云南高校图书馆联盟文献共享服务平台- CMP

CMP: 作品数：980被引量：2024H指数：17; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：刘玉岭王辰伟檀柏梅陈岚牛新环更多>>; 相关机构：河北工业大学清华大学中国科学院微电子研究所罗门哈斯电子材料CMP控股股份有限公司更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金河北省自然科学基金国家中长期科技发展规划重大专项国家科技重大专项更多>>

Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning被引量：2: 《Journal of Semiconductors》2018年第12期212-217,共6页Liu Yang Baimei Tan Yuling Liu Baohong Gao Chunyu Han; Project supported by the Major National Science and Technology Special Projects(No.2016ZX02301003-004-007);the Natural Science Foundation of China(No.61704046);the Scientific Innovation Grant for Excellent Young Scientists of Hebei University of Technology(No.2015007);the Hebei Natural Science Foundation Project(No.F2018202174); The cleaning of copper interconnect chemical mechanical polishing(CMP) is a key process in integrated circuits(ICs) fabrication. Colloidal silica, which is used as the abrasive material in copper CMP slurry, is consid...; 关键词：CMP cleaning abrasive particles process parameter surface roughness

Effect of 1,2,4-triazole on galvanic corrosion between cobalt and copper in CMP based alkaline slurry被引量：5: 《Journal of Semiconductors》2018年第4期77-82,共6页Lei Fu Yuling Liu Chenwei Wang Linan Han; Project supported by the Major National Science and Technology Special Projects(No.2016ZX02301003-004-007);the Natural Science Foundation of Hebei Province,China(No.F2015202267);the Outstanding Young Science and Technology Innovation Fund of Hebei University of Technology(No.2015007); Cobalt has become a new type of barrier material with its unique advantages since the copper-interconnects in the great-large scale integrated circuits （GLSI） into 10 nm and below technical nodes, but cobalt and cop...; 关键词：COBALT 1 2 4-TRIAZOLE galvanic corrosion alkaline polishing slurry CMP

The stability of a novel weakly alkaline slurry of copper interconnection CMP for GLSI被引量：2: 《Journal of Semiconductors》2018年第2期78-85,共8页Caihong Yao Chenwei Wang Xinhuan Niu Yan Wang Shengjun Tian Zichao Jiang Yuling Liu; supported by the Major National Science and Technology Special Projects(No.2016ZX02301003-004-007);the Professional Degree Teaching Case Foundation of Hebei Province,China(No.KCJSZ2017008);the Natural Science Foundation of Hebei Province,China(No.F2015202267);the Natural Science Foundation of Tianjin,China(No.16JCYBJC16100); Chemical mechanical polishing（CMP） is one of the important machining procedures of multilayered copper interconnection for GLSI, meanwhile polishing slurry is a critical factor for realizing the high polishing perfo...; 关键词：stability weakly alkaline slurry CMP copper interconnection

Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET被引量：1: 《Journal of Semiconductors》2016年第4期120-124,共5页张金刘玉岭闫辰奇何彦刚高宝红; Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308);the Natural Science Foundation for the Youth of Hebei Province(Nos.F2012202094,F2015202267);the Outstanding Youth Science and Technology Innovation Fund of Hebei University of Technology(No.2013010); The replacement metal gate（RMG） defectivity performance control is very challenging in high-k metal gate（HKMG） chemical mechanical polishing（CMP）. In this study, three major defect types, including fall-on parti...; 关键词：chemical mechanical planarization（CMP） high-k metal gate（HKMG） defectivity control surface morphology

Investigation of aluminum gate CMP in a novel alkaline solution被引量：1: 《Journal of Semiconductors》2016年第1期137-144,共8页冯翠月刘玉岭孙鸣张文倩张金王帅; Beyond 45 nm, due to the superior CMP performance requirements with the metal gate of aluminum in the advanced CMOS process, a novel alkaline slurry for an aluminum gate CMP with poly-amine alkali slurry is investigat...; 关键词：alkaline solution ALUMINUM CMP ELECTROCHEMICAL surface micromorphology

A new kind of chelating agent with low pH value applied in the TSV CMP slurry被引量：2: 《Journal of Semiconductors》2015年第12期143-146,共4页洪姣刘玉岭张保国牛新环韩力英; supported by the Major National Science and Technology Special Projects(No.2009ZX02308);the Fund Project of Hebei Provincial Department of Education,China(No.QN2014208);the Natural Science Foundation of Hebei Province,China(No.E2013202247);the Colleges and Universities Scientific Research Project of Hebei Province,China(No.Z2014088); TSV（through silicon via） is an emerging technology, which can realize micromation compared with the conventional packaging and extend Moore＇s law. Chemical mechanical polishing（CMP） is one of the most important s...; 关键词：low pH value alkaline slurry removal rate ROUGHNESS

Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization被引量：1: 《Journal of Semiconductors》2015年第12期147-150,共4页贾少华刘玉岭王辰伟闫辰奇; supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308); The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of Ecorr and Icorr in the Cu electrolyte at different concentrations of oxidant H2O2. It c...; 关键词：hydrogen peroxide PASSIVATION DISHING ALKALINE Cu CMP

A novel compound cleaning solution for benzotriazole removal after copper CMP被引量：2: 《Journal of Semiconductors》2015年第10期155-160,共6页顾张冰刘玉岭高宝红王辰伟邓海文; Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(Nos.2009ZX02308-003,2014ZX02301003-007); After the chemical mechanical planarization （CMP） process, the copper surface is contaminated by a mass of particles （e.g. silica） and organic residues （e.g. benzotriazole）, which could do great harm to the inte...; 关键词：benzotriazole removal alkaline chelating agent SURFACTANT corrosion inhibitor

A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate: 《Journal of Semiconductors》2015年第9期143-148,共6页樊世燕刘恩海张军刘玉岭王磊林凯孙鸣石陆魁; Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308);the Natural Science Foundation of Hebei Province,China(No.F2013202104); The influence of the components of an alkali polishing slurry and the mutual influences on the Cu polishing rate were investigated by a CMP polishing rate prediction model established with a modified artificial neural...; 关键词：polishing slurry polishing rate sensitivity analysis artificial neural network artificial bee colonyalgorithm

Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer被引量：1: 《Journal of Semiconductors》2015年第7期148-153,共6页栾晓东刘玉岭牛新环王娟; Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308);the National Natural Science Foundation of Hebei Province,China(No.E2013202247);the Department of Education-Funded Research Projects of Hebei Province,China(No.QN2014208); Controllable removal rate selectivity with various films （Cu, Ta, SiO2） is a challenging job in barrier CMP. H2O2 as an oxidizer and benzotriazole （BTA） as an inhibitor is considered to be an effective method in b...; 关键词：CMP barrier slurry SELECTIVITY CLEANING

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