云南高校图书馆联盟文献共享服务平台- LASER

检索规则说明：AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：范例一： (K=图书馆学 OR K=情报学) AND A=范并思　　　　范例二：J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual

全部期刊核心期刊 EI来源期刊 SCI来源期刊 CA来源期刊 CSCD来源期刊 CSSCI来源期刊

Design of low power 4×40 Gb/s laser diode driver for parallel optical transmission systems: 《Science China(Information Sciences)》2017年第8期242-244,共3页Yingmei CHEN Zhen ZHANG Jiquan LI Hui WANG Pengxia WANG Yanwei LI; supported by National Natural Science Foundation of China (Grant No. 61674032);National Basic Research Program of China (973) (Grant No. 2011AA010301);GF SiGe BiCMOS technology; Compared with conventional electrical interconnection technology,optical interconnection has the merits of anti-interference,small signal loss,long transmission distance and so on.Furthermore,parallel optical intercon...; 关键词：of is on VCSEL Design of low power 4 Gb/s laser diode driver for parallel optical transmission systems for

Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of In GaN/GaN quantum wells in laser diode structures被引量：1: 《Chinese Optics Letters》2016年第6期55-59,共5页曹文彧胡晓东; supported by the National Natural Science Foundation of China(Nos.61334005,51272008,and51102003);the National Basic Research Program of China(No.2012CB619304); Measurements of the excitation power-dependence and temperature-dependence photoluminescence（PL） are performed to investigate the emission mechanisms of In Ga N/Ga N quantum wells（QWs） in laser diode structures. T...; 关键词：confined Stark piezoelectric excitation thermally partially tempera fitting screening attributed

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure: 《Chinese Physics B》2013年第7期415-419,共5页曹文彧贺永发陈钊杨薇杜为民胡晓东; Project supported by the National Basic Research Program of China(Grant No.2012CB619304);the National Natural Science Foundation of China(Grant Nos.61076013 and 51272008);the Beijing Municipal Science and Technology Project,China(Grant No.H030430020000); The electroluminescence （EL） and photoluminescence （PL） spectra of InGaN/GaN multiple quantum wells （MQWs） with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection curr...; 关键词：ELECTROLUMINESCENCE quantum-confined Stark effect InGaN/GaN quantum wells laser diode

Time delay in InGaN multiple quantum well laser diodes at room temperature: 《Chinese Physics B》2010年第12期305-309,共5页季莲江德生张书明刘宗顺曾畅赵德刚朱建军王辉段俐宏杨辉; Project supported by the National Natural Science Foundation of China (Grant Nos. 60976045,60506001,60836003 and 60776047);the National Basic Research Program of China (Grant No. 2007CB936700);the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017); This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes. The delay time decreases as the pumping current increases, and the ...; 关键词：INGAN laser diode delay effect saturable absorber TRAPS

GaN-based violet laser diodes grown on free-standing GaN substrate: 《Chinese Physics B》2009年第12期5350-5353,共4页张立群张书明江德生王辉朱建军赵德刚刘宗顺杨辉; Project supported by the National Natural Science Foundation of China (Grant Nos 60506001,60776047,60476021,60576003 and 60836003);the National Basic Research Programme of China (Grant No 2007CB936700); A violet laser diode （LD） structure is grown on a free-standing c-plane GaN substrate and 4 μm×800μm ridge waveguide LDs are fabricated. The electrical and the optical characteristics of LDs under different facet...; 关键词：GaN laser diode mounting configuration active region temperature

High-Efficiency High-Power Nd：YAG Laser under 885 nm Laser Diode Pumping: 《Chinese Physics Letters》2009年第11期92-94,共3页李芳琴张小富宗楠杨晶彭钦军崔大复许祖彦; Supported by the National Basic Research Program of China under Grant No 2004CB619006, and the National Natural Science Foundation of China under Grant No 50590404.; A high-efficiency high-power Nd：YAG laser under 885 nm laser diode （LD） pumping is demonstrated. The laser crystal is carefully designed, and the overlapping between the pump modes and the laser modes is optimized....; 关键词：OPTICS quantum optics and lasers

Effects of transverse mode coupling and optical confinement factor on gallium-nitride based laser diode: 《Chinese Physics B》2008年第4期1274-1279,共6页靳晓民章蓓代涛张国义; Project supported by the Wang Faculty Fellowship at Peking University,Beijing,China,2006-2007 through California State University (CSU) International Programs USA;the National Basic Research Program of China (Grant No 2007CB307004);the National High Technology Research and Development Program of China (Grant No 2006AA03A113);the National Natural Science Foundation of China (Grant Nos 60276034,60577030 and 60607003); We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride （GaN） laser diodes （LDs） theoretically. For the particular LD structure, composed of approximate 4 μm t...; 关键词：GaN laser optical mode coupling optical confinement factor

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature被引量：1: 《Chinese Physics Letters》2008年第4期1281-1283,共3页张立群张书明杨辉曹青季莲朱建军刘宗顺赵德刚江德生段俐宏王海史永生刘素英陈良惠梁骏吾; Supported by the National Natural Science Foundation of China under Grant Nos 60506001, 60476021 and 60576003, and the National Basic Research Programme of China under Grant No 2007CB936700.; Room-temperature operation of cw GaN based multi-quantum-well laser diodes （LDs） is demonstrated. The LD structure is grown on a sapphire （0001） substrate by metalorganic chemical vapour deposition. A 2.5μm × 80...; 关键词：supernova explosion proto-neutron star shock wave

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy被引量：1: 《Journal of Semiconductors》2006年第3期482-488,共7页牛智川倪海桥方志丹龚政张石勇吴东海孙征赵欢彭红玲韩勤吴荣汉; 国家自然科学基金;国家高技术发展研究计划;国家重点基础研究发展计划资助项目~~; The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature ...; 关键词：quantum dot INAS laser diode

Monolithically Integrated Laser Diode and Electroabsorption Modulator with Dual-Waveguide Spot-Size Converter Output: 《Journal of Semiconductors》2005年第6期1094-1099,共6页侯廉平王圩冯文朱洪亮周帆王鲁峰边静; 国家自然科学基金(批准号:90101023);国家重点基础研究发展计划(批准号:200006831)资助项目~~; A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The ...; 关键词：laser diode electroabsorption modulator spot-size converter integrated optoelectronics optical coupling

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

LASER_DIODE

检索结果分析

下载全文

高级检索检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

LASER_DIODE

检索结果分析

下载全文

用户登录

高级检索检索式检索