,共8页Hao Wu Xuanwu Kang Yingkui Zheng Ke Wei Lin Zhang Xinyu Liu Guoqi Zhang 
This work was supported in part by Natural Science Foundation of China(Grant No.61804172);in part by GuangDong Province Key Technologies Research and Development Program(No.2019B010128001);in part by the Youth Innovation Promotion Association of CAS.
:In this work,the optimization of reverse leakage current(IR)and turn-on voltage(VT)in recess-free AlGaN/GaN Schottky barrier diodes(SBDs)was achieved by substituting the Ni/Au anode with TiN anode.To explain this phe...
关键词：ALGAN/GAN Schottky barrier diode TIN current transport mechanism 
Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode
《Chinese Physics B》2022年第5期652-656,共5页Qiliang Wang Tingting Wang Taofei Pu Shaoheng Cheng Xiaobo Li Liuan Li Jinping Ao 
Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101690001);the Natural Science Foundation of Sichuan Province,China(Grant No.22YYJC0596)。
A quasi-vertical Ga N Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage.By inserting a Si N dielectric between the anode metal with a relatively ...
关键词：Schottky barrier diode hybrid anode dielectric edge termination 
Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor
《Chinese Physics B》2022年第4期672-675,共4页Ji-Yao Du Xiao-Bo Li Tao-Fei Pu Jin-Ping Ao 
supported by the Scientific Research Support Foundation for Introduced High-Level Talents of Shenyang Ligong University(Grant No.1010147000914);the Science and Technology Program of Ningbo(Grant No.2019B10129)。
Effect of anode area on temperature sensing ability is investigated for a vertical GaN Schottky-barrier-diode sensor.The current-voltage-temperature characteristics are comparable to each other for Schottky barrier di...
关键词：GAN temperature sensor Schottky contact vertical diode 
Regulating Zn Deposition via an Artificial Solid–Electrolyte Interface with Aligned Dipoles for Long Life Zn Anode被引量：14
《Nano-Micro Letters》2021年第5期107-117,共11页Kai Wu Jin Yi Xiaoyu Liu Yang Sun Jin Cui Yihua Xie Yuyu Liu Yongyao Xia Jiujun Zhang 
the partial financial support from the National Natural Science Foundation of China(21935003 and 21805182);National Key Research and Development Plan(2016YFB0901503);Shanghai Pujiang Program(18PJ1403800);the support from the Hundreds of Talents program of Sun Yat-sen University。
Aqueous zinc ion batteries show prospects for next-generation renewable energy storage devices.However,the practical applications have been limited by the issues derived from Zn anode.As one of serious problems,Zn den...
关键词：Regulated Zn deposition Artificial solid-electrolyte interface Perovskite type dielectric material Zn anode Zn ion battery 
Vertical GaN Shottky barrier diode with thermally stable TiN anode
《Chinese Physics B》2021年第3期479-482,共4页Da-Ping Liu Xiao-Bo Li Tao-Fei Pu Liu-An Li Shao-Heng Cheng Qi-Liang Wang 
Project supported by the Open Project of State Key Laboratory of Superhard Materials,Jilin University(Grant No.201906);Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics(Grant No.202006);the Science and Technology Program of Ningbo(Grant No.2019B10129).
Vertical GaN Schottky barrier diodes with Ti N anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98...
关键词：GAN Vertical Schottky barrier diode TIN interface quality 
Snapback-free shorted anode LIGBT with controlled anode barrier and resistance
《Chinese Physics B》2021年第2期557-562,共6页Shun Li Jin-Sha Zhang Wei-Zhong Chen Yao Huang Li-Jun He Yi Huang 
Project supported by the National Natural Science Foundation of China(Grant Nos.61604027 and 61704016);the Fund from Chongqing Technology Innovation and Application Development(Key Industry Research and Development),China(Grant No.cstc2018jszx-cyzd0646)。
A novel shorted anode lateral-insulated gate bipolar transistor(SA LIGBT)with snapback-free characteristic is proposed and investigated.The device features a controlled barrier V_(barrier)and resistance R_(SA)in anode...
关键词：shorted anode lateral-insulated gate bipolar transistor SNAPBACK BARRIER trade-off 
Integration of machine learning with phase field method to model the electromigration induced Cu_(6)Sn_(5) IMC growth at anode side Cu/Sn interface被引量：3
《Journal of Materials Science & Technology》2020年第24期203-219,共17页Anil Kunwar Yuri Amorim Coutinho Johan Hektor Haitao Ma Nele Moelans 
financially supported by the KU Leuven Research Fund(C14/17/075);the National Natural Science Foundation of China(No.51871040);the European Research Council(ERC)under the European Union’s Horizon 2020 research and innovation program(INTERDIFFUSION,No.714754)。
Currently,in the era of big data and 5G communication technology,electromigration has become a serious reliability issue for the miniaturized solder joints used in microelectronic devices.Since the effective charge nu...
关键词：Phase field method Artificial neural network Intemetallic compound Current density Synchrotron radiation 
Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes被引量：1
《Chinese Physics B》2020年第1期417-423,共7页Qian Chen Songhe Yang Lei Dong Siyuan Cai Jiaju Xu Zongxiang Xu 
Project supported by the Shenzhen Personal Maker Project,China(Grant No.GRCK2017082316173208);the Shenzhen Overseas High-level Talents Innovation Plan of Technical Innovation,China(Grant No.KQJSCX20180323140712012);the Special Funds for the Development of Strategic Emerging Industries in Shenzhen,China(Grant No.JCJY20170818154457845)
Two soluble tetraalkyl-substituted zinc phthalocyanines(ZnPcs)for use as anode buffer layer materials in tris(8-hydroxyquinoline)aluminum(Alq3)-based organic light-emitting diodes(OLEDs)are presented in this work.The ...
关键词：organic light-emitting diode anode buffer layer metal phthalocyanine solution process 
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