FeCoCrMnNiN_(x)high entropy nitride ceramics thin films were prepared using the magnetron sputtering method,and the effects of nitrogen content on the thin films’properties were later examined.The addition of N_(2)af...
Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0670000);the National Key Research and Development Program of China(Grant No.2023YFB4404904);the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0303030002);the Autonomous Deployment Project of State Key Laboratory of Materials for Integrated Circuits(Grant No.SKLJC-Z2024-B04).
The regulation of superconductivity in thin films can provide important information on low-dimensional superconducting properties,and also has important reference values for the application in superconducting devices....
the National Natural Science Foundation of China(Nos.U2032101 and 11905306);the National Key Research and Development Project of China(No.2022YFB2402602).
The early stages of crystallization and occurrence of surface wrinkling were investigated using poly(butadiene)-block-poly(ε-caprolactone)with an ordered lamellar structure.Direct evidence has demonstrated that surfa...
The rapid industrial growth and increasing population have led to significant pollution and deterioration of the natural atmospheric environment.Major atmospheric pollutants include NO_(2)and CO_(2).Hence,it is impera...
supported by the National Natural Science Foundation of China(No.62375231);the National Key Research and Development Program of China(No.2020YFC2200403);the Fujian Province Science and Technology Planning Project of China(No.2022H6015)。
For bicolor regulation in laser protection compatible with visible light stealth,a metal–dielectric–enhanced reflection asymmetric Fabry–Perot structure is proposed that has high reflectance at the laser wavelength...
financially supported by NSFC(22125110,U23A2094,22205233,22193042,21921001,U21A2069 and 22305248);the Natural Science Foundation of Fujian Province(2023J02028,2023J01235);the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(ZDBS-LY-SLHO24);the China Postdoctoral Science Foundation(2022TQ0337 and 2023M733497).
Optical controlling of solid-sate electric properties is emerging as a non-contact and nondestructive avenue to optimize the physical properties of electronic and optoelectronic devices.In term of strong light-materia...
Research and Development of Single Crystal Diamond Semiconductors and Device Technologies,Grant/Award Number:20233160A0738;National Natural Science Foundation of China,Grant/Award Number:22275154。
Diamond is an ultimate semiconductor with exceptional physical and chemical properties,such as an ultra‐wide bandgap,excellent carrier mobility,extreme thermal conductivity,and stability,making it highly desirable fo...
Thin transparent oxide conducting films(TCOFs)of titanium and gallium substituted zinc oxide(TGZO)were fabricated via radio frequency(RF)magnetron sputtering technique.The effects of RF power on electrical,linear and ...
Developing lightweight and flexible thin films for electromagnetic interference(EMI)shielding is of great importance.Porous thin films of reduced graphene oxide containing SiC whiskers(SiC@RGO)for EMI shielding were p...
supported by the National Key Research and Development Program of China(Grant Nos.2023YFA1406404 and 2020YFA0309100);the National Natural Science Foundation of China(Grant Nos.12074365,12374094,12304153,U2032218,and 11974326),the National Natural Science Foundation of China(Grant No.12274120);CAS Project for Young Scientists in Basic Research(Grant No.YSBR-084);the Fundamental Research Funds for the Central Universities(Grant Nos.WK9990000102 and WK2030000035);Anhui Provincial Natural Science Foundation(Grant No.2308085MA15);Hefei Science Center CAS Foundation(Grant Nos.2021HSC-CIP017 and 2016HSC-IU06);the China Postdoctoral Science Foundation(Grant No.2022M713060)。
Doped HfO_(2)-based ferroelectric(FE)films are emerging as leading contenders for next-generation FE nonvolatile memories due to their excellent compatibility with complementary metal oxide semiconductor processes and...