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BUFFER_LAYER: 作品数：373被引量：330H指数：6; 导出分析报告; 相关作者：于军胜赵正平陈昊李亮蔡树军更多>>; 相关机构：电子科技大学清华大学河北半导体研究所中国科学院微电子研究所更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金国家高技术研究发展计划更多>>

Effects of BaTiO3 and SrTiO3 as the buffer layers of epitaxial BiFeO3 thin films: 《Science China(Physics,Mechanics & Astronomy)》2017年第6期69-73,共5页Yu Feng Can Wang ShiLu Tian Yong Zhou Chen Ge HaiZhong Guo Meng He KuiJuan Jin GuoZhen Yang; supported by the National Key Basic Research Program of China (Grant Nos. 2014CB921002, and 2013CBA01703);the National Natural Science Foundation of China (Grant Nos. 11174355, 11674385, and 11574365);the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB07030200); BiFeO_3 (BFO) thin films with BaTiO_3 (BTO) or SrTiO_3 (STO) as buffer layer were epitaxially grown on SrRuO_3-covered SrTiO_3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain ...; 关键词：BFO buffer layer strain

Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes: 《Journal of Semiconductors》2017年第4期1-5,共5页Xiaohui Yi Zhiwei Huang Guangyang Lin Cheng Li Songyan Chen Wei Huang Jun Li Jianyuan Wang; Project supported by the Key Project of Natural Science Foundation of China(No.61534005);the National Science Foundation of China(No.61474081);the National Basic Research Program of China(No.2013CB632103);the Natural Science Foundation of Fujian Province(No.2015D020);the Science and Technology Project of Xiamen City(No.3502Z20154091); The influence of defects in low temperature Ge layer on electrical characteristics of p-Ge/i-Ge/n-Si and n-Ge/i-Ge/p-Ge photodiodes（PDs） was studied.Due to a two-step growth method,there are high defect densities in...; 关键词：germanium photodiodes defects dark current simulation

Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_(0.82)Ga_(0.18)As buffer layer: 《Optoelectronics Letters》2016年第6期441-445,共5页魏秋林郭作兴赵磊赵亮袁德增缪国庆夏茂盛; supported by the National Key Basic Research Program of China(No.2012CB619200);the National Natural Science Foundation of China(No.61474053);the State Key Laboratory for Mechanical Behavior of Materials of Xi'an Jiaotong University(No.20161806);the Natural Science Basic Research Open Foundation of the Key Lab of Automobile Materials,Ministry of Education,Jilin University(No.1018320144001); Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission elec...; 关键词：indium epitaxial dislocation verified optimize MOCVD HRTEM mismatch scatter arrangement

Defect Reduction in GaAs/Si Films with the a-Si Buffer Layer Grown by Metalorganic Chemical Vapor Deposition: 《Chinese Physics Letters》2015年第8期165-168,共4页王俊胡海洋贺云瑞邓灿王琦段晓峰黄永清任晓敏; Supported by the Fund of State Key Laboratory of Information Photonics and Optical Communications of Beijing University of Posts and Telecommunications;the National Basic Research Program of China under Grant No 2010CB327601;the Natural Science Foundational Science and Technology Cooperation Projects under Grant No 2011RR000100;the 111 Project of China under Grant No B07005;the Doctoral Program of Higher Specialized Research Fund under Grant No 20130005130001; The growth of GaAs epilayers on silicon substrates with a thin amorphous silicon （a-Si） buffer layer by met- alorganic chemical vapor deposition is investigated in detail. Combining with the two-step growth method, ...

