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作品数：415被引量：518H指数：11
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A 0.5–3.0 GHz SP4T RF switch with improved body self-biasing technique in 130-nm SOI CMOS被引量：1
《Journal of Semiconductors》2020年第10期63-69,共7页Hao Zhang Qiangsheng Cui Xu Yan Jiahui Shi Fujiang Lin 
A single-pole four-throw(SP4T)RF switch with charge-pump-based controller is designed and implemented in a commercial 130-nm silicon-on-insulator(SOI)CMOS process.An improved body self-biasing technique based on diode...
关键词：RF switch silicon-on-insulator body self-biasing technique multistack FETs 
A low power CMOS VCO using inductive-biasing with high performance FoM
《Journal of Semiconductors》2016年第4期100-105,共6页刘伟豪 黄鲁 
Project supported by the National Science and Technology Major Project of China(No.2011ZX03004-002-01)
A novel voltage-controlled oscillator（VCO） topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage ga...
关键词：low power inductive-biasing feedback path phase noise voltage controlled oscillators（VCO） 
Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes被引量：3
《Journal of Semiconductors》2015年第6期105-109,共5页姚常飞 周明 罗运生 许从海 
Two broadband detectors at W-band and D-band are analyzed and designed with low barrier Schottky diodes. The input circuit of the detectors is realized by low and high impedance microstrip lines, and their output circ...
关键词：millimeter wave zero bias Schottky diode detector voltage sensitivity 
Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure
《Journal of Semiconductors》2012年第5期48-52,共5页李琦 王卫东 赵秋明 韦雪明 
Project supported by the Guangxi Natural Science Foundation of China(No.2010GXNSFB013054);the Guangxi Key Science and Technology Program of China(No.11107001-20)
A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology（SB） is reported.The P-type epitaxial layer is embedded between an N-type drift region and an N-typ...
关键词：substrate bias breakdown voltage diode on-resistance 
Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect被引量：1
《Journal of Semiconductors》2011年第2期33-37,共5页周建华 高明辉 彭树根 邹世昌 
As SOI-CMOS technology nodes reach the tens ofnanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is ana...
关键词：partially depleted SOI-CMOS floating body effect HOT-CARRIERS kink-effect gate oxide tunneling 
Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT
《Journal of Semiconductors》2010年第10期24-27,共4页蒲颜 王亮 袁婷婷 欧阳思华 庞磊 刘果果 罗卫军 刘新宇 
Project supported by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191)
The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are di...
关键词：AlGaN/GaN HEMT multi-bias CV curves non-linear CV model 
An offset-insensitive switched-capacitor bandgap reference with continuous output
《Journal of Semiconductors》2009年第8期132-135,共4页郑鹏 严伟 张科 李文宏 
supported by the National Natural Science Foundation of China(No.60676013)
An improved switched-capacitor bandgap reference with a continuous output voltage of 1.26 V has been implemented with Chartered 0.35-μm 5-V CMOS process. The output offset voltage, induced by non-ideal characteristic...
关键词：bandgap reference SWITCHED-CAPACITOR OFFSET self-bias continuous output 
A 3GHz Low-Power and Low-Phase-Noise LC VCO with a Self-Biasing Current Source被引量：3
《Journal of Semiconductors》2008年第11期2106-2109,共4页陈普锋 李志强 黄水龙 张海英 叶甜春 
the National Natural Science Foundation of China(No.60276021);the State Key Development Program for Basic Research of China(No.G2002CB311901)~~
A fully integrated 3GHz low-power and low-phase-noise voltage-controlled oscillator （VCO） with a self-biasing current source was implemented in a standard 0.18μm CMOS process. A trade-off between noise and power wa...
关键词：3GHz LC VCO phase noise self-biasing current source CMOS 
A Compact Ka-Band PHEMT MMIC Voltage Controlled Oscillator
《Journal of Semiconductors》2005年第6期1111-1115,共5页余稳 孙晓玮 钱蓉 张义门 
A compact Ka-band monolithic microwave integrated circuit(MMIC) voltage controlled oscillator (VCO) with wide tuning range and high output power,which is based on GaAs PHEMT process,is presented.A method is introduced...
关键词：VCO MMIC KA-BAND active-biasing PHEMT 
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