Effect of CoSi_2 buffer layer on structure and magnetic properties of Co films grown on Si(001) substrate: 《Chinese Physics B》2015年第1期484-488,共5页胡泊何为叶军汤进 Syed Sheraz Ahmad 张向群成昭华; Project supported by the National Basic Research Program of China(Grant Nos.2011CB921801 and 2012CB933102);the National Natural Science Foundation of China(Grant Nos.11374350,11034004,11274361,and 11274033);the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20131102130005); Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of Co Si2 buffer layers were grown on Si（001） substrates. In order to investi...; 关键词：magnetic anisotropy Co Si2 buffer layers four-fold symmetry

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer: 《Chinese Physics Letters》2014年第12期138-142,共5页周旭亮潘教青于红艳李士颜王宝军边静王圩; In the last two decades, m-v compound semi- conductor materials grown on elemental semiconduc- tor substrates have attracted much attention due to their potential applications in high-efficiency so- lar cells, photode...

Investigation of the effects of MoO_3 buffer layer on charge carrier injection and extraction by capacitance–voltage measurement: 《Chinese Science Bulletin》2014年第8期747-753,共7页Wei Gong Zheng Xu Suling Zhao Xiaodong Liu Xing Fan Qianqian Yang Chao Kong; supported by the National Basic Research Program of China(2010CB327704);the Research Fund for the Doctoral Program of Higher Education(20130009130001);the National Natural Science Foundation of China(51272022);the Research Fund for the Doctoral Program of Higher Education(20120009130005);the Program for New Century Excellent Talents in University of Ministry of Education of China(NCET-10-0220);the Fundamental Research Funds for the Central Universities(2012JBZ001); The effects of MoO3thin buffer layer on charge carrier injection and extraction in inverted configuration ITO/ZnO/MEH-PPV(poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene))/MoO3(0,5 nm)/Ag hybrid solar cells a...; 关键词：三氧化钼载流子注入电压测量电容比缓冲层提取 MEH-PPV 光照条件

Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer被引量：1: 《Chinese Physics B》2014年第3期489-492,共4页温慧娟张进成陆小力王之哲哈微葛莎莎曹荣涛郝跃; Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant Nos.2011ZX01002-002 and 2013ZX02308-002);the Fundamental Research Funds for the Central Universities of Ministry of Education of China;the National Natural Science Foundation of China(Grant Nos.61204006 and 61106063); The quality of an A1GaN channel heterojunction on a sapphire substrate is massively improved by using an A1- GaN/GaN composite buffer layer. We demonstrate an A10.4Gao.6N/AI0.18Ga0.82N heterojunction with a state-of-t...; 关键词：AlGaN channel HETEROJUNCTION MOBILITY electrical properties

Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells: 《Chinese Physics B》2013年第12期503-508,共6页龚伟徐征赵谡玲刘晓东樊星杨倩倩孔超; Project supported by the National Basic Research Program of China(Grant No.2010CB327704);the National Natural Science Foundation of China(Grant No.51272022);the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-10-0220);the Research Fund for the Doctoral Program of Higher Education,China(Grant No.20120009130005);the Fundamental Research Funds for the Central Universities,China(Grant No.2012JBZ001); We investigate the effects of （N,N’-diphenyl）-N,N’-bis（1-naphthyl）-1,1’-biphenyl-4,4’-diamine （NPB） buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin...; 关键词：NPB capacitance–voltage measurement charge collection buffer layer

Flexible white top-emitting organic light-emitting diode with a MoO_x roughness improvement layer被引量：1: 《Chinese Physics B》2013年第12期537-541,共5页陈淑芬郭旭邬强赵晓飞邵茗黄维; Project supported by the National Key Basic Research and Development Program of China(Grant No.2009CB930600);the National Natural Science Founda-tion of China(Grant Nos.61274065,60907047,51173081,and 61136003);the"333"and"Qing Lan"Program of Jiangsu Province,and the"Qing Lan"and"Pandeng"Project of Nanjing University of Posts and Telecommunications(Grant Nos.NY210040,NY211069,and NY 210015); In this paper, an MoOx film is deposited on a polyethylene terephthalate （PET） substrate as a buffer layer to improve the surface roughness of the flexible PET substrate. With an optimized MoOx thickness of 100 nm, ...; 关键词：flexible white TEOLED MoOx buffer layer color stability flexibility

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